MG75J1BS11 TOSHIBA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 80+05. 80405 al [| 3-M4_ e@ High Input Impedance o- .—_- 2 oad a | a e High Speed : te=1.0us (Max. =75A) Site ¢ edhe 4 1h Soe te 0 e006 Safety Sear ¢ Low Saturation Voltage : VoR(sat)=2-7V (Max.) (I¢=75A) % | 3] | @ Enhancement-Mode ia 1433203 Z| @ The Electrodes are Isolated from Case. 530+03 346404 EQUIVALENT CIRCUIT a] nen CA Cc 1909 eo) G@yo a E JEDEC - TOSHIBA 2-33F1A Weight : 86g MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Gate-Bmitter Voltage Vors Collector Current £ A Collector Power Dissipation [| ro | 200 Tw Junction Temperature Storage Temperature Range Ta0~196 Isolation Voltage 2500 (AC 1 Minute) Screw Torque (Terminal/Mountingy [= — | 2/3 Nm | Q61001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products, Nevertheless, semiconductor devices in general can malfunction or ‘all due to their inherent electrical Sensitivity and vulnerability to physical Stress. is the responsibilty of the buyer, when lang TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of @ TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA. products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook @ The information contained herein is presented only as a. guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property or other rignts of the third parties Which may result from Its use. NO license Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION co others @ The information contained herein is subject to change without notice. 1997-03-03 1/4

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Van= +20V, Von=0 | — | — [+600] na | Collector Cut-off Current Icrs _|VcE=600V, Von=0 | — | — | 10] ma | Gate-Emitter Cut-off Voltage Ig=75mA, Vop=5V [ 30] — | eo] v | Collector-Emitter a Input Capacitance VcE=10V, Vog=0, f=1MHz | — | 6000 | — | pF | |= | os] 08] 330 GS ev owt 33 [= [oa] 1.09] Switching Time tir us Fall Time “sv |= | 06] 10] Thermal Resistance [Rogo [Oo = = | — [o.625 1997-03-03 2/4

Ic — VCE VCE - VGE 160; & 16; [ | J] ps Jel ‘COMMON EMITTER we 1 | |] I ICOMMON EMITTER Sa | bee Pot TT | [ewe on) Ae 2 “COATT . 8 i oh e TT AAP tJ YA g | on /eeeeee e LEELA PSI} gg Eel TT po aa g = LAT tTirTi t+ 2 tt fem TP? Pr COLLECTOR-EMITTER VOLTAGE VcgE (V) GATE-EMITTER VOLTAGE VgE (V) VCE - VGE VCE - VGE Ss 16 5 16 sae © LLL TILT como ee ee FTE TTA UL) earres 8 “COCA ee | ge fi tity Pt ttl 2 fi TT Tl BE TEEPE TTT BT he TI ee a tty Ute |S BP CopOReESES) 0 Dopo

8 Ly) g _ Fe ——

0 4 8 12 16 20 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V)

160 Ic — VGE a VCE, VGE — QG

_ |}COMMON curren) | /Jf, VA | | | < woo ET COMMON EMITTER 16 €

2 Wvceesv MWe ee ee :

2 Llp eefA |] g me 5

g i] 3 < et tT TAL TT 3 Ly é OOP] bye i] ann ie 3 aoa’ 200 aan E i / PZ Be TTT & en) eee eee es) Cee: LAT lt [| | 2 PY tt ° GATE-EMITTER VOLTAGE Vgg (V) CHARGE Qg (nC) 1997-03-03 3/4

SWITCHING TIME - Ic SWITCHING TIME — RG a 3 == SS eS A a a 8S = | Sree pCi 0g Eats cI | | PTT || re ee g ae ee com 5 SE Voo=s00v 3 oft Vor=+18v OES SHS voe- tiv po fp ee EEE iene ee oogh_—L Hii 1 “0 20 40 60 80 100 1 3 10 30 100 300 COLLECTOR CURRENT Ig (A) GATE RESISTANCE Rg (9) C — VCE Rthit) — tw $ Fe rr QR pabostaii meme memati mesial ae ee a HRA HE go POS ao F coo AIT ETI 2, CH so] common FSSC Eid 22 oe Soo) emrrmen HEN PA Coe HH 2) ESS Sa

3 Vor=0 Ne _ z a ee |

soo) f=! CA] SNOT TTI 5 aa men25rc FEEHES= PRUE Cros SETHE Eso LUM TT TTT CTH PULSE WIDTH tw (s) COLLECTOR-EMITTER VOLTAGE Vcg (V) REVERSE BIAS SOA soo SAFE OPERATING AREA 300 GRRE EEE fic max wunseo xe —T UT a 2 pote Max. conmUOUR LENTILS 0a | BO 0] Doorman SEF ies on ee i _ ee oe Se oe | eof sxc NN aeeeeeeeeee eee z ee SREEH EH eae ee Ce

5 PULSE Tc=25°C I

£5) commsuusree” HEN EE NEE BE yeti tia dey Ay 3 peratep uinearty -}/} Nt TT 3 qsree SS B | wrt venease rs 5 asf vorssxw FP COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-03-03 4/4