MG90V2YS40

MG90V2YS40 TOSHIBA | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS ATAST-ON-TAB #110 £2. 82 4-6 6.50.3 © The Electrodes are Isolated from Case. Caras Ce = a @ High Input Impedance fe ‘| rn ei S| [5 &] 3) ¢ ea Fat jte | 8) 3) © Inch lete Half Bridge i et | TT ——— includes a Complete Half Bridge in One JAPAN’ AL fa Package. 2et0.6/28¢0.6 | | et ¢ — Enhancement-Mode | Bette | || ‘8 . “108t 08 © High Speed : tp=1.5es (Max.) (I¢=90A) 49+0.6 az03, 3+03 3 pote ot 4 : i: aman 39 ato 2 a nck g pel ea EQUIVALENT CIRCUIT 60+0.8 El E2 Cy E2 JEDEC _ ] ] TOSHIBA 2-94C1A Gy El/C2 Ge Weight : 480g (TYP.) MAXIMUM RATINGS (Ta = 25°C) Collector-Emitter Voltage VcES 1700 Gate Emitter Voltage Vors Pee fie | Collector Current c Ic A Forward Current [oc [mw | a Collector Power Dissipation (Te=25°C) | Po | too Tw Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 4000(AC 1 min) Screw Torque (Terminal / Mounting) ee 1 261001 a2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical Sensitivity and vulnerability to physical stres. itis the responsibilty of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your, designs, please ensure that TOSHIBA. products are, used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibilty is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property -or other rights of the third parties which may result from Its use. NO license’ Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Von=+20V, Von=0 | — | — [+100] nA | Collector Cut-off Current Ices _| Von=1700V, Vgn=0 | — | — | 10| ma | Gate Emitter Cutoff Voltage I¢=90mA, Von=5v | 40] — | e0l v_| Collector-Emitter ae, (roum| oman | -| oo] aa [= [owl [| - 7 Inductive Load Switching Ig=90A |— | o5|—-| . Fall Time Ra5ose | — | os] 15] (Note 1) L— | 10] — | Ip=90A, Ven=0 [= | s2f 45] v | Ip=90A, Vgp=—15V Reverse Recovery Time ter di /dt=500A / us (Note 1) 0.4 us . Transistor Stage ;— | - | 0.114 |, Thermal Resistance Rth (-c) °C/W Diode Stage P= | — Tos | Note 1 Switching Time and Reverse Recovery Time Test Circuit & Timing Chart Rg VCE oo ~Vor Toll L Voc I i ty J | Rg T 90% 90% oo Vor iA\\ ‘ft 0 VoER 10% L | 410% 10% 4 14.10% tacom! if ta(omy! toe! i “VA, 90% Typ "ton! ton | lr 50% Ipr ter 1997-03-03 2/5

200, Ic — VCE Ic - VCE Cowon Tcomon |] 2] | | | z EMITTER, | MA | ‘\\ Po =1100W 2 EMITTER || W/V i e Mrewe TTT fo ST] ge renee TZ | [| & om | | eT TN a o/s e Li] Wy y Try e Litt yy tt | e/a ef | | Wer e LL Yr Tt EL Yt vane a) ee 2g |forr i Zoe ee BT AT TT LIA i Tir tt | PATTI Pit | COLLECTOR-EMITTER VOLTAGE Veg (V) COLLECTOR-EMITTER VOLTAGE Veg (V) VcE — VGE VcE - VGE & 12) & 12) = fom TMT TT] os feos LUTE TT

2 EMITTER 2 EMITTER

e fer TWEE | og bee TT io} io} & 8 z 8 | | | ee eee ee @ @ PL LING) ob PN a ea _ Ca eT Pee ge || | he POT og UT 8 % 4 8 12 16 20 5 % 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE Vgg (V) s 2 Vcr - VGE Ic - VGE Ss EMITTER 2 ewrrren [|| | || gee UE Sf ETE ET et P COCCOIRCET) =| TREES : rt TIN C | aT tT tT Ty] Tmt yy ey |» |] oe e/a a r) SESS ee e/a A ee 2 LET PCOS ° (Ee 3 ob 0 4 8 12 16 20 0 4 8 12 16 20 GATE-EMITTER VOLTAGE Vgr (V) GATE-EMITTER VOLTAGE VgE (V) 1997-03-03 3/5

= 1000 Vcr, VGE - 9G SWITCHING TIME - Ic "LET | fy yt fy — se | S 3 = -oo-- a ea ee a ee = P\\ews J | a en \\ le A, eee ee FI Oh g =: ——— | 2 AW! 300| _COsEMON = = 003; 1 === —Tinpucmve .oap

2 A a ai Rc a ka

Ry =100 L oc=! Fl CSN Te=25°C , 8 001 | Vo EBV 0 200 400 600 0 30 60 90 CHARGE Qg (nC) COLLECTOR CURRENT Ic (A) SWITCHING TIME — Rg SWITCHING ENERGY - Ic INDUCTIVE LOAD al ——: Te= 125°C ~ INDUCTIVE LOAD rs | Yeon ee = | veccemmy = 3] Vor=1sv ‘act 2 ee 2 ea i] woeee -— g ee se 2 os) SSS Se se z oe eee 2 os pare er ae =< BT oton ae] a — 3 5 10 30 «50 100 0 30 60 90 GATE RESISTANCE Rg (0) COLLECTOR CURRENT Ig (A) SWITCHING ENERGY — Rg 200 Ip - VF ce EP ETE TT cos yee CM TT} 2 = CHC cme peer oe Goes ee B [Norstiw een 5 Hey | | tt » oT rr ee | Be te | 2 CA 2 feeder td By ) g fertnm IM TT) 6g HAA 8 errr rr} [Aa tT tt i tt | GATE RESISTANCE Rg (9) FORWARD VOLTAGE Vp (V) 1997-03-03 4/5

at Inr, trr — IF REVERSE RECOVERY ENERGY - If < COMMON -— — Te=195°0 30, _ ee | Common ee a a a Zz 1000} di/dt=500A/ ps SS SSS 5 | ze Sa gE aaa a a hn § os} FJ carnope a a a 3 03] — teatase [-—] Yoo=900¥, = 0 30 60 90 Oty 30 60 90 ical FORWARD CURRENT Ip (A) FORWARD CURRENT Ip (A) C — VcE 10, Rth (t) — tw soono FH se Coo a a & S 8! common emmrrer = [ {ifs i] a 0.03}

100 Vor=0 Ui TT TT a La il

s0|_Tex2s%e ome eee 00s SEE 03 05 1 3.5 «(10 30 50 100 10° 107? 107? 1 10 COLLECTOR-EMITTER VOLTAGE Veg (V) PULSE WIDTH ty (s) REVERSE BIAS SOA 500) sol ee zg MEERA oo

5 SER EER EEE EEE EE EEE

8 Pry rrr rry yr ry ry rr ry

2 j= SESS SSS SSSR SSS

8 GEER EEE EEE EH

3 COMMON EMITTER PERCE

3 genes ========= o5|noesan EEEEEEEE “s BRR ERE ERA 200 40000 BOO 1000 1200 1400 1600 1800 COLLECTOR-EMITTER VOLTAGE Vcg (V) TT A9F=OB-03 5/5