MG600Q1US61

MG600Q1US61 TOSHIBA | Alldatasheet

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TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications /Gb7/G20High input impedance /Gb7/G20High speed: tf = 0.3 µs (max) Inductive load /Gb7/G20Low saturation voltage: V CE (sat) = 2.6 V (max) /Gb7/G20The electrodes are isolated from case. /Gb7/G20Enhancement-mode Equivalent Circuit Maximum Ratings (Tc /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 1200 V Gate-emitter voltage V GES /Gb120 V Collector current DC (Tc /G3d 80°C) I C 600 A Forward current DC (Tc /G3d 80°C) I F 600 A Collector power dissipation (Tc /G3d 25°C) PC 5400 W Junction temperature T j 150 °C Storage temperature range T stg /G2d40 to 125 °C Isolation voltage V isol 2500 (AC 1 minute) Vrms Terminal /Gbe/G20 3 N·m Screw torque Mounting /Gbe 3 N·m Unit: mm JEDEC ― JEITA ― TOSHIBA 2-109F1A Weight: 465 g (typ.) G E E C

Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE /G3d /Gb120 V, VCE /G3d 0 V /Gbe /Gbe /Gb1500 nA Collector cut-off current I CES V CE /G3d 1200 V, VGE /G3d 0 V /Gbe /Gbe 1 mA Gate-emitter cut-off voltage V GE (off) I C /G3d 600 mA, VCE /G3d 5V 6.0 7.0 8.0 V Tc /G3d 25°C /Gbe 2.1 2.6 Collector-emitter saturation voltage V CE (sat) IC /G3d 600 A, VGE /G3d 15 V Tc /G3d 125°C /Gbe 2.7 3.2 V Input capacitance C ies V CE /G3d 10 V, VGE /G3d 0 V, f /G3d 1 MHz /Gbe 50000 /Gbe pF Turn-on delay time t d (on) /Gbe 0.3 /Gbe Rise time t r /Gbe 0.2 /Gbe Turn-on time t on /Gbe 0.5 /Gbe Turn-off delay time t d (off) /Gbe 0.5 /Gbe Fall time t f /Gbe 0.1 0.3 Switching time Turn-off time t off Inductive load VCC /G3d 600 V IC /G3d 600 A VGE /G3d /Gb115 V RG /G3d 2.0 /G57 (Note 1) /Gbe 0.6 /Gbe /G6ds Tc /G3d 25°C /Gbe/G202.4 2.8 Forward voltage V F I F /G3d 600 A, VGE /G3d 0 V Tc /G3d 125°C /Gbe 2.2 /Gbe V Reverse recovery time t rr IF /G3d 600 A, VGE /G3d /G2d15 V, di/dt = 1500 A//G6ds /Gbe 0.2 /Gbe /G6ds Transistor stage /Gbe /Gbe 0.023 Thermal resistance R th (j-c) Diode stage /Gbe /Gbe 0.05 °C/W Note 1: Switching time and reverse recovery time test circuit and timing chart IF 90% Irr 50% Irr IF Irr trr IC RG RG L IF /G2dVGE VCC VCE VGE IC 90% 90% 10% 10% 90% td (off) toff tf trtd (on) ton 10%

< VCE (sat) Rank > < V F Rank > VCE (sat) VF Rank Symbol Min Max Rank Symbol Min Max 21 1.80 2.10 D 1.90 2.20 22 1.90 2.20 E 2.10 2.40 23 2.00 2.30 F 2.30 2.60 24 2.10 2.40 G 2.50 2.80 25 2.20 2.50 26 2.30 2.60 27 2.40 2.70 < Mark Position > 24D Mark position

Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) IC – VGE Collector current I C (A) 0 5 10 15 20 Common emitter Tj /G3d 25°C IC /G3d 300 A 900 600 0 5 10 15 20 Common emitter Tj /G3d 125°C 600 IC /G3d 300 A 900 900 500 400 300 200 100 0 2 4 6 8 10 Common emitter Tj /G3d 25°C 600 700 800 VGE /G3d 9 V 900 500 400 300 200 100 0 2 4 6 8 10 Common emitter Tj /G3d 25°C 600 700 800 VGE /G3d 9 V 0 5 10 15 20 Common emitter Tj /G3d /G2d40°C 900 IC /G3d 300 A 600 900 500 400 300 200 100 600 700 800 Common emitter VCE /G3d 5 V 0 14 10 6 2 8 4 12 Tj /G3d 125°C 25

Switching time (ns) Switching loss (mJ) Forward voltage V F (V) IF – VF Forward current I F (A) Gate-emitter voltage V GE (V) Charge Q G (nC) VCE, VGE – QG Collector-emitter voltage V CE (V) Gate resistance R G ( /G57) Switching time – RG Switching time (ns) Gate resistance R G ( /G57) Switching loss – RG Collector current I C (A) Switching time – IC Collector current I C (A) Switching loss – IC Switching loss (mJ) 600 500 400 300 200 100 0 1 1.5 2 2.5 3 Common cathode VGE /G3d 0 125 Tj /G3d 25°C /G2d40 0.5 0 10 15 20 255 1000 100 VCC /G3d 600 V IC /G3d 600 A VGE /G3d /Gb115 V : T j /G3d 25°C : T j /G3d 125°C Eon Eoff 0 10 15 20 255 100 10000 1000 VCC /G3d 600 V, IC /G3d 600 A VGE /G3d /Gb115 V : T j /G3d 25°C : T j /G3d 125°C tr td (on) td (off) tf toff ton 1000 10000 100 0 100 200 300 400 500 600 VCC /G3d 600 V, RG /G3d 2 /G57 VGE /G3d /Gb115 V, Ls /G3d 100 nH : T j /G3d 25°C : T j /G3d 125°C tr tf td (off)toff ton td (on) 100 1000 0 100 200 300 400 500 600 VCC /G3d 600 V, RG /G3d 2 /G57 VGE /G3d /Gb115 V, Ls /G3d 100 nH : T j /G3d 25°C : T j /G3d 125°C Eoff Eon 1000 800 600 400 200 1000 2000 3000 4000 5000 Common emitter RL /G3d 1 /G57 Tj /G3d 25°C VCE /G3d 0 V 600 200 400

Collector current I C (A) Collector current I C (A) Forward current I F (A) Irr, trr – IF Peak reverse recovery current I rr (A) Reverse recovery time t rr ( /G6ds) Forward current I F (A) Edsw – IF Reverse recovery loss E dsw (mJ) Collector-emitter voltage V CE (V) C – VCE I V Capacitance C (pF) Collector-emitter voltage V CE (V) Safe operating area Collector-emitter voltage V CE (V) Reverse bias soa Pulse width t w (s) Rth (t) – tw Transient thermal resistance R th (j-c) (°C/W) 0 100 200 300 400 500 600 1000 100 VCC /G3d 600 V RG /G3d 2 /G57 VGE /G3d /Gb115 V : T j /G3d 25°C : T j /G3d 125°C trr Irr 0 100 200 300 400 500 600 100 VCC /G3d 600 V RG /G3d 2 /G57 VGE /G3d /Gb115 V : T j /G3d 25°C : T j /G3d 125°C 300 0.1 10000 100000 1000 5000 50000 500 3000 30000 1 10 100 5 50 0.5 30 3 0.3 Common emitter f /G3d 1 MHz Tj /G3d 25°C Cies Coes Cres 1 3 10 30 100 * Single nonrepetitive pulse Tc /G3d 25°C Curves must be with increase in temperature. 1000 3000300 100 300 1000 3000 IC max (pulsed) * IC max (continuous) 100 /G6ds* 1 ms* 50 /G6ds* Tc /G3d 25°C 0.0003 0.001 0.01 0.1 1 10 0.001 0.003 0.01 0.03 0.1 0.3 Transistor stage Diode stage 0 200 400 600 800 1000 1200 1400 100 1000 10000 Tj /G3c/G3d125°C VGE /G3d /Gb115 V RG /G3d 2 /G57

Collector-emitter voltage V CE (V) Short circuit soa Collector current I C (A) 0 200 400 600 800 1000 1200 1400 100 1000 10000 VGE /G3d /Gb115 V tw /G3d 10 /G6ds Tj /G3d 125°C

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE