MGP19N35CL

MGP19N35CL ONSEMI | Alldatasheet

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© Semiconductor Components Industries, LLC, 2005 February, 2005 − Rev. XXX Publication Order Number: MGP19N35CL/D MGP19N35CL, MGB19N35CL Preferred Device Ignition IGBT

19 Amps, 350 Volts

N−Channel TO−220 and D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

• Ideal for IGBT−On−Coil or Distributorless Ignition System

Applications

• High Pulsed Current Capability up to 50 A
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices
• Low Saturation Voltage
• Optional Gate Resistor (RG) MAXIMUM RATINGS (−55°C ≤ TJ ≤ 175°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCES 380 VDC Collector−Gate Voltage VCER 380 VDC Gate−Emitter Voltage VGE VDC Collector Current − Continuous @ TC = 25°C − Pulsed IC ADC AAC ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD 8.0 kV ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V Total Power Dissipation @ TC = 25°C Derate above 25°C PD 165 1.1 Watts W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 175 UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55°C ≤ TJ ≤ 175°C) Characteristic Symbol Value Unit Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 22.4 A, L = 2.0 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 17.4 A, L = 2.0 mH, Starting TJ = 150°C EAS 500 300 mJ Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, L = 3.0 mH, Pk IL = 25.8 A, Starting TJ = 25C EAS(R) 1000 mJ Gate Emitter Collector Collector Gate Emitter Collector Collector TO−220AB CASE 221A STYLE 9 MARKING DIAGRAMS & PIN ASSIGNMENTS G19N35CL = Device Code Y = Year WW = Work Week G19N35CL YWW G19N35CL YWW D2PAK CASE 418B STYLE 4 Device Package Shipping

ORDERING INFORMATION

TO−220

50 Units/Rail

800 Tape & Reel

C E G

19 AMPERES

350 VOLTS (Clamped)

VCE(on) @ 10 A = 1.8 V Max http://onsemi.com N−Channel Preferred devices are recommended choices for future use and best overall value. RGE

MGP19N35CL, MGB19N35CL http://onsemi.com THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case RθJC 0.9 °C/W Thermal Resistance, Junction to Ambient TO−220 RθJA 62.5 D2PAK (Note 1.) RθJA Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 275

ELECTRICAL CHARACTERISTICS

Collector−Emitter Clamp Voltage BVCES IC = 2.0 mA TJ = −40°C to 150°C 320 350 380 VDC IC = 10 mA TJ = −40°C to 150°C 330 360 380 Zero Gate Voltage Collector Current ICES V 300 V TJ = 25°C 1.5 µADC g CES VCE = 300 V, VGE = 0 V TJ = 150°C 40* µ DC VGE = 0 V TJ = −40°C 0.7 1.5 Reverse Collector−Emitter Leakage Current IECS V 24 V TJ = 25°C 0.35 1.0 mA g ECS VCE = −24 V TJ = 150°C 20* TJ = −40°C 0.05 0.5 Reverse Collector−Emitter Clamp Voltage BVCES(R) I 75 A TJ = 25°C VDC p g VCES(R) IC = −75 mA TJ = 150°C DC TJ = −40°C Gate−Emitter Clamp Voltage BVGES IG = 5.0 mA TJ = −40°C to 150°C VDC Gate−Emitter Leakage Current IGES VGE = 10 V TJ = −40°C to 150°C 384 500 1000 µADC Gate Resistor (Optional) RG TJ = −40°C to 150°C Ω Gate Emitter Resistor RGE TJ = −40°C to 150°C kΩ ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage VGE(th) I 1 0 A TJ = 25°C 1.4 1.7 2.0 VDC g GE(th) IC = 1.0 mA, VGE = VCE TJ = 150°C 0.75 1.1 1.4 DC VGE = VCE TJ = −40°C 1.6 1.9 2.1* Threshold Temperature Coefficient (Negative) 4.4 mV/°C 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width 300 µS, Duty Cycle 2%. *Maximum Value of Characteristic across Temperature Range.

MGP19N35CL, MGB19N35CL http://onsemi.com ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit ON CHARACTERISTICS (continued) (Note 3.) Collector−to−Emitter On−Voltage VCE(on) I 6 0 A TJ = 25°C 1.0 1.25 1.6 VDC g CE(on) IC = 6.0 A, VGE = 4.0 V TJ = 150°C 0.8 1.05 1.4 DC VGE = 4.0 V TJ = −40°C 1.15 1.4 1.75* I 10 A TJ = 25°C 1.2 1.5 1.8 IC = 10 A, VGE = 4.0 V TJ = 150°C 1.0 1.3 1.6 VGE = 4.0 V TJ = −40°C 1.3 1.6 1.9* I 15 A TJ = 25°C 1.5 1.75 2.1 IC = 15 A, VGE = 4.0 V TJ = 150°C 1.35 1.65 1.95 VGE = 4.0 V TJ = −40°C 1.5 1.8 2.1* I 20 A TJ = 25°C 1.7 2.0 2.3 IC = 20 A, VGE = 4.0 V TJ = 150°C 1.6 1.9 2.2 VGE = 4.0 V TJ = −40°C 1.7 2.0 2.3* I 25 A TJ = 25°C 2.0 2.25 2.6 IC = 25 A, VGE = 4.0 V TJ = 150°C 2.0 2.3 2.7* VGE = 4.0 V TJ = −40°C 2.0 2.2 2.6 Collector−to−Emitter On−Voltage VCE(on) IC = 10 A, VGE = 4.5 V TJ = 150°C 1.3 1.8 VDC Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A TJ = −40°C to 150°C 8.0 Mhos DYNAMIC CHARACTERISTICS Input Capacitance CISS V

25 V V

T 40°C t 1500 1800 pF Output Capacitance COSS VCC = 25 V, VGE = 0 V f = 1.0 MHz TJ = −40°C to 150°C 130 160 p Transfer Capacitance CRSS f = 1.0 MHz 150 C 6.0 8.0 SWITCHING CHARACTERISTICS (Note 3.) Turn−Off Delay Time (Inductive) td(off) VCC = 300 V, IC = 10 A R 1 0 kΩ L 300 H TJ = 25°C 5.0 µSec y d(off) CC C RG = 1.0 kΩ, L = 300 µH TJ = 150°C 6.0 µ Fall Time (Inductive) tf VCC = 300 V, IC = 10 A R 1 0 kΩ L 300 H TJ = 25°C 6.0 f CC C RG = 1.0 kΩ, L = 300 µH TJ = 150°C 15* Turn−Off Delay Time (Resistive) td(off) VCC = 300 V, IC = 6.5 A R 1 0 kΩ R 46 Ω TJ = 25°C 6.0 µSec y d(off) CC C RG = 1.0 kΩ, RL = 46 Ω TJ = 150°C 7.0 µ Fall Time (Resistive) tf VCC = 300 V, IC = 6.5 A R 1 0 kΩ R 46 Ω TJ = 25°C f CC C RG = 1.0 kΩ, RL = 46 Ω TJ = 150°C 22* Turn−On Delay Time td(on) VCC = 10 V, IC = 6.5 A R 1 0 kΩ R 1 5 Ω TJ = 25°C 1.5 2.0 µSec y d(on) CC C RG = 1.0 kΩ, RL = 1.5 Ω TJ = 150°C 1.5 2.0 µ Rise Time tr VCC = 10 V, IC = 6.5 A R 1 0 kΩ R 1 5 Ω TJ = 25°C 4.0 6.0 r CC C RG = 1.0 kΩ, RL = 1.5 Ω TJ = 150°C 5.0 6.0 3. Pulse Test: Pulse Width 300 µS, Duty Cycle 2%. *Maximum Value of Characteristic across Temperature Range.

MGP19N35CL, MGB19N35CL http://onsemi.com PACKAGE DIMENSIONS STYLE 9: PIN 1. GATE COLLECTOR EMITTER COLLECTOR TO−220 THREE−LEAD TO−220AB CASE 221A−09 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERS INCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04 B Q H Z L V G N A K F 2 3 D SEATING PLANE −T− C S T U R J

MGP19N35CL, MGB19N35CL http://onsemi.com PACKAGE DIMENSIONS STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR D2PAK CASE 418B−03 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE S G D −T− M 0.13 (0.005) T 3 PL K J H V E C A DIM MIN MAX MIN MAX MILLIMETERS INCHES A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 G

0.100 BSC

2.54 BSC

H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 −B− M B

MGP19N35CL, MGB19N35CL http://onsemi.com Notes

MGP19N35CL, MGB19N35CL http://onsemi.com Notes

MGP19N35CL, MGB19N35CL http://onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION CENTRAL/SOUTH AMERICA: Spanish Phone: 303−308−7143 (Mon−Fri 8:00am to 5:00pm MST) Email: ONlit−spanish@hibbertco.com Toll−Free from Mexico: Dial 01−800−288−2872 for Access − then Dial 866−297−9322 ASIA/PACIFIC: LDC for ON Semiconductor − Asia Support Phone: 303−675−2121 (Tue−Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001−800−4422−3781 Email: ONlit−asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4−32−1 Nishi−Gotanda, Shinagawa−ku, Tokyo, Japan 141−0031 Phone: 81−3−5740−2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. MGP19N35CL/D NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303−675−2167 or 800−344−3810 Toll Free USA/Canada N. American Technical Support: 800−282−9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor − European Support German Phone: (+1) 303−308−7140 (Mon−Fri 2:30pm to 7:00pm CET) Email: ONlit−german@hibbertco.com French Phone: (+1) 303−308−7141 (Mon−Fri 2:00pm to 7:00pm CET) Email: ONlit−french@hibbertco.com English Phone: (+1) 303−308−7142 (Mon−Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL−FREE ACCESS*: 00−800−4422−3781 *Available from Germany, France, Italy, UK, Ireland