MGP15N35CL_06 ONSEMI | Alldatasheet

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© Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 5

1 Publication Order Number:

MGP15N35CL, MGB15N35CL Preferred Device Ignition IGBT

15 Amps, 350 Volts

N−Channel TO−220 and D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over −V oltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

  • Ideal for Coil−On−Plug, IGBT−On−Coil, or Distributorless Ignition System Applications
  • High Pulsed Current Capability up to 50 A
  • Gate−Emitter ESD Protection
  • Temperature Compensated Gate−Collector V oltage Clamp Limits Stress Applied to Load
  • Integrated ESD Diode Protection
  • Low Threshold V oltage to Interface Power Loads to Logic or Microprocessor Devices
  • Low Saturation V oltage
  • Optional Gate Resistor (RG) MAXIMUM RATINGS (−55°C ≤ TJ ≤ 175°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCES 380 VDC Collector−Gate Voltage VCER 380 VDC Gate−Emitter Voltage VGE 22 VDC Collector Current−Continuous @ TC = 25°C − Pulsed IC 15 ADC AAC ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD 8.0 kV ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V Total Power Dissipation @ TC = 25°C Derate above 25°C PD 150 1.0 Watts W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 175 UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55°C ≤ TJ ≤ 175°C) Characteristic Symbol Value Unit Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 17.4 A, L = 2.0 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.2 A, L = 2.0 mH, Starting TJ = 150°C EAS 300 200 mJ Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, L = 3.0 mH, Pk IL = 25.8 A, Starting TJ = 25°C EAS(R) 1000 mJ Gate Emitter Collector Collector Gate Emitter Collector Collector TO−220AB CASE 221A STYLE 91 MARKING DIAGRAMS & PIN ASSIGNMENTS G15N35CL = Device Code Y = Year WW = Work Week G15N35CL YWW G15N35CL YWW 1 2 D2PAK CASE 418B STYLE 4 Device Package Shipping

ORDERING INFORMATION

MGP15N35CL TO −220 50 Units/Rail MGB15N35CLT4 D2PAK 800 Tape & Reel

15 AMPERES

350 VOLTS (Clamped)

VCE(on) @ 10 A = 1.8 V Max http://onsemi.com N−Channel Preferred devices are recommended choices for future use and best overall value. C E G RGE RG

MGP15N35CL, MGB15N35CL http://onsemi.com THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case RθJC 1.0 °C/W Thermal Resistance, Junction to Ambient TO −220 RθJA 62.5 D2PAK (Note 1) RθJA 50 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL 275 °C

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Clamp Voltage BVCES IC = 2.0 mA TJ = −40°C to 150°C 320 350 380 VDC IC = 10 mA TJ = −40°C to 150°C 330 360 380 Zero Gate Voltage Collector Current ICES VCE = 300 V, VGE = 0 V TJ = 25°C − 1.5 20 μADC TJ = 150°C − 10 40* Reverse Collector−Emitter Leakage Current IECS VCE = −24 V TJ = 25°C − 0.35 1.0 mA TJ = 150°C − 8.0 15* Reverse Collector−Emitter Clamp Voltage BVCES(R) IC = −75 mA TJ = 25°C 25 33 50 VDC TJ = 150°C 25 36 50 TJ = −40°C 25 30 50 Gate−Emitter Clamp Voltage BVGES IG = 5.0 mA TJ = −40°C to 150°C 17 20 22 VDC Gate−Emitter Leakage Current IGES VGE = 10 V TJ = −40°C to 150°C 384 600 1000 μADC Gate Resistor (Optional) RG − TJ = −40°C to 150°C − 70 − Ω Gate Emitter Resistor RGE − TJ = −40°C to 150°C 10 16 26 kΩ ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE TJ = 25°C 1.4 1.7 2.0 VDC TJ = 150°C 0.75 1.1 1.4 Threshold Temperature Coefficient (Negative) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width /C0118 300 μS, Duty Cycle /C0118 2%. *Maximum Value of Characteristic across Temperature Range.

MGP15N35CL, MGB15N35CL http://onsemi.com ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit ON CHARACTERISTICS (continued) (Note 3) Collector−to−Emitter On−Voltage VCE(on) IC = 6.0 A, VGE = 4.0 V TJ = 25°C 1.0 1.3 1.6 VDC TJ = 150°C 0.9 1.2 1.5 IC = 10 A, VGE = 4.0 V TJ = 25°C 1.3 1.6 1.9 TJ = 150°C 1.2 1.5 1.8 IC = 15 A, VGE = 4.0 V TJ = 25°C 1.6 1.95 2.25 IC = 20 A, VGE = 4.0 V TJ = 25°C 1.9 2.2 2.5 TJ = −40°C 1.85 2.15 2.45 IC = 25 A, VGE = 4.0 V TJ = 25°C 2.1 2.5 2.9 Collector−to−Emitter On−Voltage VCE(on) IC = 10 A, VGE = 4.5 V TJ = 150°C − 1.5 1.8 VDC Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A TJ = −40°C to 150°C 8.0 15 25 Mhos DYNAMIC CHARACTERISTICS Input Capacitance CISS VCC = 25 V, VGE = 0 V f = 1.0 MHz TJ = −40°C to 150°C − 1000 1300 pF Output Capacitance COSS − 100 130 Transfer Capacitance CRSS − 5.0 8.0 SWITCHING CHARACTERISTICS (Note 3) Turn−Off Delay Time (Inductive) td(off) VCC = 300 V, IC = 6.5 A RG = 1.0 kΩ, L = 300 μH TJ = 25°C − 4.0 10 μSec TJ = 150°C − 4.5 10 Fall Time (Inductive) tf VCC = 300 V, IC = 6.5 A RG = 1.0 kΩ, L = 300 μH TJ = 25°C − 7.0 10 TJ = 150°C − 10 15* Turn−Off Delay Time (Resistive) td(off) VCC = 300 V, IC = 6.5 A RG = 1.0 kΩ, RL = 46 Ω, TJ = 25°C − 4.0 10 μSec TJ = 150°C − 4.5 10 Fall Time (Resistive) tf VCC = 300 V, IC = 6.5 A RG = 1.0 kΩ, RL = 46 Ω, TJ = 25°C − 13 20 TJ = 150°C − 16 20 Turn−On Delay Time td(on) VCC = 10 V, IC = 6.5 A RG = 1.0 kΩ, RL = 1.5 Ω TJ = 25°C − 1.0 1.5 μSec TJ = 150°C − 1.0 1.5 Rise Time tr VCC = 10 V, IC = 6.5 A RG = 1.0 kΩ, RL = 1.5 Ω TJ = 150°C − 5.0 6.0 3. Pulse Test: Pulse Width /C0118 300 μS, Duty Cycle /C0118 2%. *Maximum Value of Characteristic across Temperature Range.

MGP15N35CL, MGB15N35CL http://onsemi.com PACKAGE DIMENSIONS STYLE 9: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR TO−220 THREE−LEAD TO−220AB CASE 221A−09 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 B Q H Z L V G N A K F 12 3 D SEATING PLANE−T− C ST U R J

MGP15N35CL, MGB15N35CL http://onsemi.com PACKAGE DIMENSIONS STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR D2PAK CASE 418B−03 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE S G D −T− M0.13 (0.005) T 231 3 PL K J H V E C A DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 −B− MB ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 MGP15N35CL/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative