MG50J1BS11 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 8.0+0.5, 8.00.5 wf High Input Imped: = e i input edance So resin ra, g “ea a | aS © High Speed : tp=1.0/0s (Max.) (Ig =50A) Suite ¢ Ella FE igh Spi tp= 1.044 Ic . che eee F ¢ Low Saturation Voltage : VoR(sat)=2-7V (Max.) (I¢=50A) % | 3] | ¢ Enhancement-Mode S| esos 3 @ The Electrodes are Isolated from Case. 53.0403 34.64 0.4 EQUIVALENT CIRCUIT c a 5 cod go q (B) a E JEDEC - TOSHIBA —_2-33F1A Weight : 86g MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Gate-Emitter Voltage Vors Jvc [we | 0 | Collector Current c A Collector Power Dissipation Junction Temperature Storage Temperature Range ma0~185 Isolation Voltage 2500 (AC 1 Minute) Screw Torque(Terminal/ Mounting) [| — | 2/3 | Nm | 610916442 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss Of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating rarer as fot forth in the toe raceme products specticntione. alse, Pleads Leap in mind the praceuticns snd’ condivons see torte in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibility js, assumed by, TOSHIBA CORPORATION for ary Infringements of intellect propertyor other rights Gf tne third parvies wich may resui from Ms use. NO. Ncense’s granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/4

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Van= +20V, Von=0 | — | — [+600] na | Collector Cut-off Current ICES Vop=600V, VoR=0 [ — | — | 10] ma | Gate-Emitter Cut-off Voltage Ig=50mA, Von=5V [ 30] — | eo] v | Collector-Emitter Input Capacitance VcE=10V, Vog=0, f=1MHz | — | 3500 | — | pF | |= | os] 08] 510 sv pp omwtK #8 [— | oa] 10] Switching Time Ihr us Fall Time ~16v |= | 06] 10] Thermal Resistance [Rago = = | 088 feo] 1997-03-03 2/4

160 S 6

[Ff J conor: snr = | common | [TET] | |] | ~ | | | i [| Te=25°C S EMITTER LTE Et | 2 120 wg 12 Te 40°C » LL {asl fel |] | | Z CTE Ey et Ive s {it TE TL on) Zee eT AA Fs A 10 E on Ane | Pye | Eee LIA = L || cr 7] DE SC g gitemTTirry COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE-EMITTER VOLTAGE VgE (V) VCE - VGE VCE - VGE Ss 16 s 16 ee ee | | comos | {TIT TT TT I S fswee | TT | Tt | Spammer UT | g “ee CFE g “pees TIE] 3 8 g g s fit Tey yt se titi yy | eA E FEA E E ptt yo Ete SY ef | USEF ES ge Li] UNS}

2 Li [TTT] 2 tl DPT Tr

8 % 4 8 12 16 20 8 5 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) Ic — VGE VCE, VGE — QG 160, > . fl] 7.) COMMON EMITTER < ‘400 corwon ane S see a cc Fl eon | vor 1/7] 1 |g » LLL TT Bape | YA | Paz of A eae: B 8 ey z oot. MEE 300 tt i, g PEA ERECT : PH LAL ew

3 Seep 2Geeee e AE Tt ey es

LA gs VSS & GATE-EMITTER VOLTAGE Vgg (V) CHARGE Qg (nC) 1997-03-03 3/4

SWITCHING TIME - Ic SWITCHING TIME — RG 1 ro 3 SSS SSa= Lie _ JS 2 ee |_| Titer | oS 03 Da aa 2 aT 2 ee

5 LAAT common enmrrer 5 nicl COMMON EMIFTER

Ol 4 GE= fF — Fs Vge=+15v Se tee cof FH See te= tem: oot Lf P| 8 009] ar ae io COLLECTOR CURRENT Ig (A) GATE RESISTANCE Rg «)

10000 Cc — VcE 10, Rth(t) — tw

ot Ne HHH é PRBS BN WE SE rd ee | 2 500| SSH cot Ze eT nA Bm) common ECTS Se HT ees A 3 of vere NOU So rime FS 5 Leer sa tesese ESS & yo-a LUTIM TUTTI CU TTT 05 1 3 10 30 100 300 1000 10 10 10-* 1 10 COLLECTOR-EMITTER VOLTAGE Vcg (V) PULSE WIDTH tw (8) REVERSE BIAS SOA

300 SAFE OPERATING AREA 800 OOOO _LUEL$T

2 gfte Maxconmvous) S=ARH NS 2 eee eo gw ELT Nifoe oremanon Si g lee 2 % SINGLE Te III = B10) onrePeritive NSE S a CURVES MUST BE ‘ ul = —— — — = = 3) perareo uneanny - NYE TM Boo) Ge ey GEESE SEES °§5-—a 310-30 100 3001000 0.0% —00 300-300 400-500 600700 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-03-03 4/4