MGP15N35CL ONSEMI | Alldatasheet

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 Semiconductor Components Industries, LLC, 2000 April, 2000 – Rev. 0

1 Publication Order Number:

/C0077/C0071/C0080/C0049/C0053/C0078/C0051/C0053/C0067/C0076/C0044 /C0077/C0071/C0066/C0049/C0053/C0078/C0051/C0053/C0067/C0076/C0044 /C0077/C0071/C0067/C0049/C0053/C0078/C0051/C0053/C0067/C0076 /C0073/C0110/C0116/C0101/C0114/C0110/C0097/C0108/C0108/C0121 /C0067/C0108/C0097/C0109/C0112/C0101/C0100 /C0078/C0045/C0067/C0104/C0097/C0110/C0110/C0101/C0108 /C0073/C0071/C0066/C0084 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–V oltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

  • Gate–Emitter ESD Protection
  • Temperature Compensated Gate–Collector V oltage Clamp Limits Stress Applied to Load
  • Integrated ESD Diode Protection
  • Low Threshold V oltage to Interface Power Loads to Logic or Microprocessor Devices
  • Low Saturation V oltage
  • High Pulsed Current Capability
  • Optional Gate Resistor (RG ) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 380 VDC Collector–Gate Voltage VCER 380 VDC Gate–Emitter Voltage VGE 22 VDC Collector Current–Continuous @ T C = 25°C IC 15 ADC Total Power Dissipation @ T C = 25°C Derate above 25°C PD 136 1.0 Watts W/°C Operating and Storage Temperature Range TJ, Tstg –55 to 175 N–CHANNEL IGBT

15 A, 350 V

VCE(on) = 1.8 V MAX http://onsemi.com TO–220 CASE 221A STYLE 9 MARKING DIAGRAMS G C E D 2PAK CASE 418B STYLE 3 Device Package Shipping

ORDERING INFORMATION

MGP15N35CL TO–220 50 Units/Rail MGC15N35CL Die Options Not Applicable MGB15N35CLT4 D2PAK 800 Tape & Reel C E G R GE R G GB15N35CL ALYYWW ALYYWW GP15N35CL A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week

MGP15N35CL, MGB15N35CL, MGC15N35CL http://onsemi.com UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (T J /C0116150°C) Characteristic Symbol Value Unit Single Pulse Collector–to–Emitter Avalanche Energy VCC = 50 V, VGE = 5 V, Pk IL = 14.2 A, L = 3 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5 V, Pk IL = 10 A, L = 3 mH, Starting TJ = 150°C EAS 300 150 mJ THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R θJC 1.0 °C/W Thermal Resistance, Junction to Ambient TO–220 R θJA 62.5 D 2PAK R θJA 50 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 275 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Clamp Voltage BV CES IC = 2 mA TJ = –40°C to 175°C 320 350 380 VDC Zero Gate Voltage Collector Current ICES VCE = 300 V, VGE = 0, TJ = 25°C – – 40 µADC VCE = 300 V, VGE = 0, TJ = 150°C – – 200 Reverse Collector–Emitter Leakage Current IECS VCE = –24 V – – 1.0 mA Gate–Emitter Clamp Voltage BV GES IG = 5 mA 17 – 22 VDC Gate–Emitter Leakage Current IGES VGE = 10 V 384 – 1000 µADC Gate Resistor (Optional) R G – – 70 – Ω Gate Emitter Resistor R GE – 10 – 26 kΩ ON CHARACTERISTICS* Gate Threshold Voltage VGE(th) IC = 1 mA VGE = VCE 1.0 1.8 2.1 VDC Threshold Temperature Coefficient (Negative) – – – 4.4 – mV/°C Collector–to–Emitter On–Voltage VCE(on) IC = 6 A, VGE = 4 V – – 1.8 VDC Collector–to–Emitter On–Voltage VCE(on) IC = 10 A, VGE = 4.5 V, TJ = 150°C – – 1.8 VDC Forward Transconductance gfs VCE = 5 V, IC = 6 A 8.0 15 – Mhos DYNAMIC CHARACTERISTICS Input Capacitance C ISS VCC = 15 V – 1000 – pF Output Capacitance C OSS VGE = 0 V – 130 – Transfer Capacitance C RSS f = 1 MHz – 5.0 – *Pulse Test: Pulse Width /C0118 300 µS, Duty Cycle /C0118 2%.

MGP15N35CL, MGB15N35CL, MGC15N35CL http://onsemi.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Test Conditions Min Typ Max Unit SWITCHING CHARACTERISTICS* Turn–Off Delay Time td(off) VCC = 300 V, IC = 10 A – 13 – µSec Fall Time tf R G = 1 kΩ , L = 300 µH – 6.0 – Turn–On Delay Time td(on) VCC = 10 V, IC = 6.5 A – 1.0 – µSec Rise Time tr R G = 1 kΩ , R L = 1 Ω – 5.0 – Gate Charge Q T VCC = 300 V – TBD – nC Q 1 IC = 15 A – TBD – Q 2 VGE = 5 V – TBD – *Pulse Test: Pulse Width /C0118 300 µS, Duty Cycle /C0118 2%.

1.5 IC = 10 A

Figure 1. Output Characteristics Figure 2. Output Characteristics Figure 3. Transfer Characteristics Figure 4. Collector–to–Emitter Saturation Voltage Figure 5. Capacitance Variation Figure 6. Threshold Voltage versus Temperature

MGP15N35CL, MGB15N35CL, MGC15N35CL http://onsemi.com PACKAGE DIMENSIONS TO–220 CASE 221A–09 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE–T– C ST U R J STYLE 9: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR D2PAK CASE 418B–03 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE S G D –T– M0.13 (0.005) T 231 3 PL K J H V E C A DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 –B– MB STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE

MGP15N35CL, MGB15N35CL, MGC15N35CL http://onsemi.com Notes

MGP15N35CL, MGB15N35CL, MGC15N35CL http://onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone : 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–asia@hibbertco.com JAPAN : ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–8549 Phone : 81–3–5740–2745 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. MGP15N35CL/D NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone : (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time) Email: ONlit–german@hibbertco.com French Phone : (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time) Email: ONlit–french@hibbertco.com English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time) Email: ONlit@hibbertco.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, England, Ireland TMOS is a trademark of Semiconductor Components Industries, LLC.