MGA52543 HP | Alldatasheet
Document overview
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Technical content
Features
- Lead-free Option Available
- Operating frequency: 0.4 GHz ~
6.0 GHz
- Minimum noise figure: 1.61 dB at
1.9 GHz
- Associated gain : 15 dB at 1.9 GHz
- 1.9 GHz performance tuned for VSWR < 2:1 Noise figure: 1.9 dB Gain: 14 dB P 1dB: +17.5 dBm Input IP3: +17.5 dBm
- Single supply 5.0 V operation
Applications
- Cellular/PCS base station radio card LNA
- High dynamic range amplifier for base stations, WLL, WLAN, and other applications Surface Mount Package SOT-343/4-lead SC70 Pin Connections and Package Marking Simplified Schematic typically draws 53 mA. This alignment results in an Input Intercept Point of 17.5 dBm. The MGA-52543 is a GaAs MMIC, fabricated using Agilent Technologies’ cost-effective, reliable PHEMT (Pseudomorphic High Electron Mobility Transistor) process. It is housed in the SOT-343 (SC70 4-lead) package. This package offers miniature size (1.2 mm by 2.0 mm), thermal dissipation, and RF characteristics. GND INPUT OUTPUT & Vd GND 3.3 nH 2.2 nH 18 pF Vd 5V 22 nH MGA-52543 360 pF Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control.
- Operation of this device in excess of any of
these limits may cause permanent damage.
0.9 GHz 15
0.9 GHz +18
0.9 GHz 22
0.9 GHz -25
- Measurements obtained from a fixed narrow band tuning described in Figure 1. This circuit designed to optimize Noise Figure a nd IIP3 while
maintaining VSWR better than 2:1.
- Minimum Noise Figure and Associated Gain at F min computed from S-parameter and Noise Parameter data measured in an automated NF system.
- Standard deviation data are based on at least 400 part sample size and 11 wafer lots.
Figure 1. Block Diagram of Test Fixture. See Figure 7 in the Applications section for an equivalent schematic of 1.9 GHz circuit; Figure 11 in the Applications section f or 900 MHz circuit.
All data are measured at Tc = 25°C, Vd = 5V , and in the following test system unless stated otherwise. Figure 2. Test Circuit for S, Noise, and Power Parameters over Frequency.
- Minimum Noise Figure and Associated Gain at F min computed from S-parameter and Noise Parameter data measured in an automated NF system.
- Tuners on input and output were set for narrow band tuning designed to optimize NF and OIP3 while keeping VSWRs better than 2 :1. See Figure 9
for corresponding return losses at each frequency band. Figure 3. Minimum Noise Figure vs.
5.5 V FREQUENCY (GHz)
Figure 4. Minimum Noise Figure vs. Frequency and Temperature[1]. Figure 5. Associated Gain vs. Frequency Figure 6. Associated Gain vs. Frequency Figure 7. Output Third Order Intercept Point vs. Frequency and Voltage[2]. Figure 8. Output Third Order Intercept Point vs. Frequency and Temperature[2].
All data are measured at Tc = 25°C, Vd = 5V, and in the following test system unless stated otherwise. designed to optimize NF and OIP3 while keeping VSWRs better than 2:1. See Figure 9 for corresponding return losses at each frequency band. Figure 9. Return Losses at each Narrow Figure 10. Noise Figure vs. Frequency and Figure 11. Noise Figure vs. Frequency and Figure 12. Output Power at 1 dB Compression Figure 13. Gain vs. Frequency and Figure 14. Gain vs. Frequency and Figure 15. Output Power at 1dB Compression Figure 16. Input Third Order Intercept Point Figure 17. Input Third Order Intercept Point
MGA-52543 Typical Scattering Parameters TC = 25°C, Vd = 5.0V, Id = 53 mA, ZO = 50 Ω, (from S and Noise Parameters in ICM test fixture) Freq s 11 (m) s 11 (a) s 21 (dB) s 21 (m) s 21 (a) s 12 (dB) s 12 (m) s 12 (a) s 22 (m) s 22 (a) K Freq F min Γopt Γopt Rn/Zo Ga (GHz) (dB) Mag Ang (dB) 5 1.94 0.24 -169.13 0.14 12 Noise Parameters
D A1b E 1.30 (.051) BSC 1.15 (.045) BSC CL A DIMENSIONS (mm) MIN. 1.15 1.85 1.80 0.80 0.80 0.00 0.25 0.55 0.10 0.10 MAX. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 0.70 0.20 0.46 SYMBOL E D HE A b c L NOTES: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to EIAJ SC70. 5. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. Package surface to be mirror finish. Package Dimensions Outline 43 SOT-343 (SC70 4-lead) Part Number Ordering Information No. of Part Number Devices Container MGA-52543-TR1 3000 7" Reel MGA-52543-TR2 10000 13" Reel MGA-52543-BLK 100 antistatic bag MGA-52543-TR1G 3000 7" Reel MGA-52543-TR2G 10000 13" Reel MGA-52543-BLKG 100 antistatic bag Note: For lead-free option, the part number will have the character “G” at the end.
P F W C D E 10° MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 10° MAX. DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A P 2.40 ± 0.10 2.40 ± 0.10 1.20 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.094 ± 0.004 0.094 ± 0.004 0.047 ± 0.004 0.157 ± 0.004 0.039 + 0.010 CAVITY DIAMETER PITCH POSITION D P E 1.55 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.061 + 0.002 0.157 ± 0.004 0.069 ± 0.004 PERFORATION WIDTH THICKNESS W 8.00 + 0.30 - 0.10 0.254 ± 0.02 0.315 + 0.012 0.0100 ± 0.0008 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F P 3.50 ± 0.05 2.00 ± 0.05 0.138 ± 0.002 0.079 ± 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.40 ± 0.10 0.062 ± 0.001 0.205 + 0.004 0.0025 ± 0.0004 COVER TAPE Device Orientation T ape Dimensions For Outline 4T
Description
The MGA-52543 is a low noise, linear RFIC amplifier GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor) designed for receiver applications in the 300 MHz to 6.0 GHz frequency range. The device combines low noise performance with high linearity to make it a desirable choice for receiver front end stages as well as driver applications. The MGA-52543 operates from a +5 volt power supply and draws a nominal current of 55 mA. The RFIC is contained in a miniature SOT-343 (SC-70 4-lead) package to minimize printed circuit board space. This package also offers excellent thermal dissipation and RF characteristics. The device is focused at cellular/PCS basestation applications. The high frequency response of the MGA-52543 extends through
6 GHz making it an excellent
choice for use in 5 GHz RLL as well as 2.4 and 5.7 GHz spread spectrum and ISM/license-free band applications. Internal, on-chip capacitors limit the low end frequency response to applications above approximately 300 MHz. Application Guidelines The MGA-52543 is very easy to use. For most applications, all that is required to operate the MGA- 52543 is to apply +5 volts to the RF output pin, and match the RF input and output. RF Input To achieve lowest noise figure performance, the input of the MGA-52543 should be matched from the system impedance (typically 50Ω) to the optimum source impedance for minimum noise, Γ opt. Since the real part of the input of the device impedance is near 50Ω and the reactive part is capacitive, a simple series inductor at the input is often all that is needed to provide a suitable noise match for many applications. RF Output The RF Output port is closely matched to 50Ω, a simple series inductor at the output will help to improve the input match, gain and power response of the device. DC Bias DC bias is applied to the MGA- 52543 through the RF Output connection. Figure 1 shows how an inductor (RFC) is used to isolate the RF signal from the DC supply. The bias line is capaci- tively bypassed to keep RF from the DC supply lines and prevent resonant dips or peaks in the response of the amplifier. The DC schematic for an MGA- 52543 amplifier circuit is shown in Figure 1. RFC +5V Figure 1. Schematic Diagram with Bias 52543 typically pulls 53 mA at 5V. mance is obtained at 5V supply. Figure 2. Gain, Noise Figure and Output Power supply voltage from 3V to 5V.
Figure 3. Recommended PCB Pad Layout for Agilent’s SC70 4L/SOT-343 Products.
- The layout is shown with a
Figure 4. RF Layout. the package terminals as practical. thickness is 0.020 to 0.031 inches. Figure 5. Multi-purpose PCB Layout.
1.9 GHz Design
MGA-52543 is approximately 5 dB.
1900 MHz for example, the
return loss to greater than 10 dB. no additional matching is needed.
Figure 7. Schematic of 1.9 GHz Circuit. biasing is shown in Figure 7. at the lowest operating frequency. assembled is shown in Figure 8. Table 1. Component Parts List for the MGA-52543 Amplifier at 1900 MHz.
1900 MHz Amplifier
output return loss of 21.9 dB. Figure 9. Gain and Noise Figure Results. Figure 10. Input and Output Return Loss Figure 8. Complete 1.9 GHz Amplifier Circuit.
900 MHz Design
frequencies for more information. Figure 11. Schematic of 900 MHz Circuit. MGA-52543 Amplifier at 900 MHz. Figure 12. Gain and Noise Figure Results. Figure 13. Input and Output Return Loss output return loss of 21.9 dB. Various Operating Frequencies. account for these circuit variables.
An effective way of lowering production costs is to replace lumped elements with microstrip components. The inductors for the input and output match maybe printed elements as well as lumped elements. To save board space the use of lumped elements at lower frequencies is recom- mended. The effects of leaving the MGA-52543 unmatched can have a negative effect on the perfor- mance of the device. Gain and OIP3 performance are greatly reduced by using the device unmatched. Table 4 gives typical performance at 1900 MHz for the MGA-52543 in an unmatched configuration using the evaluation board shown in Figure 5. T est Unmatched Matched Results Results Gain 12.5 dB 14.3 dB OIP3 30.0 dBm 31.8 dBm IIP3 17.5 dBm 17.5 dBm P1dB 17.0 dBm 17.5 dBm Input RL 5.1 dB 10.2 dB Out RL 10.2 dB 21.9 dB T able 4. Results of Matching Circuits on MGA-52543. Hints and Troubleshooting
- Oscillation Unconditional stability of the MGA-52543 is dependent on having very good grounding. Inadequate device grounding or poor PCB layout techniques could cause the device to be potentially unstable. Even though a design may be unconditionally stable (K > 1 and B1 > 0) over its full frequency range, other possibilities exist that may cause an amplifier circuit to oscillate. One thing to check for, is feedback in bias circuits. It is important to capacitively bypass the connections to active bias circuits to ensure stable operation. In multistage circuits, feedback through bias lines can also lead to oscillation. Components of insufficient quality for the frequency range of the amplifier can sometimes lead to instability. Also, component values that are chosen to be much higher in value than is appropriate for the application can present a problem. In both of these cases, the compo- nents may have reactive parasitics that make their impedances very different than expected. Chip capacitors may have excessive inductance, or chip inductors can exhibit resonances at unexpected frequencies. For example it is a good idea not to use the same type/value of inductors for L1 and L2. It can be shown that if the self- resonant frequency of the induc- tors used on the input and the output of the MGA-52543 are the same, then the device can be left unterminated at high frequencies.
- A Note on Supply Line Bypassing Multiple bypass capacitors are normally used throughout the power distribution within a wireless system. Consideration should be given to potential resonances formed by the combi- nation of these capacitors and the inductance of the DC distribution lines. The addition of a small value resistor in the bias supply line between bypass capacitors will often de-Q the bias circuit and eliminate resonance effects. Statistical Parameters Several categories of parameters appear within this data sheet. Parameters may be described with values that are either “minimum or maximum,” “typical,” or “standard deviations.” The values for parameters are based on comprehensive product characterization data, in which automated measurements are made on of a minimum of 400 parts taken from three non- consecutive process lots of semiconductor wafers. The data derived from product character- ization tends to be normally distributed, e.g., fits the standard bell curve. Parameters considered to be the most important to system perfor- mance are bounded by minimum or maximum values. For the MGA-52543, these parameters are: Input IP3 (IIP3 test), Gain (Gtest), Noise Figure (NFtest), and Device Current (Id). Each of the guaran- teed parameters is 100% tested as part of the manufacturing process. Values for most of the parameters in the table of Electrical Specifica- tions that are described by typical data are the mathematical mean (µ), of the normal distribution taken from the characterization data. For parameters where measurements or mathematical averaging may not be practical, such as S-parameters or Noise Parameters and the performance curves, the data represents a nominal part taken from the center of the characterization distribution. Typical values are intended to be used as a basis for electrical design. To assist designers in optimizing not only the immediate amplifier circuit using the MGA-52543, but to also evaluate and optimize trade-offs that affect a complete wireless system, the standard deviation (µ) is provided for many of the Electrical Specifications parameters (at 25°C) in addition to the mean. The standard devia- tion is a measure of the variability about the mean. It will be recalled that a normal distribution is completely described by the mean and standard deviation.
www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright © 2004 Agilent Technologies, Inc. Obsoletes 5968-9671EN November 22, 2004 5989-1806EN