MG50Q6ES40 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. M5 MS A=O5540.3 a oe — @o | | lelWt-~— TOLERANCE 18 fa] | Sait _ 40.5 mm UNLESS @ The Electrodes are Isolated from Case. y @ i OTHERWISE NOTED, eo EO ay Ey may eal aaa @ 6IGBTs are Built Into 1 Package. Rey cy ok 4S | g Enh Mod: area SIEEGh Ne @ = Enhancement-Mode a OH TOOL ea | e@ Low Saturation Voltage we |S fe ‘ ——o H 4 —Fast-on-Ta : VCE (sat) =4.0V (Max.) ee \\_12-Fa st on-Tab #110 @ High Speed : tf=0.5~s (Max.) 8040.3, 9440.8 7440.6 4545 45 45 SI IEGIE hath ae I~ ech 3 a a5 JEDEC _ TOSHIBA 2-94B1A Weight : 690g EQUIVALENT CIRCUIT +0 Oo + GU o GV o GW o (BU) (BV) (BW) ue rs ee EV © ov EW OW GX o GYo GZ o (BX) (BY) (BZ) EX o EY o EZ o -—o Oo - Q61001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or ‘all due to their inherent electrical Sensitivity and vulnerability to physical Stress. is the responsibilty of the buyer, when lang TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing. your designs, please ensure that TOSHIBA. products are, used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibilty is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property -or other rights of the third parties which may result from Its use. NO license’ Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/5

MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Collector-Emitter Voltage Gate- Emitter Voltage Vars Collector Power Dissipation (Te=25°C) Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 2500 (AC 1 minute) Serew Torque (Terminal/ Mounting) [| — | 2/3 | Nm | ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Von=+20v, von=0 | — | — | +10] 2a | Collector Cut-off Current Ices _| Vor=1200V, Vgn=0 | — | — | 10[ ma | Gate-Emitter Cut-off Voltage To=50mA, Von=5V | so| — | eo[ v | Collector-Emitter _ _ Input Capacitance Vor=10V, VGE=0,f=1MHz| — | 6000] — | pF | | — | 03] 06 | [Turn-on Time| ton | s [| o| Switching Time P20" Time! _ton 15V 240 s [=| oa] 08 | 1s Fall Time ot] | — | 02] 05 | - soov | — | os] 15 | Forward Voltage Tp=50A, VoE=0 | = | 20] 25] v | . Ip=50A, VGR=—10V Reverse Recovery Time ter /dt=100A oa 0.25| 05] us , Panis = P= fon Thermal Resistance Rth(-<) c/w [dios T= | | 10 | 1997-03-03 2/5

100; Ic - VCE i VCE - VGE coms \\F| | | 1 2 ‘Toor | TTT 11d z EMITTER Sil [ | | | 2 EMITTER Pee as ee Z - Sckcet TTT ne oe 5 tee ET 5 ne) Aes a 4 Se ee im en! Aaa PL 8 ew El na corre LI COLLECTOR-EMITTER VOLTAGE Veg (V) GATE-EMITTER VOLTAGE VgE (V) a VCE - VGE _ VCE - VGE ee ee ee eee

2 EMITTER, 2 EMITTER

eer UT | os ELE UT ee a 3 & 3 PTT LTT eg ELEN ET f \\ : N BT er EE ETT kee | a 4 S | = za 4 S —— Es Seer eT] CERES é HERS E or 5 g GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) s00 Ic - VGE 1900 Vcr, VGE - QG 20 TT 77 TT BE A ZY eonnros ; 2-4 | | tt iat tt ae [7 | mem |, 8 PEE AY ee ee) 2 ota | | | | = z ae see 2 Fee fT E ° . et <a ee 3 COA as Pea, * 0 4 8 12 16 20 0 100 200 300 400 500 608 GATE-EMITTER VOLTAGE VgE (V) CHARGE Qg (nC) 1997-03-03 3/5

SWITCHING TIME - Ic 5 SWITCHING TIME —Rg a a a oor Sr COMMON EMITTER 4 COMMON EMITTER ct g Ue r9r Se 2 Se ea —— = = ; a ae ae | 2 Se a a a | g SSE re ae ae 2 ot Nee rr Qe “LTT eee | ° oe ee tm SS sos EE tJ a) 10 20 30 40 50 “1 35 #10 30 50 100 300 COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg (f) Ip - VF 2 0 ter, Irr — IF 100) ea aes Ss ee rt 4 Sa 2 ogtt it mt tt ty Be ERS » EL? tim TT tt pe FCO pccopeee Be Lec tel EEE é JPET) WSS oa a 8 8 of eee é ae nwo} | 11 | Be TTT common canuone 2 | _ /y |__| commos PLL | auantoonn BTL] camone 88 of tt tt | vop--s0v VGE=0V cy _ 1 Ly | i | i ae FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip (A) C - VcE Rth(t) — tw sort Tmt nr oom ‘os Eel ee | || | gf sal eg 7h B 3 eo Ho 2 LUI otone srace & 309 fom | 2 TIT § (ewer FSS ea a SA aa ©) Vop-ov HSS Pye eect eee eat et 30} t=ime2 = AT HT 2 pc | ee TTI TTT ogy, LIM TIT TUTTE ETT 0.03 01 0.8 1 3 10 30100 = 10°? 10+ 1 10 COLLECTOR-EMITTER VOLTAGE Vcg (V) PULSE WIDTH ty (s) 1997-03-03 4/5

SAFE OPERATING AREA REVERSE BIAS SOA

30 TT oe 300 OOOO)

a | | Pa got noo caemceutsen se IT TL 2 gE EEE SE 50} . IN AON Se d a Z 2 == = SS SS SS SES x sincue \\ fe AT TINS a geome NU NUT) EERE B l2uteS wun REE NES === ==========— 2 oezpeame’ FiNoc omanott __..-----—-== | TEMPERATURE. en ocd Ro=ae ES SSS | 1 3 10 30 100 = 300 1000 3000 aa’) 200 400 600 800 ©1000-1200 = 1400 COLLECTOR-EMITTER VOLTAGE Veg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) TTT ¥997-03-03 5/5