MGSF1P02 WEITRON | Alldatasheet
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http://www.weitron.com.tw MGSF1P02 Rating Symbol Value Unit VDSS VGS ID IDM PD R JA ±20 750 2000 400 300 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 (t <10us) C V V mA mA mW C/W Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Pulsed Drain Current(1) Power Dissipation (TA=25 C) Thermal Resistance Junction-to-Ambient Maximum Ratings (TA=25 C Unless Otherwise Specified) Device Marking MGSF1P02=PC Note 1: Pulse Width Limited by Maximum Junction Temperature Power MOSFET P-Channel GATE SOURCE DRAIN SOT-23 3Features: *Low On-Resistance : 0.35W *Low Input Capacitance: 130 PF *Low Out put Capacitance : 120 PF *Low Threshole : 1.7V(TYE) *Fast Switching Speed : 2.5ns p q
http://www.weitron.com.tw MGSF1P02 Note: Input Capacitance VDS=5.0V Output Capacitance VDS=5.0V Transfer Capacitance(See FIG.6) VDG=5.0V Drain-Source Breakdown Voltage VGS=0V, ID=10 uA Gate-Threshold Voltage VDS=V , ID=250 uA Gate-body Leakage Current VGS= Static Drain-to-Source On-Resistance VGS=10V, ID=1.5A VGS=4.5V, ID=0.75A Static Dynamic Characteristics Switching Characteristics Source-Drain Diode Characteristics Characteristic Symbol UnitMin Typ Max V(BR)DSS VGS (th) rDS (on) IGSS IDSS Ciss Coss Crss td(on) tr tf td(off ) 20 - - V 1.0 1.7 2.4 V - - - 1.0 100 nA uA 0.235 0.375 0.350 0.500 130 120 PF 1.0 2.5 Q 8.0 6000 nS pC Electrical Characteristics (TA=25 C Unless otherwise noted) Zero Gate Voltage Drain Current VDS=20V, VGS=0V VDS=20V, VGS=0V, Tj=125 C - - - - Continuous Current Pulsed Current Forward Voltage I - 1.5 +_ 20V, V =0VDS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (V =15V, I =1.0A, R =5 , )0W DD D L T (2) S VSD ISM 0.6 0.75 1. Pulse Test: Pulse Width 300us, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. <_<_ GS A V Ohms (2)
http://www.weitron.com.tw 0.75 0.25 1.5 0.5 FIG.1 Transfer Characteristics 1 1.5 2 2.5 3 I D, DRAIN CURRENT (AMPS) VGS , GATE-T O-SOURCE VOLTAGE (VOLTS) FIG.2 On-Region Characteristics VDS = 10 V TJ = 150 C 25 C -5 5 C 02 4 10 0.75 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) 0.25 1.5 0.5 3.5 1.25 1.25 13 957 3.25 V 2.75 V 2.25 V 2.5 V 3.0 V VGS = 3.5 V RDS(on) , DRAIN-TO-SOURCE RESIST ANCE (OHMS) FIG.3 On-Resistance versus Drain Current 0 0.2 0.4 0.6 0.8 0.35 0.5 0.55 FIG.4 On-Resistance versus Drain Current ID , DRAIN CURRENT (AMPS) 25 C VGS = 4.5 V 0.45 0.4 RDS(on) , DRAIN-TO-SOURCE RESIST ANCE (OHMS) 0 0.4 0.8 1.2 1.6 0.2 0.32 0.36 ID , DRAIN CURRENT (AMPS) VGS = 10 V 0.28 0.24 0.1 0.3 0.5 0.7 150 C -55 C 0.4 0.3 0.34 0.26 0.22 0.38 0.2 0.6 1 1.4 150 C 25 C -55 C RDS(on) , DRAIN-TO-SOURCE RESIST ANCE (NORMALIZED) FIG.5 On-Resistance Variation with Temperature 0.8 TJ , JUNCTION TEMPERATURE ( C) FIG.6 Gate Charge VGS = 10 V ID = 1.5 A -55 -5 45 95 145 0.85 0.9 0.95 VGS , GATE-T O-SOURCE VOLTAGE (VOLTS) QT , TOTAL GATE CHARGE (pC) 1000 6000 VDS = 16 V TJ = 25 C 2000 ID = 1.5 A 3000 1.05 1.25 1.1 1.15 1.2 VGS = 4.5 V ID = .75 A 50004000
http://www.weitron.com.tw 0.001 0.1 VSD , DIODE FORWARD VOLTAGE (VOLTS) FIG.7 Body Diode Forward Voltage ID , DIODE CURRENT (AMPS) TJ = 150 C 0 0.2 0.4 0.6 1.8 0.01 -55 C25 C 0.8 FIG.8 Capacitance VDS, DRAIN-TO-SOURCE VOLTAGE (Volts) C , CAPACITANCE (pF) 04 8 1026 Ciss Coss Crss 1000 100 VGS = 0 V f = 1 MHz TJ = 25 C 1 1.2 1.4 1.6
A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 A B DE G M L H J T OP V IE W K C WEITRON http://www.weitron.com.tw