MGP20N14CL ONSEMI | Alldatasheet

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1Motorola TMOS Power MOSFET Transistor Device Data /C0080/C0114/C0111/C0100/C0117/C0099/C0116 /C0080/C0114/C0101/C0118/C0105/C0101/C0119 /C0083/C0077/C0065/C0082/C0084/C0068/C0073/C0083/C0067/C0082/C0069/C0084/C0069/C0083 /C0073/C0110/C0116/C0101/C0114/C0110/C0097/C0108/C0108/C0121 /C0067/C0108/C0097/C0109/C0112/C0101/C0100/C0044 /C0078/C0045/C0067/C0104/C0097/C0110/C0110/C0101/C0108 /C0073/C0071/C0066/C0084 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES  monolithic circuitry for usage as an Ignition Coil Driver.

  • Temperature Compensated Gate–Collector Clamp Limits Stress Applied to Load
  • Integrated ESD Diode Protection
  • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
  • Low Saturation Voltage
  • High Pulsed Current Capability MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES CLAMPED Vdc Collector–Gate Voltage VCGR CLAMPED Vdc Gate–Emitter Voltage VGE CLAMPED Vdc Collector Current — Continuous Collector Current — Single Pulsed (tp = /C003410 /C0109s) IC ICM Adc Apk Total Power Dissipation (TO–220) Derate Above 25°C PD 150 1.0 Watts W/°C Operating and Storage Temperature Range TJ, Tstg –55 to 175 °C Single Pulse Collector–Emitter Avalanche Energy @ Starting TJ = 25°C (VCC = 80 V, VGE = 5 V, Peak IL = 10 A, L = 10 mH) EAS 500 mJ THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case – (TO–220) Thermal Resistance — Junction to Ambient R /C0113JC R /C0113JA 1.0 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 260 °C Mounting Torque, 6–32 or M3 screw 10 lbf/C0015in (1.13 N/C0015m) SMARTDISCRETES is a trademark of Motorola, Inc. This document contains information on a new product. Specifications and information herein are subject to change without notice. REV 2 Order this document by MGP20N14CL/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0071/C0080/C0050/C0048/C0078/C0049/C0052/C0067/C0076

20 AMPERES

N–CHANNEL IGBT VCE(on) = 1.9 VOLTS

135 VOLTS (CLAMPED)

CASE 221A–09 STYLE 9 TO–220AB G C E C G E  Motorola, Inc. 1997

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2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Clamp Voltage (IClamp = 10 mA, TJ = –40 to 150°C) V(BR)CES 135 Vdc Zero Gate Voltage Collector Current (VCE = 100 V, VGE = 0 V) (VCE = 100 V, VGE = 0 V, TJ = 150°C) ICES 100 /C0109A Gate–Emitter Clamp Voltage (IG = 1 mA) V(BR)GES 10 Vdc Gate–Emitter Leakage Current (VGE = /C00345 V, VCE = 0 V) IGES — — 1.0 /C0109A ON CHARACTERISTICS (1) Gate Threshold Voltage (VCE = VGE , IC = 1 mA) Threshold Temperature Coefficient (Negative) VGE(th) 1.0 1.5 4.4 2.0 V mV/°C Collector–Emitter On–Voltage (VGE = 5 V, IC = 10 A) (VGE = 5 V, IC = 10 Adc, TJ = 175°C) VCE(on) 1.9 1.8 V Forward Transconductance (VCE /C0117 15 V, IC = 10 A) gfe 8.0 15 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vdc V 0 Vdc C ies — 430 600 pF Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) C oes — 182 250 Transfer Capacitance f = 1.0 MHz) C res — 48 100 SWITCHING CHARACTERISTICS (1) Turn–On Delay Time (V 68 V I 20 A td(on) — TBD TBD ns Rise Time (VCC = 68 V, IC = 20 A, tr — TBD TBD Turn–Off Delay Time ( CC , C , VGE = 5 V, RG = 9.1 /C0087) td(off) — TBD TBD Fall Time tf — TBD TBD Total Gate Charge (V 108 V I 20 A Q T — 14 20 nC Gate–Emitter Charge (VCC = 108 V, IC = 20 A, VGE = 5 V) Q ge — 3.0 — Gate–Collector Charge VGE = 5 V) Q gc — 6.0 — (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

/C0077/C0071/C0080/C0050/C0048/C0078/C0049/C0052/C0067/C0076 3Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS CASE 221A–09 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 Q H Z L V G N A K 12 3 D SEATING PLANE–T– C ST U R J STYLE 9: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR

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4 Motorola TMOS Power MOSFET Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488 Customer Focus Center: 1–800–521–6274 Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE : http://motorola.com/sps/ MGP20N14CL/D◊