MGS-70008 HP | Alldatasheet
Document overview
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Technical content
Features
- Single-Pole, Double-Throw Output
- Broad Bandwidth: DC to 3␣ GHz
- Low Insertion Loss: 0.8␣ dB␣ Typical at 1␣ GHz
- Fast Switching Time: 3␣ ns␣ Typical
- Ultra Low DC Power Consumption
- Small Surface-Mount Plastic Package MGS-70008
Description
The MGS-70008 is a single-pole, double-throw monolithic GaAs MMIC switch. The J2 and J3 of the MGS-70008 are terminated to ground when “off” (an absorptive version, the MGS-71008, which terminates the “off” port in an internal 50␣Ω resistor, is also available). The switches are AC Equivalent Circuit/Pinout Ground Control 1 Control 2 Ground Ground sealed in a small, plastic, surface- mount SO-8 package. Switching is actuated by a -5 V control voltage per the truth table shown on the next page. -3.3␣ V operation is also possible with some reduction in P 1 dB and IP3. The MGS-70008 is designed for high volume commercial applica- tions where low insertion loss, high isolation, and fast switching speed are required. Its low cost and high performance make it suitable for a wide variety of uses such as digital cellular, spread spectrum, GPS, and other RF switching applications. Refer to applications note AN-G007 for more application details. The die is fabricated using HP’s nominal 0.7␣µm Schottky-barrier- gate, gold metallization, and silicon nitride passivation to achieve excellent performance, uniformity, and reliability. 5965-9116E
Symbol Parameter Units Maximum[1] Maximum Input Power below 500 MHz dBm + 2 7 above 500 MHz dBm + 3 0 Control Voltage V -8.0 TSTG Storage Temperature °C -65 to 150 Note: 1. Operation of this device above any one of these limits may cause permanent damage. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions [1] Units Min. Typ. Max. IC Control Input Current DC µA 12 110 BW Bandwidth GHz DC-3 IL Insertion Loss 200 MHz dB 0.6 1000 MHz dB 0.8 1.1 2000 MHz dB 1.0 2500 MHz dB 1.1 3000 MHz dB 1.2 ISO Isolation 200 MHz dB 51
1000 MHz dB 29 33
2000 MHz dB 23
2500 MHz dB 19
3000 MHz dB 16
VSWR Voltage Standing Wave Ratio (on port) DC- 1000 MHz — 1.2:1 1.4:1 J1, J2 or J3 1000- 3000 MHz — 1.3:1 VSWR Voltage Standing Wave Ratio (off port) DC- 2000 MHz — ≥ 10:1 J2 or J3 2000-3000 MHz — ≥ 10:1 ISW Switching Speed 10% to 90% ns 3 P1 dB[2] Output @ 1 dB Gain Compression 200 MHz dBm 18.5 1000 MHz dBm 26.0 2000 MHz dBm 26.0 IP3[2] 3rd Order Intercept 200 MHz dBm 41
1000 MHz dBm 45
2000 MHz dBm 45
Notes: 1. Measured in a 50 Ω system at 1 GHz, unless otherwise specified, VC = -5 V. 2. Measured in a 50 Ω system with VC = -7 V.
0 V 0 V 16 dB 16 dB 1 dB 1 dB 1 dB
Figure 2. Isolation vs. Frequency. Figure 1. Insertion Loss vs. Frequency. Figure 3. Input and Output Return Loss vs. Frequency. VControl = -7 V. Figure 4. Output Power vs. Frequency.
Typical Scattering Parameters, ON Switch Port, ZO = 50 Ω , TA =2 5°C, VC = -5 V Freq. S 11 S21 S12 S22 Typical Scattering Parameters, OFF Switch Port, ZO = 50 Ω , TA =2 5°C, VC = -5 V Freq. S 11 S21 S12 S22
5.84/6.20 (.230/.244) 3.80/4.00 (.1497/.1574) Pin 1 1.27 (.050) 4.72/5.00 (.186/.197) 0.10/0.25 (.004/.0098) 0.33/0.51 (.013/.020) 8X 1.35/1.75 (.0532/.0688) 0.19/0.25 (.0075/.0098) 0.41/1.27 (.016/.050) 0°/8° 0.38 – 0.10 0.10 (.004) Note: 1. Dimensions are shown in millimeters (inches).