MGA71543 HP | Alldatasheet
Document overview
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- PDF pages: 25
Technical content
Features
- Operating frequency: 0.1 GHz ~ 6.0 GHz
- Noise figure: 0.8 dB (NFmin)
- Gain: 16 dB
- Average Idd = 2mA in CDMA handset
- Bypass switch on chip Loss = -5.6 dB (Id < 5 mA) IIP3 = +35 dBm
- Adjustable input IP3: 0 to +9 dBm
- 2.7 V to 4.2 V operation
Applications
- CDMA (IS-95, J-STD-008) Receiver LNA
- Transmit Driver Amp
- W-CDMA Receiver LNA
- TDMA (IS-136) handsets Surface Mount Package SOT-343/4-lead SC70 Pin Connections and Package Marking The MGA-71543 offers an inte- grated solution of LNA with adjustable IIP3. The IIP3 can be fixed to a desired current level for the receiver’s linearity require- ments. The LNA has a bypass switch function, which provides low insertion loss at zero current. The bypass mode also boosts dynamic range when high level signal is being received. The MGA-71543 is designed for CDMA and W-CDMA receiver systems. The IP3, Gain, and mitigative network are tailored to these applications where filters are used. Many CDMA systems operate 20% LNA mode, 80% bypass. With the bypass current draw of zero and LNA of 10 mA, the MGA-71543 allows an average 2 mA current. The MGA-71543 is a GaAs MMIC, processed on Agilent’s cost effective PHEMT (Pseudomorphic High Electron Mobility Transistor Technology). It is housed in the SOT343 (SC70 4-lead) package. 71x RF Gnd & Vs INPUT & Vref OUTPUT & V d RF Gnd & Vs 1.+ 2001.04.26, 10:42 AMPage 1 "EPCF1BHF.BLFS+11$
Tc = +25°C, Zo = 50W , Id = 10 mA, Vd = 3V, unless noted Symbol Parameter and Test Condition Units Min. Typ. Max. s [1] IIP3 test f = 2.01 GHz V d = 3.0 V (= Vds - Vref) I d = 10 mA dBm 1 4.3 0.96 Gain, Bypass f = 2.01 GHz Vds = 0 V , Vref = -3V I d = 0 mA dB -6.4 -5.6 0.12 Bypass Mode[6] Ig test Bypass Mode Vds = 0 V , Vref = -3 V [6] Id = 0 mA mA 2.0 1.5 NFmin[3] Minimum Noise Figure f = 0.9 GHz dB 0.7 As measured in Figure 5 Test Circuit f = 1.5 GHz 0.7 (Gopt computed from s-parameter and f = 1.9 GHz 0.8 noise parameter performance as measured f = 2.1 GHz 0.8 in a 50W impedance fixture) f = 2.5 GHz 0.8 f = 6.0 GHz 1.1 Gass[3] Associated Gain at Nfo f = 0.9 GHz dB 17.1 As measured in Figure 5 Test Circuit f = 1.5 GHz 16.4 (Gopt computed from s-parameter and f = 1.9 GHz 15.8 noise parameter performance as measured f = 2.1 GHz 15.4 in a 50W impedance fixture) f = 2.5 GHz 14.9 f = 6.0 GHz 10.0 P1dB Output Power at 1 dB Gain Compression I d = 0 mA dBm +10 As measured in Evaluation Test Circuit with I d = 3 mA -5.1 source resistor biasing[4,5] Id = 6 mA +3.0 Frequency = 2.01 GHz I d = 10 mA +7.4 Id = 20 mA +13.1 Id = 40 mA +15.5 IIP3 Input Third Order Intercept Point I d = 0 mA dBm +35 As measured in Figure 4 Test Circuit[5] Id = 3 mA -2.6 Frequencies = 2.01 GHz, 2.02 GHz I d = 6 mA +1.6 Id = 10 mA +4.3 Id = 20 mA +7.4 Id = 40 mA +8.7 Switch Bypass Switch Rise/Fall Time (10% - 90%) Intrinsic 10 As measured in Evaluation Test Circuit Eval Circuit nS 100 RLin Input Return Loss as measured in Fig. 4 f = 2.01 GHz dB 6.0 0.31 RLout Output Return Loss as measured in Fig. 4 f = 2.01 GHz dB 10.9 0.65 ISOL Isolation |s12| 2 as measured in Fig. 5 f = 2.01 GHz dB -22.5 Notes: 1. Standard Deviation and Typical Data based at least 450 part sample size from 9 wafers. Future wafers allocated to this produc t may have nominal values anywhere within the upper and lower spec limits. 2. Measurements made on a fixed tuned production test circuit (Figure 4) that represents a trade-off between optimal noise match , maximum gain match, and a realizable match based on production test board requirements at 10 mA bias current. Excess circuit losses have been de-embedded from actual measurements. Vd=Vds-Vref where Vds is adjusted to maintain a constant Vd bias equivalent to a single supply 3V bias application. Consult Applications Note for circuit biasing options. 3. Minimum Noise Figure and Associated Gain data computed from s-parameter and noise parameter data measured in a 50 W system using ATN NP5 test system. Data based on 10 typical parts from 9 wafers. Associated Gain is the gain when the product input is matched for minimum Noise Figure. 4. P1dB measurements were performed in the evaluation circuit with source resistance biasing. As P1dB is approached, the drain c urrent is maintained near the quiescent value by the feedback effect of the source resistor in the evaluation circuit. Consult Applications Note for circuit biasing options. 5. Measurements made on a fixed tuned production test circuit that represents a trade-off between optimal noise match, maximum g ain match, and a realizable match based on production test board requirements at 10 mA bias current. Performance may be optimized for different bias conditions and applications. Consult Applications Note. 6. The Bypass Mode test conditions are required only for the production test circuit (Figure 4) using the gate bias method. In t he preferred source resistor bias configuration, the Bypass Mode is engaged by presenting a DC open circuit instead of the bias resistor on Pin 4. 1.+ 2001.04.26, 10:42 AMPage 3 "EPCF1BHF.BLFS+11$
and was optimized for each frequency with external tuners. Figure 4. MGA-71543 Production Test Circuit. Figure 5. MGA-71543 Test Circuit for S, Noise, and Power Parameters over Frequency. Figure 6. Minimum Noise Figure vs. Figure 7. Associated Gain with Fmin vs. Figure 8. Input Third Order Intercept Point vs. Figure 9. Associated Gain with Fmin vs. Figure 10. Input Third Order Intercept Point Figure 11. S11 Impedance vs. Frequency. Figure 12. S22 Impedance vs. Frequency. Figure 13. Bypass Mode Associated Figure 14. Output Power at 1 dB Compression
500 MHz to 6 GHz
MGA-71543 Typical Scattering Parameters TC = 25°C, Vds = 0V, Vref = -3.0V, Id = 0 mA (bypass mode), ZO = 50W Freq S 11 S11 S21 S21 S12 S12 S22 S22 S21 Gmax RLin RLout Isolation 1.+ 2001.04.26, 10:43 AMPage 6 "EPCF1BHF.BLFS+11$
MGA-71543 Typical Scattering Parameters and Noise Parameters TC = 25°C, Vds = 2.25 V, Vref = -0.77 V, Id = 3 mA, ZO = 50W Freq S 11 S11 S21 S21 S12 S12 S22 S22 S21 Gmax RLin RLout Isolation Freq Fmin GAMMA OPT Rn/50 Gass (GHz) (dB) Mag Ang (dB) 2 1 0.62 47.6 0.4 13.6 5 1.21 0.49 120 0.14 9.6 1.+ 2001.04.26, 10:43 AMPage 7 "EPCF1BHF.BLFS+11$
MGA-71543 Typical Scattering Parameters and Noise Parameters TC = 25°C, Vds = 2.3 V, Vref = -0.7 V, Id = 6 mA, ZO = 50W Freq S 11 S11 S21 S21 S12 S12 S22 S22 S21 Gmax RLin RLout Isolation Freq Fmin GAMMA OPT Rn/50 Gass (GHz) (dB) Mag Ang (dB) 1.+ 2001.04.26, 10:43 AMPage 8 "EPCF1BHF.BLFS+11$
MGA-71543 Typical Scattering Parameters and Noise Parameters TC = 25°C, Vds = 2.4 V, Vref = -0.6 V, Id = 10 mA, ZO = 50W Freq S 11 S11 S21 S21 S12 S12 S22 S22 S21 Gmax RLin RLout Isolation Freq Fmin GAMMA OPT Rn/50 Gass (GHz) (dB) Mag Ang (dB) 6 1.05 0.34 155 0.07 10 1.+ 2001.04.26, 10:43 AMPage 9 "EPCF1BHF.BLFS+11$
MGA-71543 Typical Scattering Parameters and Noise Parameters TC = 25°C, Vds = 2.5 V, Vref = -0.5 V, Id = 20 mA, ZO = 50W Freq S 11 S11 S21 S21 S12 S12 S22 S22 S21 Gmax RLin RLout Isolation Freq Fmin GAMMA OPT Rn/50 Gass (GHz) (dB) Mag Ang (dB) 1.+ 2001.04.26, 10:43 AMPage 10 "EPCF1BHF.BLFS+11$
MGA-71543 Typical Scattering Parameters and Noise Parameters TC = 25°C, Vds = 2.7 V, Vref = -0.3 V, Id = 40 mA, ZO = 50W Freq S 11 S11 S21 S21 S12 S12 S22 S22 S21 Gmax RLin RLout Isolation Freq Fmin GAMMA OPT Rn/50 Gass (GHz) (dB) Mag Ang (dB) 2.4 0.91 0.52 61 0.25 16 3 0.98 0.49 74.7 0.22 15 5 1.19 0.37 136 0.1 11.9 1.+ 2001.04.26, 10:44 AMPage 11 "EPCF1BHF.BLFS+11$
E D A A1b TYP e 1.30 (0.051) BSC 1.15 (.045) BSC q h C TYPL DIMENSIONS ARE IN MILLIMETERS (INCHES) DIMENSIONS MIN. 0.80 (0.031) 0 (0) 0.25 (0.010) 0.10 (0.004) 1.90 (0.075) 2.00 (0.079) 0.55 (0.022) 0.450 TYP (0.018) 1.15 (0.045) 0.10 (0.004) MAX. 1.00 (0.039) 0.10 (0.004) 0.35 (0.014) 0.20 (0.008) 2.10 (0.083) 2.20 (0.087) 0.65 (0.025) 1.35 (0.053) 0.35 (0.014) SYMBOL A b C D E e h L q 1.15 (.045) REF 1.30 (.051) REF 1.30 (.051) 2.60 (.102) Package Dimensions Outline 43 SOT-343 (SC70 4-lead)
Ordering Information
Part Number No. of Devices Container MGA-71543-TR1 3000 7” Reel MGA-71543-TR2 10000 13”Reel MGA-71543-BLK 100 antistatic bag 1.+ 2001.04.26, 10:44 AMPage 12 "EPCF1BHF.BLFS+11$
P F W C D 1 D E A 0 8° MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 5° MAX. B 0 K 0 DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B 0 K 0 P D 1 2.24 – 0.10 2.34 – 0.10 1.22 – 0.10 4.00 – 0.10 1.00 + 0.25 0.088 – 0.004 0.092 – 0.004 0.048 – 0.004 0.157 – 0.004 0.039 + 0.010 CAVITY DIAMETER PITCH POSITION D P E 1.55 – 0.05 4.00 – 0.10 1.75 – 0.10 0.061 – 0.002 0.157 – 0.004 0.069 – 0.004 PERFORATION WIDTH THICKNESS W 8.00 – 0.30 0.255 – 0.013 0.315 – 0.012 0.010 – 0.0005 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F 3.50 – 0.05 2.00 – 0.05 0.138 – 0.002 0.079 – 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.4 – 0.10 0.062 – 0.001 0.205 – 0.004 0.0025 – 0.00004 COVER TAPE Device Orientation Tape Dimensions For Outline 4T 1.+ 2001.04.26, 10:44 AMPage 13 "EPCF1BHF.BLFS+11$
Figure 1. MGA-71543 Functional Diagram. Agilent Technologies’ MGA-71543.
1900 MHz application currently
tions by bypassing the amplifier. Figure 2. Simplified Schematic. Figure 3. Bypass State Duplicates the In and high level signal is being received. 20% LNA and 80% bypass mode. SOT343 (SC70 4-lead) package. depletion mode discrete GaAsFET.
cient presented to the input pin. return loss nor the best gain. that is obtained when Gs = GOPT . cient presented to the input pin. coefficient for optimum NF match. noise figure associated to it. used at the input of the device. series-L-shunt-L topology is used. quency, out of band, instability. resonance of the bias circuit. Figure 15. Normal Distribution Curve.
71 DUT [1] DUT[1] MGA-71543 SOT-343 (4 lead SC-70 package)
Table 1. Component Values for 1900 MHz and 800 MHz.
Table 2. Component Values for 1900 MHz Amplifier on Smaller Board.
- Application note RLM020199, “Designing with the
MGA-72543 RFIC Amplifier/Bypass Switch”.
more discrete current values. Figure 26. LNA Bypass Circuit Control on Small Test Board. Copyright © 2000 Agilent Technologies, Inc.
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