MG8Q6ES42 TOSHIBA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 92.7406 1yptop 8240.3 @ The Electrodes are Isolated From Case. rigs, 75703 7.5403 7520.3] [5.503 e 6 IGBTs are Built Into 1 Package. (—=—=—=) OA ae joa ae ely 3 aac e —Enhancement-Mode HE led Oe Seo ce © Low Saturation Voltage Nat a=" Es i ae BE 3 al 79,7+0.6 4-92.65 DEPTHS VCE teat) = 40VCMex) 5 : . 10506 @ High Speed : tf=0.5~s (Max.) 12-FAST-ON-TAB #110 trr =0.5s (Max.) Ja etlL a a3 E il “ed 42. 740.6 JEDEC _ TOSHIBA 2-93A3A Weight : 220g EQUIVALENT CIRCUIT + 0 GU 5 GV o GW o (BU) (BV) (BW) we es ee EV ° ov EW ow GX 6 GY g GZ o (BX) (BY) (BZ) EX ° EY ° EZ ° 261001 a2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical Sensitivity and vulnerability to physical stres. itis the responsibilty of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibilty is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property -or other rights of the third parties which may result from Its use. NO license’ Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/5

MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Collector-Emitter Voltage Gate-Emitter Voltage Vous Forward Current poo [im | os | Collector Power Dissipation | ro | so Tw Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 2500 (AC 1 minute) [ Screw Torgue P| ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC | svMBon | TEST CONDMION [MIN [1¥P, [MAX [UNI] Collector Cut-off Current Icgs _| Vor=1200V, Vqn=0 | — | — [| 10] ma | Gate-Emitter Cut-off Voltage YGE(OFR)| 10=8mA, Von=oV [oo] = | 0] v | Collector-Emitter Saturation Voltage VoE (sat) | TO= 8A, Von=16V |= [20] oo] v | Input Capacitance Von=10V, Von=0,f=1Mie| — | 900) — | oF | = | — | 08] 06] Switching iv oI Fo La | o4t 08] Time tL | — [oa [os] “ Forward Voltage Ip=8A, VGE=0 p= [is] 25 v | . Ip=8A, Vgp=—10V Reverse Recovery Time ter di/dt=100A/ ps 0.5) us Thermal Resistance Rth G—-c) = —_ | — | — | °C/W 1997-03-03 2/5

16) ce 12 COMMON Hoff TRI TT TT | & [] ]] TT YT] J common exerrer qj everrer [20 ease 3 CUPP t= -are 1 = i PTT TI

3 Te=25°C 44 > 10)

12 Pc=80W

: §

2 AY A e ft

£ LU, Ee SSS Z 4 Ho OCCU Pe SRR EASES Oe

2 COE eee — JT SS See

0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 14 16 18 20 COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE-EMITTER VOLTAGE VgE (V) VCE - VGE VCE - VGE 127 co 12 € ELE pean | € UE EE sae | Bg LUTTE TTT | tenes Bd TTT TT | tervse e FOOT e POI g gt g J

2 COCO a LO

2 LUI e JU

BT TANT rcetoa TTT 2 LTA AA heeetsa e COTA ES @ LOTSA TT B JU RARER ER Be Ji Neer SUT TT Ty ee ee oe eee 8 JU tee 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) Ic — VGE VCE, VGE — QG %0 16 ow 1000 7 yf Sumtos HHS as 1H , HE AAT , gees emer] St ee LTT, § 2, Soo eeee se ge /{| {titty = g 8 sg OO e [TTL VIZ [ELLE 8 Zz 10} < COCO Sm TA TLL” & 8 SCOOP 2 |ERAX., common E

8 COCO eee e \\VARNo eMIrrer 3

3 COCO oooh fA | [Nps sg

ee cseaey/deesacesscess eee) Cee { W/\\\\ re=: (Oe cae ASS eee y 2 4 6 8 10 12 14 16 18 20 a GATE-EMITTER VOLTAGE VgE (V) CHARGE Qg (nC) 1997-03-03 3/5

SWITCHING TIME ~ I¢ SWITCHING TIME ~ Rg 3 5 [fT] common exrrrer | COMMON eorrTER _aalivae rt ft i Voc=600V, Vgg=+15V veo=soov,tc=sa |_| | TI I | i oes 2 ee os es 2 ee iad os | a a | Eo. Ha ee re 2 dee Fy | se 1 e We soe a a a a | 00 es og — EA a) 2 4 6 8 “3 6 10 30 50 100 300 500 1000 3000 COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg () ; Ip - VF 2 4 ter, Ire = IF a - SS COMMON CATHODE Wo 2 2 5) ava = 1004 2 ee 56 lus S ot ttre ty pal Pe | 8x re eee es | Pere iS po 2 a 3 [| YI ffl | ty tt | a a ee | 2 renee fff Li 88 ee BAF connos cansone a ae jaeec eda / oon (OO TI se 0 04 08 12 16 20 24 28 EZ 0 2 4 6 8 FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip (A) C - Vcr Rthi) — tw ig tee ‘SS aaa tae | ‘ooo ee is ari ere. g so Sa pee an g OH CNS coi | cen aa BS OH tHE eH e2 CI TTT Z to) common COTM TUTTI ** NUTT b 0S Sa ere Fe FEE HE SF vge=ov FEHR dee HEH FEF ee a reeaso | YETI TUTTE UTI oor UII LTTE ETHIE FTI dos 01 08 1 3 10 30-100 “10-8 10°? 10-7 1 10 COLLECTOR-EMITTER VOLTAGE Veg (V) PULSE WIDTH ty (s) 1997-03-03 4/5

SAFE OPERATING AREA REVERSE BIAS SOA

5 Bl 10 SS]

2 “Tomax euseox TT TTT 1 . = ==== === ====—— s COM TN eT 3 gS _ SSS ad a a a jlo MAX. Nesaiiieas cra! = q coxmxvous pc SCANS 5 JSSSSSSSS Sates BFP TTHfh Noreranox NCIND | ARE EE 8 ath 2 OEE BL TTI | Nill NUIT | 8 | 1 N 0.6 8 'hrsnaue | i aa? =SSSoSo S05) Bouse Tenasre PENNE — EEN | common enmrrer || | | | ||| og GuRves Must BE FTTINT TTT 1 3 ol] gs18c Se ec PRRATED worn CNM LUI 1 3 005 Vop=ti8v Sp 0.03) ASME Oke | YTNNT TTI T ae PEPE 9: TEMPERATURE. oot Pr TT yt “1 3 10 30 100 300 1000 ©3000 “0 200 400 600 800 1000 1200 1400 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) so T-0-038 5S