MG75Q1BS11 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 5305 3-Me e z High Input Impedance | aid! @ High Speed : tp=1.0/s (Max.) UY (ees Ps Low S; Volt Vi 2.7V (Max.) 3 s cee 3 i © Low Saturation Voltage: VCE (sat)=2- lax. Si INS Sd 8 Vest & @ = Enhancement-Mode = 4 GE2+03 2 © The Electrodes are Isolated from Case. 29406 S35+05 3 RYE 05 $ 8 > —_t FY ry [| & EQUIVALENT CIRCUIT qi a po c 8 G@)o—! JEDEC - z TOSHIBA 2-33D1A Weight : 90g MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Collector-Emitter Voltage Vcrs 1200 Gate-Emitter Voltage Vans [pe fm [| Collector Current c c 5 A Collector Power Dissipation (Te=25°O) Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 2500 (AC 1 Minute) Serew Torque(Terminal/Mounting) | — | 2/3 | Nm Q61001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or ‘all due to their inherent electrical Sensitivity and vulnerability to physical Stress. is the responsibilty of the buyer, when lang TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibilty is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property or other rignts of the third parties Which may result from Its use. NO license Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/4

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current VGE=+20V, Vcn=0 | — | — | +500 Collector Cut-off Current Ices _| Vor=1200V, Vgn=0 | — | — | 10{ ma | IgS1mA, Vop=0 Note1 |1200[ — | — | v | Gate-Emitter _ _ Collector-Emitter Se [revs omen [=| al ele : VoR=10V, Ven=0, | = | os] 06 | 7 wS Time Fall Time 0 ‘Ty IBV | — | o6] 10] ‘Thermal Resistance [emd-o [= = = J 0a foc] Note 1: Do not apply the over rating voltage. 1997-03-03 2/4

"F xcer| es = w+ | tt Te=25°C i Tt ere eo FEES | P a We ee ee 8 | | P74 a E sy | /sa en Bp Hebe i} . 1¢=150A | aan : Lot fo hesseet T Brees PP i) A 8 fe COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE-EMITTER VOLTAGE VgE (V) VCE - VGE VCE - VGE — 127 a 12 BFE como 5 Pid et ide coon Cole E es en I eee STE | te-25 oe a | PRA TE frre g | a es 0 eo a g CT] BT Xe i OCS : OOS aaa Poe ES ce De 8 aaa sé pip pti § ptti rtp tit 0 4 8 12 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) Ic — VGE VCE; VGE — 9G. fy oe,

2 VoE=5V > RL=82 8

~ 5 Te=25°C > ee ee St | | | 8 Poe Se s os | | Z Ad, 2 S 4007-—\\ 7 P10

8 Efecto TT 2 WLLL E

Ce ee) 3 a 7 L} : ae ee l/c TAS Sts E y g PRLS TT 7A | I | 8 ASS 300 400 308 0 4 8 12 GATE-EMITTER VOLTAGE Vgg (V) CHARGE Qg (nC) 1997-03-03 3/4

SWITCHING TIME - Ic SWITCHING TIME — Rg COMMON EMITTER 29 COMMON EMITTER UM LL Voc=600V, Vgp= +15V, Rg=160 10] Voc=600V S| Te= 26°C vor=+15V PE DAG =e te e = see oe S$ Titel, 8 fem ER lo as=5o=======S g [tere ea AA Ae ce=-=- =~ — oeaeee e Ure TT a Zz meses aes oe) 2 eee 5 Sea aa CCC, - DEERE | Sys ere z mn Ce — FA a LAAT | | Le mL | os} te oc eer ttt eee SSeS peer | LTH LTT oof rrr rrr ol asl 0 10 20 30 40 50 60 70 80 1 3.5 10 30 50 100 300 500 COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg () C-Vc Rthit) — pr ae ae P | nwo FRR PEt PANU I 2h Peaie 3352 SS SSE ees Series & 5 ed gE ° 8000 HCN =e eee ee eel ee ee |

8 NI eS See ee

sol TTT TTS cel &. OCH ee rr 300, Ven=0 i) i g se ootiti ee eset eee ti ee ees "SS SHH 6) Sete 80s 01 08 1 3 10 30100 9b 10°? 10" 1 10 COLLECTOR-EMITTER VOLTAGE Veg (V) PULSE WIDTH tw (s)

500 SAFE OPERATING AREA REVERSE BIAS SOA

2 Mouseuuseo x TTT CU 2 wee

=, PNG NAS 4 a a NT i ptf J CETIINE ETE CN —========—== === 5 of “Stren WoW LL g EERE EEE EEE EEE PUEeaay ome | 8 te [eeeenarone. {|| | | on PPT Pre 4 1 33° #10 3050 100 300500 1000 3000 “0 200 400 600 800 ©1000 1200 1400 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-03-03 4/4