MGV12N120D MOTOROLA | Alldatasheet

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1Motorola IGBT Device Data /C0080/C0114/C0111/C0100/C0117/C0099/C0116 /C0080/C0114/C0101/C0118/C0105/C0101/C0119 /C0068/C0097/C0116/C0097 /C0083/C0104/C0101/C0101/C0116 /C0073/C0110/C0115/C0117/C0108/C0097/C0116/C0101/C0100 /C0071/C0097/C0116/C0101 /C0066/C0105/C0112/C0111/C0108/C0097/C0114 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 /C0119/C0105/C0116/C0104 /C0065/C0110/C0116/C0105/C0045/C0080/C0097/C0114/C0097/C0108/C0108/C0101/C0108 /C0068/C0105/C0111/C0100/C0101 N–Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBTs are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost.

  • High Power Surface Mount D3PAK Package
  • High Speed Eoff: 160 /C0109J/A typical at 125°C
  • High Short Circuit Capability – 10 /C0109s minimum
  • Soft Recovery Free Wheeling Diode is included in the package
  • Robust High Voltage Termination MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 1200 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ ) VCGR 1200 Vdc Gate–Emitter Voltage — Continuous VGE ±20 Vdc Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) IC25 IC90 ICM Adc Apk Total Power Dissipation @ TC = 25°C Derate above 25°C PD 123 0.98 Watts W/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to 150 °C Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω ) tsc 10 /C0109s Thermal Resistance — Junction to Case – IGBT — Junction to Case – Diode — Junction to Ambient R θJC R θJC R θJA 1.02 1.41 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 260 °C (1) Pulse width is limited by maximum junction temperature. This document contains information on a new product. Specifications and information are subject to change without notice. Order this document by MGV12N120D/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0071/C0086/C0049/C0050/C0078/C0049/C0050/C0048/C0068 IGBT & DIODE IN D3PAK

12 A @ 90°C

20 A @ 25°C

1200 VOLTS

CASE 433–01, Style 1 TO–268AA G C EC E G  Motorola, Inc. 1995

/C0077/C0071/C0086/C0049/C0050/C0078/C0049/C0050/C0048/C0068

2 Motorola IGBT Device Data

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) BVCES 1200 870 Vdc mV/°C Zero Gate Voltage Collector Current (VCE = 1200 Vdc, VGE = 0 Vdc) (VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES 100 2500 µAdc Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES — — 250 nAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 5 Adc) (VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 10 Adc) VCE(on) 2.51 2.36 3.21 3.37 4.42 Vdc Gate Threshold Voltage (VCE = VGE , IC = 1 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) 4.0 6.0 8.0 Vdc mV/°C Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc) gfe — 12 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vdc V 0 Vdc C ies — 930 — pF Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) C oes — 126 — Transfer Capacitance f = 1.0 MHz) C res — 16 — SWITCHING CHARACTERISTICS (1) Turn–On Delay Time (VCC = 720 Vdc IC =1 0A d c td(on) — 80 — ns Rise Time (VCC = 720 Vdc, IC = 10 Adc, VGE = 15 Vdc, L = 300 /C0109H tr — 114 — Turn–Off Delay Time GE , /C0109 R G = 20 Ω, TJ = 25°C) Energy losses include“tail” td(off) — 66 — Fall Time Energy losses include “tail” tf — 232 — Turn–Off Switching Loss Eoff — 0.57 1.33 mJ Turn–On Switching Loss Eon — 1.12 1.88 Total Switching Loss Ets — 1.69 3.21 Turn–On Delay Time (VCC = 720 Vdc IC =1 0A d c td(on) — 74 — ns Rise Time (VCC = 720 Vdc, IC = 10 Adc, VGE = 15 Vdc, L = 300 /C0109H tr — 110 — Turn–Off Delay Time GE , /C0109 R G = 20 Ω, TJ = 125°C) Energy losses include“tail” td(off) — 80 — Fall Time Energy losses include “tail” tf — 616 — Turn–Off Switching Loss Eoff — 1.60 — mJ Turn–On Switching Loss Eon — 2.30 — Total Switching Loss Ets — 3.90 — Gate Charge (V 720 Vdc I 10 Adc Q T — 31 — nC (VCC = 720 Vdc, IC = 10 Adc, VGE = 15 Vdc) Q 1 — 13 —VGE = 15 Vdc) Q 2 — 14 —

/C0077/C0071/C0086/C0049/C0050/C0078/C0049/C0050/C0048/C0068 3Motorola IGBT Device Data ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 5 Adc) (IEC = 5 Adc, TJ = 125°C) (IEC = 10 Adc) VFEC 2.75 2.50 3.50 3.22 4.18 Vdc Reverse Recovery Time (I 10 Ad V 720 Vd trr — 54 — ns (IF = 10 Adc, VR = 720 Vdc, ta — 30 —(F , R , dIF/dt = 200 A/µs) tb — 24 — Reverse Recovery Stored Charge Q RR — 61 — µC Reverse Recovery Time (I 10 Ad V 720 Vd trr — 150 — ns (IF = 10 Adc, VR = 720 Vdc, ta — 102 —(F , R , dIF/dt = 200 A/µs, TJ = 125°C) tb — 48 — Reverse Recovery Stored Charge Q RR — 653 — µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

/C0077/C0071/C0086/C0049/C0050/C0078/C0049/C0050/C0048/C0068

4 Motorola IGBT Device Data

A MIN MAX MIN MAX MILLIMETERS 0.588 0.592 14.94 15.04 INCHES B 0.623 0.627 15.82 15.93 C 0.196 0.200 4.98 5.08 D 0.048 0.052 1.22 1.32 E 0.058 0.062 1.47 1.57 F 0.078 0.082 1.98 2.08 G 0.430 BSC 1.092 BSC H 0.105 0.110 2.67 2.79 J 0.018 0.022 0.46 0.56 K 0.150 0.160 3.81 4.06 L 0.058 0.062 1.47 1.57 N 0.353 0.357 8.97 9.07 P 0.078 0.082 1.98 2.08 Q 0.053 0.057 1.35 1.45 R 0.623 0.627 15.82 15.93 S 0.313 0.317 7.95 8.05 U 0.028 0.032 0.71 0.81 W 0.054 0.058 1.37 1.47 X 0.050 0.060 1.27 1.52 Y 0.104 0.108 2.64 2.74 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR CASE 433–01 ISSUE B W Y V P U F K N Q B S D G A 2 PL 2 PL L M0.13 (0.005) T SEATING J H X E C PLANE–T– R How to reach us: USA / EUROPE : Motorola Literature Distribution; JAPAN : Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 INTERNET : http://Design–NET.com 51 Ting Kok R oad, Tai Po, N.T., Hong Kong. 852–26629298 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MGV12N120D/D /C0042/C0077/C0071/C0086/C0049/C0050/C0078/C0049/C0050/C0048/C0068/C0047/C0068/C0042