MG50Q1BS11 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 53405 S-M4 e High Input Impedance | © High Speed : tp=1.0ps (Max.) n(n ails 3 . oT ere 3f § © Low Saturation Voltage: VCK(sat) = 2-7V (Max.) ia A Bf? ag i TY al 2, @ Enhancement-Mode = q Gb2+0.3 g © The Electrodes are Isolated from Case. 29405 33+05 Ss RPL 05 3 8 a a EQUIVALENT CIRCUIT co g qa) bose G@)o—l E JEDEC = TOSHIBA 2-33D1A Weight : 90g MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Collector-Emitter Voltage Vors 1200 Gate-Bmitter Voltage Vors Collector Current c A Collector Power Dissipation (Te=25°C) Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 2500(AC 1 Minute) Screw Torque(Terminal/Mounting) | —- [2/3 | N-m | 2610016402 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury. or damage to property. In developing your designs, please ensure. that TOSHIBA. products are used within specified Operating, ranges as 4at forth in the most recent products spectications. Also, please Keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for ary Infringements of intellect propertyor other rights Gf tne third parvies wich may resui from Ms use. NO. Ncense’s granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/4

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current VoE= +20V, VoR=0 | — | — | +500 Vou=1200v, Von=0 | — | — | 10] ma | Collector-Emitter Voltage Vors__|Ic=imA,VGE=0 Note1 | 1200/ — | — | v | Collector-Emitter _ _ Saturation Voltage Vor(sat) | IC=50A, VGE=15V | - | 23| 27] V Input Capacitance VcE=10V, VgE=0, f=1MHz | — | 7800 | — | oF | oan = L= | os] os Switching oT oo a [=| oa] 08] witching Time 0 4 ys Fall Time -1v 7 | — | o6] 10] ‘Thermal Resistance | Rugo [= = = Tt [soe | Note 1 : Do not apply the over rating voltage. 1997-03-03 2/4

100; Ic - VCE 5 6 VCE - VGE oN a Lee 3 PETA an /2aSeeee eee en ASE BE CCCOMEEL rs iy 2 g eS Z ee Coen a BS Sees eee? (Sane HH Np PArrPrirrry & fi piper COLLECTOR-EMITTER VOLTAGE Veg (V) GATE-EMITER VOLTAGE VgE (V) a Vcr - VGE S16 VcE - VGE A Pt Ty Py ze | | E LOT TTT FCCPT Z PtH cian é ft hein ft oe i | | 0 4 8 12 16 20 0 4 8 12 16 20 GATE-EMITER VOLTAGE VgE (V) GATE-EMITER VOLTAGE Vgg (V)

100 Ic - VGE S20 VCE; VGE — QG x0

Sod vou=sv gut |i I|YIA I. & : HEE 8 pel e tlt a 2 = : e “COO E wo | LAL. : 7 eRgeeees Gene ER mm COCO : eR E Pt ye Ne tai fe BTCC] BANS oy CA ANG 2 0 2 4 6 8 10 12 14 0 100 200 300 400 50 GATE-EMITER VOLTAGE Vgg (V) CHARGE Qg (nC) 8997-03-03 3/4

16 SWITCHING TIME - Ic SWITCHING TIME - Rg

=== COMMON EMITTER 20 (AHR HE) Vooneer noma wf somone | TUTTE | [oT yy) vge=+15v, Te=25°C Vop=+15V = $ +44 3 4 sgcson Sections ECC c= Foti 4 LPT per gf Ten26r0 Ce oe seeeeeeeneee © CMe BESS SSeS 2 Lee of EEE SS ae ee of ton 0.3) — oo iy ae og} Pee TH |e err Lert TI Lem ETT] 0 10 20 30 40 50 60 70 “1 3 10 30 100 300 COLLECTORCURRENT Ic (A) GATE RESISTANCE Rg (9) C-Vor ‘o Rtn) — tw

5000 SSS

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0.03 Ol 08 1 3 10 30 100 10-8 10-2 10-1 1 10

COLLECTOR-EMITTER VOLTAGE Vcg (V) PULSE WIDTH tw (s) SAFE OPERATING AREA REVERSE BIAS SOA 300 srry , lout ete THE CTH (| ve EEE 28 ig MAX SSeS Ft oRg= 2 a CoNTIRUOUD==-ARE NS so | a Bod HR KARE Bop a sano \\\\ foe 00.8 YH == SSS SSS SS5====— Nonnsventmv®\\ opeeanos\\) DN _| | FPP bed PVE be ge 19 PULSE Ten 26%0 Neer NCS] a 5 4 CURVES Must RSA & (=== =====—S—rSs== {kta EPA] =) MEER REE

8 INCREASE IN LUNI Pe | 8 PEPE ELLE]

31 80 100 300 1000 3000 90% ~~g00 400 600 800 1000 1200 1400 1600 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Veg (V) 1997-03-03 4/4