MG600 | DigiCamel IC Datasheet

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MG600J1US51 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. @ The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT @ High Input Impedance Cc E e@ Enhancement-Mode Cc ott ai. E © High Speed : tp=0.30s (Max.) (Ic = 600A) | trp = 0.1508 (Max.) (Ip= 600A) G e@ Low Saturation Voltage : VCE (sat)=2.70V (Max.) (I¢ =600A) @ Outline : TOSHIBA 2-109E1A. See page 3 for the device outline MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Collector Emitter Voltage 7 Gate-Emitter Voltage VGES Collector Current | pe} tof on | | ims | Icp [1200 Forward Coren [ims [ew [1200 ‘ Collector Power Dissipation (Te=25°C) Pe w Storage Temperature Range —40~125 Isolation Voltage 2500 (AC 1 min.) Screw Torque 261001 a2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical Sensitivity and vulnerability to physical stres. itis the responsibilty of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibilty is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property or other rignts of the third parties Which may result from Its use. NO license Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/6

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL | TEST CONDITION jaan. | rye. | wax. | uNtT] Gate Leakage Current Iges _|Vqp=+20V, Vop=0 | — [| — [+500 Collector Cut-off Current Icgs _|Vor=600V, Vgn=0 | — | — | 4.0] ma | Gate-Emitter Cut-off Voltage I¢=60mA, VcR=5V [ 5.0 | 70; 80] v_ | Collector-Emitter Saturation Voltage | VOR (sat) [IC=600A, Van=15V | — | 2.10] 2.70] V_ | ; VoE=10V, VGn=0 Turn-on Delay Time Inductive Load | — | 020] — | Voo=anov = [= | 025[ — | switching 1s I¢=600A b= [0.60] —_] witching Time rrura-off Delay Time Von=t15v = [= | oa] oan] “* Fall Time Rg=130 [= [roas| 030 Forward Valtage Tp=000K, Von=0 | — | 280] 3.00] v_ , Ip=600A, VGE=—10V Reverse Recovery Time ter di/dt=800A / ys 0.08} 0.15] us . [transistor Stage | — | — [O07], (Note 1) Switching Time Test Circuit & Timing Chart VGE 1 Rg 90% -Vor ' j Io Eb Voc Io ti ty 1 -¥90% NK :90% VCE H i ft a VoE 10%—-fbi0o% _10%--#! 10% ° ae | mt td (off)! | td(on)! tri | a rit | toff | 1 ton | 9997-03-03 2/6

OUTLINE : TOSHIBA 2-109E1A Unit in mm OCS SSR of KS ¢ (POE? | NEEEEE le | Heb attest Ts 5 = = 80+08 930.3 108+0.8 29408 198408" 188408 22.5408 2 ee <<< 4997-03-03 3/6

3 Te=25°C 3

2 Lif ee ee

| ee EE LF | Ti | tt oL AT TT) _. 0 2 4 6 8 10 0 2 4 6 8 70 COLLECTOR-EMITTER VOLTAGE Vcf (V) COLLECTOR-EMITTER VOLTAGE Veg (V) Ic - VCE VCE — VGE 1280; S 16) , ELE Tey TT = | comoxenorme | [TTT TT] pe - peewee - | tt tye | 2 LETT TT IEE TT 5 tf; a 2 wt | IY e | e LITT Atty E Lt TT [bee | | 2 y E eT oo Ae es tit TTT Ty 3 320 4 4 v z Yp\\ | cowsos sxrren e Lit Ty | ee LL || tones ce t) —al 8 oo 0 1 2 3 7 5 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE Veg (V) GATE-EMITTER VOLTAGE VgE (V) _ Vcr — VGE ~ Vcr - VGE S 6 S16 8 8 EMITTER pee ifs =f reves | TTT TT |

2 CTA zl

Ft LT Uy pf | efi tT tit Ty $ Lt g 2 8 “4 2 8 Fs g Ee Litt Tite yt Ty e LiL TT Ty yey ttt ty ee FA & $ 4 H_\\! 8 4 \\ | ge LLL TT ARES e {|| / | UePer

2 LL TT | I fcetna] 7] 2 Ll TIT

1¢=240A 8 0 c 8 ool c [ [| 0 4 8 12 16 20 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) 1997-03-03 4/6

Ic - VGE . VcE, VGE — 9G 1280) Es 400) 16 common nnnren | | gl | || e EL Yi |Z J s 2 _ oS VcE=0- Sg foe ine eg PPA A, eee) in an ee ee eee 5 i 5 =~, Sg Bt eee TT | g | A A7_SS § Dp 640) | 8 200) i 7 "200. 8 = ge Li Tl ia E LVL | Set Tye eee) eee Et LAL | | commos mame | E 3 320 7 fp 8 100-—H RL=050. 4 2g a Lit TT yA a VANGEE=: z LP TTY TT 2 7 SSE TT, ¢ A Ly 8 V SL 0 0 4 8 12 16 20 0 400 800 1200 1600 2000 GATE-EMITTER VOLTAGE VgE (V) CHARGE Qg (nC) ton, td (on), tr — Ic SS 4 ton» ton) tr ~ RG 2) SS SSeS . common | | TIT |_| & on zg EMITTER [iii oer jo } Voo=300V y = Cope ere Tei * Woc=300¥, | iB 2 a LOI eee 3 recall Pee AS] ESS aa W § es ee | pull 2 He ea eres ee as are 2 ton = oat oO ee ee | I D> 77 | Zz pr Z| COMMON EMITTER io] 0.3 t a

2 Ege ema zB (RSSeeorr TT

en ae F — Bont et | Ree ee z — teas 50 100 300 500 1000 1 3 5 10 COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg «) ti te — I off, td (off) tf — TC ; toff ta (oft t - Ra e LUI TU Ly) tT eegsee I & 1 a = Voc=300V Lt a tt > Aa SS = | Vor=t1sv I * off =| | g to=6004 ‘fl S —— = 1 Z € jana meal Fh 2 oD 20m |

5 Tl Cise | ee -Y 2

Ff eT | & [CESS 2 oO | 2ST si Ey SEA common eMirrer 5 a le E —— texas Fj Voo=800y 2 ese z aR: Te= 125°C 4 Ree aa, a oa Tn ETE 125°C 100 300500 1000 1 75 COLLECTOR CURRENT Ig (A) GATE RESISTANCE Rg «) 1997-03-03 5/6

vom Ip - VF zo tre, Ter — TF rrLILIy » “—LLLETATL 2 peer | gs EE Ie | ze = 50 a Pitty 7A tt 2 SSS SSS to LIZ ee 2 a L, 22 fp 2° T11 V7 LLL i ee =| 1 a To=125°C % A 16 24 3.2 4.0 a Ce 600 800 FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip (A) C — VCE (0000 SS ee Rthip) — tw SS al g ' aay swoon 2 | wo EEE | “HINT «© | Sac 2 ee Tt CPt EH 00 Se ea mension svace 300] VGE=0 a f=1Mrte po omreee a a too 2e=2°C oot 10 10 1 10 0.3 1 3 10 30 100 300 PULSE WIDTH ty () COLLECTOR-EMITTER VOLTAGE Vcg (V) SAFE OPERATING AREA REVERSE BIAS SOA som omen woeseo = TTT TTT | A 2 preeorot ems = LEE]

5 ENT ‘ie

Z er eee eee eee Z PPP PrP ery ry | a cae (OQ ee SE S| iene VOT WII So LEE

8 SERATED INEALY = GE 8 ysvoo 1 TT LT LLL I

pL_TEMPERATURE EN oL_Re=130 LETT TTT yy COLLECTOR-EMITTER VOLTAGE Vcf (V) COLLECTOR-EMITTER VOLTAGE Veg (V) 1997-03-03 6/6

Product Information

MG600 specifications and overview.

Summary

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Description

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Source title MG600 Datasheet(PDF) - Toshiba Semiconductor

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