MG75J6ES50 TOSHIBA | Alldatasheet
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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm 4-$5.5+0.3 7-M4 MOTOR CONTROL APPLICATIONS. ‘0-18 10-10 eS on-tap #110 eT | | eh Sl lee @ The Electrodes are Isolated from Case. Bese aay ap Li da] s a BX EX BY E EA +H © High Input Impedance. bs i ae gall 12 3 =| = (SES UR ae © 6 IGBTs Built Into 1 Package. zed aa ee: ey TT TTT TF @ = Enhancement-Mode. aes 8+0.5. 8.50.5, q © High Speed : te=0.30s (Max.) (I¢=75A) Sores eee tyr =0.15s (Max.) (Ip=75A) 80+03 94¢08 bd i Mays Myo Zi Low Saturation Voltage 5 Mas Mas Mas __ dl +). : VCE (sat)=2.70V (Max.) (I¢=75A) 3 _ ; +, a] et B 92408 84406 JEDEC = TOSHIBA 2-94A2A Weight : 505g (TYP.) EQUIVALENT CIRCUIT +0 O+ a bongh omg eve - oy EVo ov EWo ow exe t ore} oxo EXo EYo EZ oO -o o- 2610016402 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury. or damage to property. In developing your designs, please ensure. that TOSHIBA. products are used within specified Operating, ranges as 4at forth in the most recent products spectications. Also, please Keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibility js, assumed by, TOSHIBA CORPORATION fof any Infringements of intellectual property-Or other rignts GF tne thita parties Which may result rom Ite use. ‘NO Teense’'s granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/6
MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Collector- Emitter Voltage [ vous | 600 Tv Gate-Emitter Voltage Vous Collector Current 3 A Forward Current £ A | ims | tw | 150 Collector Power Dissipation Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 2500 (AC 1 min.) Screw Torque (Terminal/Mounting | | — [2/3 | Nm | ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC | SYMBOL] TEST CONDIMON [Man [TP [MAX [oT] [Gate teakage Gunent | gus [Von==20v, Vop=0 | — | — [2000] a | Collector Cut-off Current Icgs _|Vcr=600V, VoR=0 [ — | — | 10] ma | Gate-Emitter Cut-off Voltage Ig=7.5mA, Vop=5V [50 | zo] sol v | Collector-Emitter Saturation Input Capacitance Vcr=10V, Van=0, f=1MHz | — | 7100] — | pr | Turn-on Delay Time ; | — | 0.08 | 06] Inductive Load Switching] Turn-on Time | ton | I¢=75A | — | 040] oso] Time | Turn-off Delay Time Vog=15v | = | o20[ o40} “ Fall Time waey | — | 015 | 0.30] oO | — | 0.50[ 1.00} Forward Voltage Ip=75A, Von=0 | — | 210[ 280] v | ‘ Ip=75A, VGE=—10V Reverse Recovery Time ter di/dt=100A/ ps 0.08] 0.15} ys Thermal Resistance Rth (j-c) Cc/W [pig | = I = J 000 4997-03-03 2/6
Note 1 Switching Time Test Circuit & Timing Chert Rg Von 90% -Vox Ic {]_L voc I i ty fl RG 1 YX 90% ! 90% 9 Vow to%if! 10% 10%if | 110% ta (om; | ip td(on); fi | \\ ! 1 | * toff | ‘ton | 1997-03-03 3/6
160, 160) |p | TLE SL ede Lf | ET e | yy ttt , LYALL a a et | itt 2 4 | eee 3 7 B y 2 ae Q /’ COMMON EMITTER g H/ é Wi Te=125°C B COMMON EMITTER B My 3 “Ty Te=25°C 3 TL Von=1ov | [TT Tt 8 /| 8 AT LAR DAEEEEEEEE WAT TT TT tT tT] old ° 2 4 6 8 10 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) Ic - VCE _ VCE — VGE 160) = 16 See 7, ee = | common ree | [IT] | ||
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om | fol | Spee eee / ae 2 ETT i ol : ey. tt W litt ef tT a Te Fa $ = 80] r [. % 8 SLL TF | conmmos sara e tit tT Une y Ty ey ef tty Tey 3 4 A g 4 (L150 e [i iTA7y tt tl Bf] | | tem [| Ali li | ¢ LL itt ty LY g TT Td 0 1 2 3 4 5 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VcgE (V) GATE-EMITTER VOLTAGE VgE (V) Vcr - VGE Vcr - VGE S16 E16) Soe ine ~ eee EE 2 12] 2 12] e LIT TTT Tt e {TTT TTT 3 3 Lit tT ty yt et iT TT Es 8] Es 8] FA Fa Ee Lit ttt ty BE Lit Try |
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LLELYAT TTT g Powe, * a CS ) toe a — a — 8 GATE-EMITTER VOLTAGE VgE (V) CHARGE Qg (nC) ton, td(on), tr — Ic 3 ton, td(on), tr — RG 0 ee ii
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‘oo Ip - VF 2 ter, Inr — IF common carnove | | |y | |_| a ones FE 2 | vor=0 AT a cmevoo| [| | | = 120 i g. | e LLEVA et te g y = — ar) fj 2! eS 2 7 ge a ETO) oe = VA Y/ | 2g ai/at=100A/ ps [Lye | | Pi Yor=-10v % os 16 2483 40 a 5 a @T00 FORWARD VOLTAGE Vp (V) = FORWARD CURRENT Ip Cc - Vcr Rth(t) — tw & Te=25°C Poe Ses é a oe | = eet Se es | & a | | = sooof HH Sth g a Sees c aemeec a Vena eee Pe | name | Soop LUMI TUTTI NSETIIN 6 ose TTT seal 30) pte i a | ee | ro 228% 1 ost UINIE TUTE TTI TT 03 1 3 10 30 ~=—:100-—-300 10-° 10°? 1077 1 10 COLLECTOR-EMITTER VOLTAGE Vcg (V) PULSE WIDTH ty (s) SAFE OPERATING AREA REVERSE BIAS SOA “fem eno TAT “CLT TTT TTT) 2 seoie wax. comnnvous SELINA 2 POPP : SERS NE) 0g “OOO Fa fromm HH Nii 6 LTT EL EE E glll Ne E "TELE | 2‘) cunvesuesres = INE NY a ere ReSggeeeee & | wmmenase ns” LLL. [Tl 5 | Noe=siew TepeRaTURE. | Seng ee rfel re=wo | | | | | | | i ft] os 8100 300 00 S100 Foo 300 aod 500g —T00 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) ins 4597-03-03 016