MG50Q2YS40 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. B2 _4-FAST-ON-TAB #110 @ High Input Impedance ~3=MS 2) 2-$56+03 © High Speed : tp=0.5s(Max.) =] [ol feel 2 é = LOM Fr CPT te =0. Max. — = 3 ten =0.5/8 (Max) ais lisa Se ¢ Low Saturation Voltage TT \\~ [estos [estos PY ee : VOK(sat) =4-0V (Max.) | BAPAN _sox03 a) 4 935405 e Enhancement-Mode a — e Includes a Complete Half Bridge in One Package. = a Fifer of pes © The Electrodes are Isolated from Case. .| EQUIVALENT CIRCUIT “| s bal rE 2 ___91t05 [ssados. imi C1 E2 JEDEC ad TOSHIBA 2-94D1A Gl E1/C2 G2 Weight : 202g (B1) (B2) MAXIMUM RATINGS (Ta = 25°C) Collector-Emitter Voltage Voss | 200 | Gate-Bmitter Voltage Vors Pec fiw | Collector Current c ic A Forward Current [oc [| mw | so Collector Power Dissipation (Te=25°C) Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 2500(AC 1 minute) Serew Torque (Terminal /Mounting) Pe ss | Q61001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or ‘all due to their inherent electrical Sensitivity and vulnerability to physical Stress. is the responsibilty of the buyer, when lang TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your, designs, please ensure that TOSHIBA. products are, used within specified Operating. ranges as set forth in the most recom products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. © The information contained herein is presented only as a guide for the applications of our products. No. responsibility is assumed by TOSHIBA CORPORATION for any Infringements of intellectual property or other rignts of the third parties Which may result from Its use. NO license Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL | ‘TEST CONDITION Gate Leakage Current Ioes__| Von=+20V, Vcn=0 | — | — [+10| pa | Collector Cut-off Current Ices _| Von=1200v, vgn=0 | — | — | 10]| ma | Gate-Emitter Cut-off Voltage _|Vamorr)| Ic=50mA, Vor=5V | _3.0| — | 60[ v | Collector-Emitter eet [venw [emer [| vf wf +] . . VcE=10V, Vgr=0, Input Capacitance Cies pace 6000 pF | — | oa] 06 | ‘all Time tf _15V soov | — | os] 13 | Forward Voltage Ip=50A, VGp=0 | — | 20] 25] v | . Ip=50A, VGE= —10V Reverse Recovery Time ter ai/at=1008 os 0.25 ys Thermal Resistance Rth(-c) ransistor | — {| — | 0.3 °C/W [Diode | | 0 J 1997-03-03 2/5

~ EMITTER eo 2 EMITTER 2 89 t= 25°C U/| AT =-T- “To] 8 Bape Te=—40°C : Sanaa ee » COTM TTT

2 COOP CPS g

eof | Pe BTL EEN com ieee op Ue OSES OE Ger a> 4 2 | COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE-EMITTER VOLTAGE VgE (V) s 4 VCE - VGE 5 4 VCE - VGE ~ COMMON ~ COMMON e LLEL TT | J conc s LLLTT TL] cece e | | UT ef LU | TOCA COI ° ° - q z Nop te=t00a Bt UN em | EB PTA Na es i{ || eRe LUNES E E PC PUPP TTT Ty] 8 % 4 8 12 16 20 8 % 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VGE (V) - VCE, Vi -— Q aaee ar E™ TTT 5 re Ff Chem PY oe tee Lo ZC 8 oe a 2 | LI7ZLLE LL, 8 60} 3 600} 7 12 é EA fee eT TPT TTT § ee Co Eo LAY TTT PEELE oF ARSE : FI 20} | Col 8 olf AS "400 Cae i ee n/n : Tk 20 Iayetan f LOA Ee A\\ Se 2 % 4 8 12 16 20 ° % 100 200 300 400 500 600 GATE-EMITTER VOLTAGE VgE (V) CHARGE Qg (nC) 7997-03-03 3/5

SWITCHING TIME ~ I¢ SWITCHING TIME ~ Rg oe COMMON EMITTER ; COMMON EMITTER Eat A [| TT | vec=6oov, ven=215v voo=soov,io-s0a |_| | IIT | zg |_| LL] Rg=240, Te=25°C 3g Von= +15V, Te=25°C way ep eb et 4 ey o—__}+ + 7+ 7 TOY 0. Co er ton wy | BEERS Ee = & AA * =a SU SE rT wir TT | | oT LU == ee | 0.08! a SS SS | 0.0) 0 % 1020 30 40 50 B51 3 5 10 80 80 100 300 COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg ()

100 Ip — VF 2 4 ter, Ir — IF

[| f 7 FFT TY cosmos 4 SS eS 2 ag LL ML | cxmnone 2 =e =z so g ee | = VGE=0V S 3} ree) bE g eco teeo eK : Lifer ES 86 of e “TAP s . [yt | | i | EA COMMON caTHODE " 2 titi. ee y/o BB of | ait t000s PAD Tk ESS vents, case FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip (A) C - Vor Rthit) — tw soo ao a, PRET SEE] pecosre owe AMEE ETT 9 SSREe seg 2 | SSS SS SSS Zz si 8000 é A Sere =o LU See 300} = 7 tT Le 2 seq common LMM CLI eel ee gr ec é i tt Hit | WCoes I E == aS aa z eMirreR PRS SSS s | Ae SE ferme § COOP ore eee TTI TTT HT sone LLU TIT TUTTI TET Sos on 08.1 ~+8 10 80 100 IF 10 107 1 10 COLLECTOR-EMITTER VOLTAGE Veg (V) PULSE WIDTH ty (s) 1997-03-03 4/5

SAFE OPERATING AREA REVERSE BIAS SOA [rowaxcurseo | Ill | [fill | vl 09 piC MAX, PULSED) 3 > oe | ONT ogy NNO I 2° See eee eee aS Sor 2 SEEEEEEEEEEENEH = od N 4 WI . 4 [TTI [tes (ae SS SS SS SS SS SSS \\l NY ———

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Bo Poise EET NG 5 B= SSSSSSS—| SB deaTS Sor me | RC OPERATIONNTTT | Bost qsaec FRE 8 “|psrare uinearcy [NII | TUTE TI S Sl vopstiv © WITH INCREASE IN \\ ) © oa] Ro=240 pif ||) {ft || 1 3.5 10 30 50 100 3005001000 3000 0.055 200 400 600 800 =©1000 1200 1400 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-03-03 5/5