MGP20N35CL MOTOROLA | Alldatasheet

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1Motorola TMOS Power MOSFET Transistor Device Data /C0065/C0100/C0118/C0097/C0110/C0099/C0101/C0100 /C0073/C0110/C0102/C0111/C0114/C0109/C0097/C0116/C0105/C0111/C0110 /C0083/C0077/C0065/C0082/C0084/C0068/C0073/C0083/C0067/C0082/C0069/C0084/C0069/C0083 /C0073/C0110/C0116/C0101/C0114/C0110/C0097/C0108/C0108/C0121 /C0067/C0108/C0097/C0109/C0112/C0101/C0100/C0044 /C0078/C0045/C0067/C0104/C0097/C0110/C0110/C0101/C0108 /C0073/C0071/C0066/C0084 This Logic Level Insulated G ate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from S MARTDISCRETES  m onolithic circuitry for usage as an Ignition Coil Driver.

  • Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load
  • Integrated ESD Diode Protection
  • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
  • Low Saturation Voltage
  • High Pulsed Current Capability MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES CLAMPED Vdc Collector–Gate Voltage VCGR CLAMPED Vdc Gate–Emitter Voltage VGE CLAMPED Vdc Collector Current — Continuous @ TC = 25°C IC 20 Adc Reversed Collector Current – pulse width /C0116 100 /C0109s ICR 12 Apk Total Power Dissipation @ TC = 25°C (TO–220) PD 150 Watts Electrostatic Voltage — Gate–Emitter ESD 3.5 kV Operating and Storage T emperature Range TJ, Tstg –55 to 175 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case – (TO–220) Thermal Resistance — Junction to Ambient R /C0113JC R /C0113JA 1.0 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 275 °C Mounting T orque, 6–32 or M3 screw 10 lbf/C0015in (1.13 N/C0015m) UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS Single Pulse Collector–Emitter Avalanche Energy @ Starting TJ = 25°C @ Starting TJ = 150°C EAS 550 150 mJ SMAR TDISCRETES and TMOS are trademarks of Motorola, Inc. This document contains information on a new product. Specifications and information herein are subject to change without notice. Order this document by MGP20N35CL/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0071/C0080/C0050/C0048/C0078/C0051/C0053/C0067/C0076

20 AMPERES

N–CHANNEL IGBT Vce(on) = 1.8 VOLTS

350 VOLTS (CLAMPED)

CASE 221A–06, Style 9 TO–220AB G C E C G E Rge  Motorola, Inc. 1995

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2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (IClamp = 10 mA, TJ = –40 to 150°C) BVCES 320 350 380 Vdc Zero Gate Voltage Collector Current (VCE = 250 V, VGE = 0 V, TJ = 125°C) (VCE = 15 V, VGE = 0 V, TJ = 125°C) ICES 1.0 200 mA /C0109A Resistance Gate–Emitter (TJ = –40 to 150°C) R GE 10k 16k 30k /C0087 Gate–Emitter Breakdown Voltage (IG = 2 mA) BVGES 11 13 15 /C0034V Collector–Emitter Reverse Leakage (VCE = –15 V, TJ = –40 to 150°C) ICES — 8 100 mA Collector–Emitter Reversed Breakdown Voltage (IE = 75 mA) BVCER 26 40 120 V ON CHARACTERISTICS (1) Gate Threshold Voltage (VCE = VGE , IC = 1 mA) (VCE = VGE , IC = 1 mA, TJ = 150°C) VGE(th) 1.0 0.75 1.7 2.4 1.8 V Collector–Emitter On–Voltage (VGE = 5 V, IC = 5 A) (VGE = 5 V, IC = 10 A) (VGE = 5 V, IC = 10 Adc, TJ = 150°C) VCE(on) 1.1 1.4 1.4 1.4 1.9 1.8 V Forward Transconductance (VCE /C0117 50 V, IC = 10 A) gfs 10 16 — S DYNAMIC CHARACTERISTICS Input Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) C iss — 2800 — pF Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) C oss — 200 — Transfer Capacitance f = 1.0 MHz) C rss — 25 — SWITCHING CHARACTERISTICS (1) Total Gate Charge (VCC = 280 V, IC = 20 A, VGE = 5 V) Q g — 45 80 nC Gate–Emitter Charge (VCC = 280 V, IC = 20 A, VGE = 5 V) Q gs — 8.0 — Gate–Collector Charge VGE = 5 V) Q gd — 20 — Turn–Off Delay Time (VCC = 320 V, IC = 20 A, L = 200 /C0109H, RG = 1 K/C0087) td(off) — TBD TBD µs Fall Time (VCC = 320 V, IC = 20 A, L = 200 /C0109H, RG = 1 K/C0087) tf — TBD TBD Turn–On Delay Time (VCC = 14 V, IC = 20 A, L = 200 /C0109H, RG = 1 K/C0087) td(on) — TBD TBD µs Rise Time (VCC = 14 V, IC = 20 A, L = 200 /C0109H, RG = 1 K/C0087) tr — TBD TBD (1) Pulse Test: Pulse Width ≤/n636861720000000000000000300 µs, Duty Cycle ≤ 2%.

4 Motorola TMOS Power MOSFET Transistor Device Data

Figure 7. Gate–to–Emitter and Figure 8. Total Switching Losses Figure 9. Total Switching Losses Figure 10. Total Switching Losses Figure 11. Total Switching Losses Figure 12. Latch Current versus Temperature

Figure 13. Thermal Response

  1. DIMENSIONING AND TOLERANCING PER ANSI
  2. CONTROLLING DIMENSION: INCH.
  3. DIMENSION Z DEFINES A ZONE WHERE ALL

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6 Motorola TMOS Power MOSFET Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.; T atsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P .O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 3–14–2 T atsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 INTERNET : http://Design–NET .com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MGP20N35CL/D /C0042/C0077/C0071/C0080/C0050/C0048/C0078/C0051/C0053/C0067/C0076/C0047/C0068/C0042