MG75Q2YS40 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 4—FAST-ON-TAB #110 © High Input Imped: aa igh Input Impedance 3] I lek Roller qe © High Speed : tp=0.5s (Max.) is) EL §1 3 igh Speed = t= 0.51 (er No trp = 0.58 (Max.) a 7 se | [23205 |23+05 | 5) a 3 ¢ Low Saturation Voltage JAPAN goso3 S| + : VoK(sat) =4.0V (Max.) | sss0s @ Enhancement-Mode 4405 4405 9.9408 27405 a a @ Includes a Complete Half Bridge in One pa fl # Package. 3 — ”] eae 3 © The Electrodes are Isolated from Case. Gi) a EQUIVALENT CIRCUIT | ____sssos__J | sassos El E2 JEDEC - C1 52 TOSHIBA 2-94D1A Weight : 202g Gl E1/C2 G2 (Bl) (B2) MAXIMUM RATINGS (Ta = 25°C) Collector-Emitter Voltage Vers | 200 | Gate-Emitter Voltage Vors [vo [iw fos Collector Current De Ic A Forward Current A Collector Power Dissipation (Te=25°C) Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 2500(AC 1 minute) Screw Torque (Terminal /Mounting) Pee sm | 610016442 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss SP human life, body injry or damoge to propery. In developing” your designs, please ensure shat TOSHIBA produds afe used within specited Operating ranges as set forth in the ‘ost raceme products specications. Also, please Keep in mind the. precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-03-03 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL | TEST CONDITION Gate Leakage Current Ven=+20v, Von=0 | — | — | #10] 2a | Collector Cut-off Current Ices _| Vor=1200v, Ven=0 | — | — | 1.0] ma | Gate-Emitter Cut-off Voltage Ig=75mA, Von=5V | 30/ — | eo] v | Collector-Emitter Saturation Voltage YeE(sat) | 1O=75A; VGE=18V |= | 20) 20] v | . Vor=10V, Vgn=0 | = | os] 0.6 | Switching Time (Tt ton | ay 2 [=] oaf os] 0 | — | 02] 05 | TRY oo [= [oa] 15 | Forward Voltage Tp=75A, VGn=0 | — | 20] so] v | ; Ip=75A, VGE=—10V Reverse Recovery Time ter iy at 1008 us 0.25} 05] xs ; [transistor | = | = | 022 | Thermal Resistance Ringo) °C/W [Diode TE — | — | 8] Q61001EAA2" © The information contained herein is presented only as guide for the applications of our products No responsiblity is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1997-03-03 2/5

160 Ic — VCE _ VCE - VGE

Tees] STS > EMITTER 8 ee ea s LL 2 120) =H e LLL ZT Beeson TT | Bos _— eT LE IE EE E _ 4 oe peso eft TTT | on) 4eeneeeeee ys eA SSS ee) Ane = LLATTTT Tre 3 CEEE EET Tt 0 2 4 6 8 10 0 4 8 12 16 20 COLLECTOR-EMMITTER VOLTAGE VcgE (V) GATE-EMITTER VOLTAGE VgE (V) < 2 VCE - VGE = VCE - VGE s LELET A LI coe s LEEL LT LI ome

8 EMITTER s EMITTER

3 s | d E LN ec E pL pS : a ee eee eee e ||| | (Meee eS z Lr] eee eee eee 8 0 8 o 0 4 8 12 16 20 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) Ic — VGE VCE; VGE — QG. 160, & 1000; Wi 20 _“TTTITT ETT ~ | gow LLP UAT ae F of mem LILLIA esCCPeT TT) 8 HERCSSeUACEH SOS 5 2 of TAT TT, s

24 Tt ty tT 2 “TEAL”

Eee TTT) oa YD ZENwSrT ey E é Ye = | E-UMLEELETLLLet ¢ i. LY von=3¥ 2 VCE, é 0 4 8 12 16 20 0 100 200 300 400 500 600 GATE-EMITTER VOLTAGE Vgg (V) CHARGE Qg (nC) 1997-03-03 3/5

SWITCHING TIME - Ic SWITCHING TIME — RG a 5) a

3 COMMON EMITTER as,

eee veonw.re=ea [TTI = cd | the te Ae [ ton _] —t g STR rir er a 2 on err | 2 yf ae ea — HIT ee TTT 0.05 [a ost} | CoMMON errr mall “| veo=600v, ver=+i8v 0 [| | [__|Rentsa. te=28° Hye] 0.01 oosLOo i 0 20 40 60 80 05 1 3.5 10 30 50 100 300 COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg (a)

160 Ip — VF g_ 00, ter, Ir — IF

common TT TT dl | 8] canes, 120) Be Te=25°C Er * =105°0/ 50) Es se a a | i a pa z a / ee | [| [ . | ° BEEEEES/ |_| BS Ht | 40 a5 eS SS | & ri |) YA tl eg ,- | [ ff yf (ane 4a 2 Lit Tt tt ft 0 05 1 15 2 25 a 0 20 40 60 80 FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip (A) C — VCE Rthit) — tw 10000 ee VOTO eT S000 HEE EEE set

0 Se a 4 sf oo

= ret ea eel S000 EH HE EHR . OS] SSS CO Sn 5 os Ste 8 oe eT ee ial Fi SS so] Vgr-0v = HSER SH MG a | 30] eee | Ge i A ro te=2ee__ FTN PTI TTT oot LIM TUTTI TTT TAT 0.03 01 08 1 3 10 30 ~—«:100 10°? 107? 1077 1 10 COLLECTOR-EMITTER VOLTAGE Vcg PULSE WIDTH ty (s) 1997-03-03 4/5

SAFE OPERATING AREA REVERSE BIAS SOA 300 500 nny pews cuss HI | ano EES 2 mpenancoen NU 2 wee gS HN gS SSSA 30) ah BOTTLE NC EEN 2 ot tt} Pecor\\iee Neca 1 ESSSSESSSSSS=S z 10 NA | a Oe eee BF SNC ome EE BREE HH Boo] Pulse tense NEE 5 ft Tt tt 3 {curves musr pe CNT NT o| T<125°C === BERENS we CENCE 8 05) vorssuv EMBO INT TTT | oiLtere PT | 1 3 10 30 100 300 1000 3000 “0 200 400 600 800 1000 1200 1400 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-03-03 5/5