MGTO1000

MGTO1000 MOTOROLA | Alldatasheet

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MOTOROLA SC (DIODES/OPTO) @5E D MM 6367255 0081183 9 mm TAZ —- IS" Gate Turn-Off Thyristors MGTO1200 The GTO is a family of asymmetric gate turn-off thyristors designed primarily for de power switching applications such as motor drives, switching power supplies, inverters, or wheraver a need exists for high surge current capabilities and fast switching speeds. . atos © Fast Turn-Off With Reverse Gate Pulse 18 AMPERES RMS © High Voltage — VpRxM = 1000 and 1200 Volts 1000 and 1200 VOLTS © Momentary Forward Pulse For Turn-On ¢ Minimizes Drive Losses © Interdigitated Emitter Geometry Aids Turn-On Current Spreading and Improves Turn-On difdt : 4} © Clip and Current Spreading Ring for Reliable High Surge Capability — y | Itsm = 200A Zp ‘ANODE CATHODE ¢ CASE 2214-04 (T0-220AB) GATE ‘STYLES MAXIMUM RATINGS [Rg at ea Repetitive Peak Off-State Voltage VDRXM 1000 Volts {Ty = —40 to +126°C, 1/2 Sine Wave 60 to 60 Hz) Note 1 1200 Repotitive Peak Reverse Voltage, Gate Open VRRM Volts (Tj = ~40 to + 125°C), Note 2 TepottvePask Reverso Gato Voltage, Nowe 3 [Venn [evens | On-State Curent at Tq = 65°C (Vt Cycle Sine Wave, 601060 Fa) [cinews) [18 | ame] Peak Nonrepetitive Surge Current 'tsM (8.3 ms Conduction, Half Sine Wave Tc = 65°C) Repetitive Contollable On-Siat Gurren, Note 4 ee a a Nonrepetive Maximum Interuptable On-State Curcont, Now & [PeskrorvescuPowe | Par | 0] | Para [3 | Watts | Penk ave Gio over Ts “Average Reverse Gato Power Panay [8 | wore | Notes: 1. Vonxm for all types can be applied on a continuous basis without damage. Ratings apply for R = 39 1 or shorted gate conditions or ‘ative voltge on th gate, Devices should not be teste for blocking vltage such thatthe supply voltage exceeds the rting ofthe Jove, 2. This is an asymmetrio anode shorted part with @ blocking gate-cathode junction. The ability to support @ reverse voltage depends on the gatecunoc minal conton,Gateahade vrs eae Vani +9. Instantaneous voltage at turn-off may exceed rated Vaan provided FoRM, is not exceeded. 4. Vp Maximum Peak = Vorxm — 300 V, Ty < 125°C, Lg = 2uH, VaR = 12 V (Seo Figure 2) tg = On uF for MGTOIOSS 6. Vg itoxmur Peek = Voqucy ~ 30 V, Ty < 125g = 2H Von = TZ (Se Figure 2 eam oz ne or MaToIOOS , on NOR oe Cg = 0.1 uF for MGTOI200 MOTOROLA THYRISTOR DEVICE DATA . 3-302

MOTOROLA SC (DIODES/OPTO) SE D M™@ 6347255 0081164 0 mm MGTO1000 e MGTO1200 is T-as-/ ‘THERMAL CHARACTERISTICS Torna Reranee Jondon wo che [rac [1+ | ew Thermal Resistance, Junction to Ambient re ELECTRICAL CHARACTERISTICS (Ty = 26°C unless otherwise noted), Note 1 ee Peak Forward Blocking Current (Vp = Rated VorM, Rak = 389, Ty = 125°C) Peak On-State Voltage Vim (iM = 80 A, Pulse Width < 300 ys, Outy Cycle < 2%, Igr = 300 mAde) Peek Gate Trigger Current 'ot™ (Vp = 12 Vdc, Ry, = 1.4.0, Pulse Width > 10 us) Peak Gate Trigger Voltage Votm Volts (Vp = 12 Vde, RL = 1.4 0, Pulse Width > 10 us) Reverse Gate Leakage Current (arm = 18V, Ty = 126°C) Latching Current ia (PW = 300 ys, f = 60 Hz, Gate Pulse = 1A, 10 us, Vp = 12 Vde) Holding Current 700 mA (PW = 300 ys, f = 60 Hz, Gate Pulse = 1A, 10 ps, Anode Pulse = 6 A, 100 us, Vp = 12 Vdc) SWITCHING CHARACTERISTICS (Ty = 26°C unless otharwise noted) RESISTIVE TURN-ON SWITCHING Gate TurnOn Time _| Vo = 600, tr = 80.8 [ae [= [is [ = J [turn-on Delay Time | (Glnkd 5 a) 58 ~ AF Turon Seay Tine | ‘Gu = 84° a= [es [| ; [Rise ine | Seo gure ond Tbe 1 re a cc 3 INDUCTIVE TURN-OFF SWITCHING Gate Tun-Off Time | Vpipk) = 700V, It = 0A, Var = 12V | to | — | 3 | — | [storage time | 0 |_tai_| Songetine | oH BA ta = ae] Fall Time Sao Figure 2 and Table 1(8) [mm | — | o | — | GATE TURN-OFF CHARGE [_Gatecharge | Voipyy = 700.V, ir = 50A [aca [= | J = [| Peak Reverse Var = 12V [ica | — | 7 | — | Gate Current ig = 2 yH, Cy = 0.1 uF STATIC dvidt Critical Exponent Vipk) = Vorm ~ 400 V dvidt 10,000 Vins of Risa Time RGk = 39.0, Ty ~ 126°C Linear Waveform Note 1. This device Is rated for use in applications subject to high surge conditions. Care must be taken to Insure proper heat-sinking is used at ‘sustained currents (see derating curves). a EET Tae Se ee MOTOROLA THYRISTOR DEVICE DATA 3-303

MOTOROLA SC (DIODES/OPTO) 2@5€ D MM 6367255 0081185 2 mm MGT01000 e MGTO1200 T- as. Is ‘TABLE 1 — TERMS, SYMBOLS AND DEFINITIONS FOR SWITCHING WITH GTO’S: NOTE: The parameters aro shown on two separate graphs for clarity. RESISTIVE TURN-ON SWITCHING 09 Ir. Turn-On Time E Fi ' BY]. orm Delay Time a |_| digg _ 98 Icio) a at IGF) g g ‘ 3 Rise Time ti rf ‘atk Ig Plateau ‘aie ry vet INDUCTIVE TURN-OFF SWITCHING i, + 8 “nr Current Storage Time i os Yah $ ‘at “Cs 3 <———'rP i waol tn time S taq Turn-Off Gate Charge Hi ot > >! pF —> time $ |!ca % 'ca. 2 GR Peak Tail Current rep at lg (e) tej — current storage time 10% Ign to 90% tt {fj — current fll time 90% ty to IL Inflection point taq — ate controlled turn-off time (tei + tg tai — current dolay time. 10% la{pk) to 10% Fr tr] — utrent rise time, 10% ly 10.80% Ip tat — turn-on time (tai + tr? Co Ee a MOTOROLA THYRISTOR DEVICE DATA 3-304

MOTOROLA SC (DIODES/OPTO) 25€ D MM b3b7255 O08118b 4 MGTO1000 e MGTO1200 T= AS-IS FIGURE 1 — RESISTIVE SWITCHING TEST CIRCUIT (TURN-ON) —----— 33, 50 Watt r 7 Pearson Model 411 Non-Indyetive 1 aa | wy 3% { | 760 Non- ! i Inductive y ov GR = 1 | 1 iy = 50 A Peak ? i Ig(pk) = 6.0A — digidt > 7.0 Aus 1 \\ eo | 7° Cg = 0.1 aE Voc = Specified | | coo v Vie = Specied Value ! le | f= 10Hz ' | Adjust Ri, as required \\ ° t for ty peak. 1 1 fl =Vor

1 Fol

| = = Lowe 24 FIGURE 2 — INDUCTIVE SWITCHING TEST CIRCUIT (TURN-OFF) r 1 Pearson Model 411 Non-inductive Vor = 12V ! I iy = 60 A Peak | 1 *Lg = 2.0 wH | = 1 Cg as specified 1 tg | me g 58 wH rion | \\ ‘Adjust Vcc for specified tr \\ { Clamp I ’ I *Lg? 1 Layer Air Core I i 2.3/4" OD 45 Turns No. 14 AWG ! i | | Cs Vec H le | 0-60 | ° | Clamp: MOSORB Transient Suppressor | i} Zener Series Stack, 1N6292 or i | Scope = Tek 7623A 1.8KE75 adjusted for ! =Var | P6007 x 100 Probe specified Vink) | Fo! Loe = ‘These circuits are used to evaluate the GTO maximum ratings and switching characteristics MOSORB is a trademark of Motorola Inc. ES MOTOROLA THYRISTOR DEVICE DATA . 3-305

MOTOROLA SC (DIODES/OPTO) ESE 2 MB 6367255 0041187 b MGTO1000 e MGTO1200 ° Ags FIGURE 3 — 50-60 Hz HALF WAVE CURRENT DERATING FIGURE 4 — 50-60 Hz FULL WAVE CURRENT DERATING a Las Wee TTT REET ET ?ARSE ETO fp DKSROB EPS ERR Foot IAKN OR ee BONS Be ere NW ONT] AAAI = cooler 8s <x 6 Ty = 125°C) PK ONG Te Semodnon SAAN SNe sd car al MS Gad SAN ISIN EET 8 +} zn EAE XE a | tf YTS [wine] ce Vee Seo n hy SL | mA fwams) [fem TT] 8G Te rd 16 ET) 45 60 18 90 105, 2 2° 0 20 60 90 12 16 8 ri) Frys AVERAGE ON-STATE CURRENT (AMPS) AVERAGE ON-STATE CURRENT (AMPS) FIGURE 5 — CURRENT DERATING 50-60 Hz FIGURE 6 — HALF WAVE 50-60 Hz POWER DISSIPATION PR ede 2 re a ee a ASS A i EL AASRAC ee ey gel VRS TAA) ae NN Si ee a Ea PONS He 74 oH ININN ET gl geet SCOUT SN NET] gil ger Pee bei pl Zeer 2501113 ro) eA

0 ET) 60 90 12 18 18 a 4 o 1S 30 45 60 15 90 105, 2

AVERAGE ON-STATE CURRENT (AMPS) AVERAGE ON-STATE CURRENT (AMPS) FIGURE 7 — FULL WAVE 50-60 Hz POWER DISSIPATION RGUAE 8 — FOE ANGULAR Waverona > CURRENT 0 0 ee [fot TT tote TI ss aie A Os | {| [ZA_pi= we | Bs [| Tea ge TT TVeyt tt) egfFt byt st t=s//A7 | | | | | és LT ey ttt go [pA jet *.1§ Alt IA Ww | 1A | T LA TT esto venen ana t} 30 60 90 2 6 18 a 4 0 ET} 6.0 90 12 15 18 a “4 AVERAGE ON-STATE CURRENT (AMPS) AVERAGE ON-STATE CURRENT (AMPS) MOTOROLA THYRISTOR DEVICE DATA 3-306

MOTOROLA SC (DIODES/OPTO) 25E D MM &3bL7255 0041168 6 MGTO1000 ¢ MGTO1200 Teor IS FIGURE 9 — FIRING CHARACTERISTICS FIGURE 10 — NONREPETITIVE SURGE CHARACTERISTICS 1 ey Ne ae eee @ ERR Sr Ee rrarsureeond Pee EEE EE HIE

2 SOE S reheat gS ee CE dg

a a ‘owes 4 Fe) a a OD Seer Seae eo | g SES eee ere 8 LL eer ee A A ee ee 3 3 ft tt CEES FSF EE SH 2 § wis ee Seer treat 1 &

2 Esse rect mess: ae

i Oo 02 ir) 20 10 = 02 05 «0810 30 50 80 10 0 ‘Vg, INSTANTANEOUS GATE VOLTAGE (VOLTS) ‘PW, PULSE WIDTH Iens) FIGURE 11 — MAXIMUM INTERRUPTABLE CURRENT FIGURE 12 — MAXIMUM FORWARD VOLTAGE versus CURRENT == SS SS SS eee | SSS i w= BT Ta P| | Bet eet hig = 20H —Art— eee Ei) ee ee a 7 re ee ee ee ee & -Nca= -12v ——— | 5 of A tig = om 100] Ak SF SE=F SS Ev = 10s SS i eve) = SS this ci a SS 3 pA 4 : == a ee a 19 te a ee | otf tT) 0 20 400 Cy 800 1000 06 10 15 20 25 30 35 40 45 50 65 ‘VoRM: PEAK ANODE TO CATHODE VOLTAGE (VOLTS) ‘Vg, FORWARO VOLTAGE (VOLTS) NOTE: in bidg inverter conigursions the upper and tower soubber es: pastors aa in ua, permiting «ber» when vay dca lagtiow. Unsnubbed operation not recommended athaugh hgh cures at low voltages can be switched, given woll defined load conditions. The use Sheva sneer tenures tht te wort coe vt see i tna FIGURE 13 — TYPICAL GATE TRIGGER CURRENT FIGURE 14 — TYPICAL GATE TRIGGER VOLTAGE m 1.05, v wttT ETT TTT oof YET TP tT tt got KET Py Tt tt geet AT TT ft Tt tt AG yO i yA SG OO eNEEoe wp} WP Pe rt a | APE T TT i oe A KS SG pet SC at TIN TEP bef PPP AE 3° eee ae SS OO 0 ot | [Ty tT tt tT) wl. [ [TT PT Pt TF | = -20 0 ® © & 8 10 120 -© -0 0 20 © © & 10 120 ‘Ty, JUNCTION TEMPERATURE (°C) ‘Ty, JUNCTION TEMPERATURE (°C) MOTOROLA THYRISTOR DEVICE DATA 3-307

MOTOROLA SC (DIODES/OPTO) 2@5E D MM 6367255 0081169 T mm . MGTO1000 e MGTO1200 FIGURE 15 — THERMAL RESPONSE T as- is 10 ere 7 FE 0s SE ( we Ett pg a a i A i Cy a ec

007 SE EE Pave = Reue eR ee

ont | TTT TT Ti TP ni zZ A A SO 8 8H OS onL LETT TT Tr TT) of 02:03 05 10 20 30 60 10 nn 100 20 800 Ok «20k 30k SOK 10k 1, TIME (ms) FIGURE 16 — Trice CATCHING FIGURE 17 — TYPICAL TURN-OFF DYNAMICS 40 nm ob 7800 aot AIT TT Ten ed af» ft TT tT yt to eee ee | ToT RET T_T Bere a «10 ae SS soo i POON Hotel ett | | lag Fe se z We ES Bal (7 ae g A 5 = 01 ph, Voy = BUOY, Ty = 128°C 200 eG ahah tab | (PF 3 ee Ug = 20 Hig = 30,VeR = 2V Ley acbrrt ye eer) * LI [| -@ -% 0 OM © © © 100 120 o 10 a » 0 Ci oO 7m 8 ‘Ty, JUNCTION TEMPERATURE {°C) PEAK ANODE CURRENT [AMPS) FIGURE 18 — TYPICAL TURN-OFF SWITCHING SPEED FIGURE 19 — CONDUCTION ENERGY PER PULSE 4s 800 100 RSS SSH 40 LACS = 01 AF Vox = 800V, Ty = 128°. [ | Ti. pases Saas, See Se ig = 20m =20,¥oR=2V | | |_| ESSE SESS si a5 v0 a SAAS ssi a a INN SU A 20 a . fa oF REN EN al ma rm“ me 380 HTN ini 777770 in Fis | | A | [Ty wo Zao FH NS SIN ii wow t7t | Tt | to Pale altond [<in>l i wt | [| TT tT ti, luce NG Sgn ht 10 a n Cy a Cy nw 0.001 001 On 10 10 PEAK ANODE CURRENT (AMPS) ‘PW, PULSE WIDTH (ms) GS ee , MOTOROLA THYRISTOR DEVICE DATA | 3-308

MOTOROLA SC (DIODES/OPTO) @S5E D MM 6367255 0081190 & mm e MGTO1000 ¢ MGTO1200 Tass FIGURE 21 — MGTO1000, 1000M TURN-OFF ENERGY FIGURE 20 — ENERGY PER PULSE AT TURN-ON (INDUCTIVE LOAD) Ey Ty = 125°C IGFigk] = 6A digpidt = 10Ans Vion = 200V. Ver = VE} " foowworonpiuuu yen LL] flat eo Ee g Fe = iS eee Ht aerone be Ce Aa tt 4 Cot wae Ti g [tes toa 0.20 uF TT) 8 (i Tein Tn TT) ge [I ACA ZAAN | oso TTT SU etl oN CT) 3 ee ee oT LU ace wo | BE ol LL Tomo ERS epee EE Fe oor EEE Fer Er a Ne a 24 soL LOT TTT CTP al TTT TT PT

10 C) 100 3 10 0 10

ENERGY (MILLJOULES) ty. PEAK ANODE CURRENT (AMPS) . FIGURE 22 — MGTO1200, 1200M, TURN-OFF ENERGY FIGURE 23 — MGTO1400, 1400M, TURN-OFF ENERGY (WNDUCTIVE LOAD) (INDUCTIVE LOAD) Pion = SovVer = eV @ [Von = iwovver= ev TT TTT TTT 0 ge aowire= son tT | |_| Liat igs Bo Re = gen TIT aah 8 || Rosy EAA Sol el CLIT FA ee Taos at TH ® See ret Ba Poel" gu Lt eee vet Tg Cao Oo ESS see eeeH Bio ee ho A <A 4, ae a a oe a 30 10 50 10 3 10 ‘100 {, PEAK ANODE CURRENT (AMPS) ty, PEAK ANODE CURRENT (AMPS) MOTOROLA THYRISTOR DEVICE DATA 3-309