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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 16

Technical content

Features

 Low noise figure  High gain  High linearity performance  Excellent isolation  GaAs E-pHEMT Technology  Low-cost small package size: 4.0 mm × 4.0 mm × 0.85 mm  Excellent uniformity in product specifications  Meets MSL1, lead-free and halogen free Specifications

2.5 GHz; Q1: 5 V, 53 mA (typ) Q2: 5 V, 116 mA (typ)

 0.76 dB noise figure  34.3 dB gain  50.3 dB RFout Q1 to RFin Q2 isolation  41.8 dBm output IP3  23.5 dBm output power at 1dB gain compression

Applications

 Low noise amplifier for cellular infrastructure, including GSM, CDMA, TD-LTE, and W-CDMA.  Other very low noise applications. MGA-13316 High Gain, High Linearity Low Noise Amplifier Data Sheet

  • 3 - MGA-13316 Data Sheet Electrical Specifications, Electrical Specifications1, 2 RF performance at Vdd1 = 5 V, Vdd2 = 5 V, 2.5 GHz, TA = 25°C, measured on the demo board. Table 1 Absolute Maximum Rating,a TA = 25°C a. Operation of this device in excess of any of these limits may cause permanent damage. Symbol Parameter Units Absolute Maximum Vdd1 Device Voltage V 5.5 Vdd2 Device Voltage V 5.5 Idd1 Q1 Drain Current mA 90 Pd Power Dissipationb b. This is limited by maximum Vd and Id. Board temperature (T c) is 25°C. For Tc >103°C, derate the device power at 25 mW per °C rise in board temperature adjacent to package bottom. W1 . 1 9 Pin,max CW RF Input Power dBm 20 Tj,max Junction Temperature °C 150 Tstg Storage Temperature °C –65 to 150 Table 2 Thermal Resistancea a. Thermal resistance measured usin g Infra-Red Microscopy Technique. (Vdd1 = 5.0 V, Idd1 = 53 mA, Vdd2 = 5.0 V, Idd2 = 116 mA), jc = 39.59°C/W 1. Measurements obtained using demo board described in Figure 9 with component list in Table 4. Input and Output trace loss is not de-embedded from the measurement. 2. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See Table 1 and refer to the application note for more details. Table 3 Symbol Parameter and Test Condition Units Min. Typ. Max. Idd1 Current at Q1 mA 40 53 68 Idd2 Current at Q2 mA 101 124 143 NF Noise Figure dB — 0.76 1.1 Gain Gain dB 33 34.3 36.3 OIP3a a. OIP3 test condition: f tone1 = 2500 MHz, ftone2 = 2501 MHz with input power of –27 dBm per tone. Output Third Order Intercept Point dBm 37 41.8 — OP1dB Output Power at 1 dB Gain Compression dBm 22.1 23.5 — IRL Input Return Loss, 50  source dB — –19.5 — ORL Output Return Loss, 50  load dB — –10.5 — |S12| Reverse Isolation dB — 50 — |ISOL 1-2| Isolation between Output pin to Input pin dB — 50.3 —
  • 6 - MGA-13316 Data Sheet Product Consistency Distribution Charts, Table 4 Component List for 2.5 GHz Matching Part Size Value Detail Part Number Notes C1 402 1.8 pF (Murata) GRM1555C1H1R8CZ01D DC Blocking Capacitor C2 402 100 pF (Murata) GRM1555C1H101JD01E DC Blocking Capacitor C3 402 2.7 pF (Murata) MCH155A2R7JK Bypass Capacitor C4 402 0.1 μF (Murata) GRM155R61A104KA01D Bypass Capacitor C5a 603 2.2 μF (Murata) GRM188R61A 225KE34D Bypass Capacitor C5b N/A N/A N/A Not Used C6 402 1000 pF (Murata) GRM155R71H102KA01E DC Blocking Capacitor C7 402 10 pF (Murata) GRM1555C1H100JZ01E Bypass Capacitors C8 402 10 pF (Murata) GRM1555C1H100JZ01E Bypass Capacitors C9a N/A N/A N/A Not Used C9b 402 4.7 μF (Murata) GRM155R60E 475ME760 Bypass Capacitors C10 402 4.7 μF (Murata) GRM155R60E 475ME760 Bypass Capacitors C11 N/A N/A N/A Not Used C12 N/A N/A N/A Not Used C13 N/A N/A N/A Not Used L1 402 6.8 nH (Coilcraft) 0402CS-6N8XJBW Input match for NF L2 402 3.3 nH (Toko) LL1005-FHL3N3S Output match for Q2 L3 402 6.8 nH (Toko) LL1005-FHL6N8J Output match for Q1 L4 402 3.6 nH (Coilcraft) 0402CS-3N6XJBW Input match for Q1 L5 N/A N/A N/A Not Used R1, R2 402 0 ohm (Koa) RK73Z1ELTP Bridging Resistors R3 402 49.9 ohm (Koa) RK73H1ELTP49R9F Stabilizing Resistor for Q1 R4a N/A N/A N/A Not Used R4b 402 3.6 Kohm (Rohm) MCR01J362 Biasing Resistor for Q1 R5 N/A N/A N/A Not Used
  • 9 - MGA-13316 Data Sheet MGA-13316 Typical Performance in Demoboard for 2.5 GHz Table 5 MGA-13316 Q1 Typical Scattering Parameters, Vdd1 = 5 V, Idd1 = 50 mA Freq GHz S11 S21 S12 S22
  • 10 - MGA-13316 Data Sheet MGA-13316 Typical Performance in Demoboard for 2.5 GHz Figure 22 RF Reference Planes NOTE Measurements are made on 10 mils Rogers R04350 TRL Board. Figure 20 shows the input and output reference plane for Q1. Table 6 MGA-13316 Q1 Typical Noise Parameters, Vdd1= 5 V, Idd1 = 50 mA Freq GHz NFMin dB GammaOpt mag PhiOpt deg Rn/50 8765 103 bias LNA2LNA1 RF input Reference Plane RF output Reference Plane
  • 11 - MGA-13316 Data Sheet MGA-13316 Typical Performance in Demoboard for 2.5 GHz Table 7 MGA-13316 Q2 Typical Scattering Parameters, Vdd2 = 5 V, Idd2 = 116 mA Freq GHz S11 S21 S12 S22
  • 12 - MGA-13316 Data Sheet MGA-13316 Typical Performance in Demoboard for 2.5 GHz Figure 23 RF Reference Planes NOTE Measurements are made on 10 mils Rogers R04350 TRL Board. Figure 21 shows the input and output reference plane for Q2. Table 8 MGA-13316 Q2 Typical Noise Parameters, Vdd2 = 5 V, Idd2 = 116 mA Freq GHz NFMin dB GammaOpt mag PhiOpt deg Rn/50 8765 103 bias LNA2LNA1 RF input Reference Plane RF output Reference Plane
  • 13 - MGA-13316 Data Sheet MGA-13316 Typical Performance in Demoboard for 2.5 GHz Figure 24 Package Dimensions Figure 25 PCB Land Patterns and Stencil Design NOTE All dimensions are in millimeters, and a 4-mil stencil thickness is recommended. Pin #1 Identification Chamfer 0.30 X 45° 0.40 ±0.10 4.00 ±0.10 0.00 –0.10 0.203 Ref. 1.95 Ref.

0.65 Bsc

4.00 ±0.10 Pin 1 Dot By marking 2.70 ±0.10 Exp.DAP 2.70 ±0.10 Exp.DAP 0.85 ±0.10 TOP VIEW SIDE VIEW BOTTOM VIEW AVAGO 13316 YYWW XXXX 0.30 ±0.10 LAND PATTERN STENCIL OPENING COMBINATION OF LAND PATTERN & STENCIL OPENING 4.00 0.65 2.70 3.96 2.16 4.00 2.70 4.00 3.96 2.70 2.16 3.96 2.16 0.40 0.30 0.65 0.36 0.27 0.65 0.40 0.30 0.36 0.27 2.70 2.16

  • 15 - MGA-13316 Data Sheet MGA-13316 Typical Performance in Demoboard for 2.5 GHz Figure 28 Reel Dimensions (7-in. Reel) PS6 PS BACK VIEW Ø55.0±0.5 6.25mm EMBOSSED LETTERS LETTERING THICKNESS: 1.6mm SEE DETAIL "X" SLOT HOLE "b" SLOT HOLE(2x) 180° APART. SLOT HOLE "a": 3.0±0.5mm(1x) SLOT HOLE "b": 2.5±0.5mm(1x) Ø13.065° 45° R10.65 45° R5.2 EMBOSSED RIBS RAISED: 0.25mm, WIDTH: 1.25mm 18.0* MAX. Ø51.2±0.3 Ø178.0±0.5 RECYCLE LOGO FRONT VIEW 120° 1.5 MIN. Ø20.2 MIN. -0.2 +0.5 DETAIL "X" -0.0 +1.5*12.4 DETAIL "Y"(Slot Hole) 3.5 1.0 SEE DETAIL "Y" FRONT BACK FRONT BACK SLOT HOLE "a" Ø178.0±0.5 Ø178.0±0.5

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