MG600Q1US41 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. ¢ High Input Impedance EQUIVALENT CIRCUIT @ High Speed : tp=0.5s (Max.) Cc E ¢ Low Saturation Voltage : VCR(sat)=4-0V (Max.) Cc E e@ Enhancement-Mode @ Outline : TOSHIBA 2-109E1A G (See page 3 for the device outline) (B) © = Weight 590g (TYP.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Collector-Emitter Voltage Vors 1200 Gate-Emitter Voltage Vous [pc [iw [ao | Collector Current c A a Forward Current c FE A 1200 Collector Power Dissipation Pi (Te=25°C) c w Junction Temperature Storage Temperature Range —40~125 Igolation Voltage 2500(AC 1 minute) Screw Torque (Terminal : M4/M6 / Mounting) 2/3/83 Nm 261001 a2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical Sensitivity and vulnerability to physical stres. itis the responsibilty of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibilty is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property Or other rights of the third parties which may result from Its use. ‘NO license Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/6

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Van= £20V, VoR=0 | — | — | +60] 2a | Collector Cut-off Current Icgs _|VcE=1200V, Vgn=0 | — | — | 60] ma | Gate-Emitter Cut-off Voltage Ig=600mA, VoR=5V | so] — | so] v | Collector-Emitter Input Capacitance VcE=10V, Von=0, f=1MHz | — | 72000 | — | pF | | = | oa] 06] Switching 15V any 2g |=] ol 08] . ow! S sow [= J os] 15] Forward Voltage Tp=600A, Von=0 |= | 2s] a2] v | . Ip=600A, VGp=—10V Reverse Recovery Time te | di/dt=1000A / ps 0.25 “Ss , rns | — | — [none Thermal Resistance RthG-c) °C/W pide OT = = J 0.125) 1997-03-03 2/6

OUTLINE : TOSHIBA 2-109E1A Unit in mm fie Sa) lea TT) he © D ; 3 fee ah | IFEEEE a l 4 il 4) FF) BF alte lowe massa vas | al | hstos laszos 28406 | 29.3412 | 10840.8 29408 1ssi08, j188108 22.5408 66+08 Bios wes [2 _| . i i a —EE ia __ , aL Weight : 590g (TYP.) TTTTTT«dA'DS-03-03 3/6

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2 | WSS es //) es ee eS ee | / A e/a oY / si A oe! aa 2 gf il YW ee) A AEE oi LAPP Perry COLLECTOR EMITTER VOLTAGE VcE (V) COLLECTOR EMITTER VOLTAGE VcE (V) VCE - VGE a VCE - VGE & CTE LLY comox a Bg _P tt fT | eurer i a a s EEE sg ERR a a es ee SHOES CREECH 3 z E Eee HAS E EEE See nto] i ee | ce a P a e OPS Se eg a | es a a 2 ~trrrrrrre 4 | ° 0 4 8 12 16 20 ° 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) _ VcE - VGE Ic —- VGE = fy yy TT common’ common |_| | | | | 8 oie a a ee ae a OO ro00h EY TY a Je ee Zz 4 Oe ee es e/a | ee a0 {—— ee ee 2 ||| 1 -1f ae ae ee ee A | Ne i a a 2 | tT | ees ee) Fe ee 3 rT T_T rT oe ee) a P ERRRRER PH “Er 8 ZA ° % 4 8 12 16 20 % 4 8 12 16 GATEEMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) 1997-03-03 4/6

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2 of Sepeeerto oo | Bop fp As Zi) | ® ott rte 2 EE AAA 0.3] — Ss eet z aad GH oll FTTH LET 1 (as? 7 aoe 13-5 1g a0 60-109 300 a GATE RESISTANCE Rg (9) FORWARD VOLTAGE Vy (V) 23 ter, Ir — IF Cc - VCE ose a See ee | 1000 100000 nti re TH—t Cie Hil Lr ——— © oon) ef et i NNT 8 ba St © S000 ER i a v= rooo0 ll TTT Neel BE 100 — ||) © sooo i A Sz SSS: =] A A LL a rn § sooo Lill {TAM | LTT res LIT BEL | renaee | airat=1000A 8 300] tints Foi Fil 28 | =~ tas | vor=-10v vogl Tne Cen Fe ce 1% Too 200-300 400-500-600 700 0030108. 1 3 ~~ +10 80-100 a FORWARD CURRENT Ip (A) COLLECTOREMITTER VOLTAGE Vcg (V) 1997-03-03 5/6

Rth(t) — tw SAFE OPERATIHG AREA 1 aa Lo max PuLse THT 2 ERE lic . ) 3 g Teas FA eal 2100 uae Gomera x LN g CO mai 500M SEE NE Aes DIODE STAGE ° a ee or 3. p= qq LLIN ETI ESN |

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B00 eH Era ERE 2 of keane wnt pC OPERATION = a aa S shincrease x CNHI oor LUTE THI ETHIE TC HITiH 1 wore TNT 10-* 10-7 1077 1 10 1 3 10 30 100 300 1000 3000 PULSE WIDTH tw (s) COLLECTOREMITTER VOLTAGE Vcg (V) REVERSE BIAS SOA i | 2 -Prrrry | i a | 2 10 ——— Zz 30] Tj=125°° rs es es

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GE=+t15V san 0 200 400 600 800 1000 1200 1400 COLLECTOR EMITTER VOLTAGE Vcg (V) 1997-03-03 6/6