MG500Q1US1 TOSHIBA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 2-M4 2-M6 4-065 40.3 m @| © High Input Impedance 4 ig ig SEE 3 + 3S) e i : tre aiey) | j= High Speed : t¢=0.5/s Max.) 2) amc aye Ke ter = 0.58 (Max.) patod [29+05 2040: e@ Low Saturation Voltage 30408 Vi =4,0V (Max. 93403 CE (sat) ce ) 708208 © Enhancement Mode 3920.5 340.5 10405 5420.8 © The Electrodes are Isolated from Case. = 3 se Fr == EB EQUIVALENT CIRCUIT at) Pots 6008 Cc E JEDEC = 8) TOSHIBA 2-109A4A Weight : 465g MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Gate- Emitter Voltage Vans ee Collector Current ic A 1000 Forward Current c E 5 A [ims [| tem [1000 | Collector Power Dissipation Pi WwW (Te=25°C) | ro | amo | Ww | Storage Temperature Range —40~125 + 2500 Tsolation Voltage Screw Torque (Terminal : M4/M6/ 2/3/8 Nm Mounting) 2610016402 maifunction or fall due to their inherent electrical sensitvity and vulnerability to physical stress. Ie is the responsibilty of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-03-03 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION | xa. | rye. [wax. [unr] Gate Leakage Current Van= +20V, Vor=0 | — | — [+500] na | Collector Cut-off Current Icrs _| VcE=1200V, Vqn=0 | — | — | 40[ ma | Gate-Emitter Cut-off Voltage Ig=500mA, VoR=5V [ 30 | — | 60] v | Collector-Emitter _ _ Saturation Voltage VCE (sat) | 1C=500A, VgE=15V | — | 20] 40] Vv Input Capacitance Vcr=10V, Vqr=0, f=1MHz| — [80000] — | pr | Switching wvpp oe TS [=] oat os] | — | os] 15] Ip=500A, V@R=0 |= | — | sof v | . Ip=500A, V@p=—10V Reverse Recovery Time ter di/dt=300A / ps 0.25) 0.5) ps Thermal Resistance Rth G-) —_ | — | = | °C/W [Diode ST = | = J 020 | Q61001EAA2’ (@ The information contained herein s presented only as 9 guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted By implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others © The information contained herein is subject to change without notice 1997-03-03 2/5

1000, Ic — VCE Ss 16 VCE - VGE Ee saaeee >» -LEUIVT eee . : Fg eevee Yip ae) Pda pany FALL | ecw S He HE Coe es |) é en)|/.e2S=>= ett tity es | oe oe ee eee Cee po ESE Co SSS o> 4ane Conn ee ee °% 7 4 6 8 10 8 % 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VcE (V) GATE-EMITTER VOLTAGE VgE (V) ~ VCE - VGE ~ VCE - VGE =» LLCO ae > LOO ae

8 EMITTER 8 EMITTER

PLE | ease LTTE TE] nee

2 LPP TT 2 LE TT

BE COPIA TT BT Vereee[ SLL TL ello cimo | eof tite SEE , eo eros i oo e [| Me e Lee

2 LLET TTT TTT g LLILT ITT itt

% 4 8 12 16 20 % 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) 1000, to ~ Vor = 1000 Vor, Vaz ~ ac 20 —comos LITT = comormumee | | 2 1X] s = yf meme TT TTT TTT 8 g| Berta ZAK s g Cae g | ewe ZZ * eo LETTE Te wt ttlIZI7Zt eh, 3

2 CCOCC AT eZ

2 a LE Ew LAA TT, = e COO | —~ Gee: eee) Saeeeee 2 A Yo |, e ces nee oe) Zane (000007 /Geeeeee 2 Poo 0 2 4 6 8 10 12 14 0 1000 2000 3000 4000 5000 GATE-EMITTER VOLTAGE Vgg (V) CHARGE Qg (nC) 1997-03-03 3/5

SWITCHING TIME - Ic SWITCHING TIME — RG 3 10F SS es ee ===. ——— ~ | Let fel TT TT | ee | ERE q —— SS ST SS q 8) re=a5ec Ete 7 eS a a = Sie EB a ae E |

2 Leer 2 pe

2 oa i Zon oo — +4 BL eT er Te | BEE th 5 | COMMON EMITTER . "4 Cee i ® LET | | tere oe ee ee vap eee} fe oot 1 Te=20re oof ES oF 100 200 300 400 500 85 05 1 3 5 10 30 COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg (9) vom Ip - VF 2 tre, Ire — IF 2 sos Lit tm | ee Vor=-10V » LELET TET ay ae a Soe Be Re eg LETT TET Tay ze fit ett

2 TTT TT AAT Be |

2 no | | ZA «1 1 ge or "HEPA B

0 DS 2 10

0 1 2 3 4 0 100 200 300 400 500 FORWARD VOLTAGE Vp (V) ™ FORWARD CURRENT Ip (A) C - VCE Rth(t) — tw eT ; ‘ee AA coon SENT ET | ee eee | ict FEHR Po ies, es | | ao a | | | co see0e TT CTI ETE eg 8 soot TN ge aT ote sce 80) oumon ewirrer LAS | 2 TTT Ceri teassastor stace soul Yo8=® LN cos a ee 030.5 1 3 5 10 30 50 100 300 oss 10°? 10° 1 10 COLLECTOR-EMITTER VOLTAGE Vcg (V) PULSE WIDTH ty (s) 1997-03-03 4/5

SAFE OPERATING AREA REVERSE BIAS SOA 3000, 3000, 0 a SS fica ruse = HE THE SaeeSSSeeeeeee 2 1000 Ee UL 1000 5 wn eoteittt \\ LL NTE ee 8 3 aS NEA 2 TrFrriritTftf{ftfene ey 5 [pe operation HTN 4 NN ee

30 DC OPERATION YEE Nee 2 SS SSS

gid ee epermve NII Nu | 8 ee ee ee PULSE Te=25°C EAH ‘Tys125°C 3 5 /ourves must pe NN BO vga SS SSS SSS 8 s|peratep uneamy NOSE 3 05) Raa SS WITH INCREASE IN N 0.3 a | iLtemperature. [IK [TTT TY oe 1 3 10 30 100 = 300 1000 3000 “0 200 = 400 600 800 1000 1200 1400 COLLECTOR-EMITTER VOLTAGE VcE (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-03-03 5/5