MG400Q1US41 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. am ZoMS /4-O85403 © High Input Impedance 2 ligt —_ tell Ale IEEE sie 6 “ © High Speed : tp=0.5s (Max.) EN 13H el oe ° trr=0.5/ (Max.) a er @ Low Saturation Voltage : VCE(sat)=4.0V 200. (Max) 80+08 aX. 9340.3 e@ Enhancement-Mode 108t 08 3940.5 30.5 1040.5 $4408 @ The Electrodes are Isolated from Case. = Ct fh 4 EQUIVALENT CIRCUIT By = I ey Lt) a i ; qt aT : 106+0.8 a i 60+08 c E JEDEC _ TOSHIBA 2-109A4A ) Weight : 465g MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Collector-Emitter Voltage Vors 1200 Gate-Emitter Voltage Vous To eC Collector Current A | ims | top | 800 ee Forward Current DE E A Collector Power Dissipation (Te=25°C) 2400 Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 2500 (AC 1 minute) Screw Torque (Terminal : M4/M6/ Mounting) [ - | 2/3/38 2610016442 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical sensiity and vulnerability to physical stress. isthe responsibilty of the buyer, when utiizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the. precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsiblity is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property-or other rights oF the third parties Winch may result from Its use. NO license Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Van= +20V, Vor=0 | — | = | #40] xa | Collector Cut-off Current Ices _|VcR=1200V, Von=0 | — | — | 4] ma] Gate-Emitter Cut-off Voltage _|VGR(OFF) |Io=400mA, VoR=5V [ 30] — | eo] v | Collector-Emitter Stearn fom vc | ~ | of ov Input Capacitance VcE=10V, VGE=0, f=1MHz | — | 48000 | — | oF | = [=] af 06] vtehing Ti BY. tm 72 [= | oa] oa] Switching Time 0 a ss Fall Time -15V | — | 02] 05 | Forward Voltage pve fo of 8.0] . Ip=400A, Vog=—10V Reverse Recovery Time ter di/dt=300A /ps 0.25 0.5) us [transistor | — | — [0.052 Thermal Resistance Rth(-c) ~ C/W [piewe OT = | [| 1997-03-03 2/5

Ic — VCE VCE - VGE 800) Ss 1 Jt ae | s fame tT tt td | ee soe} og ee GL hese Fe LETT TT ee ees ee eee ee Ae ee ee | a 5 a EP eee ee eee A AT tT i tT tT TT 8 | COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE-EMITTER VOLTAGE VgE (V) VCE - VGE VCE - VGE Ss 1y Ss 1y e fom tt TT tT) os fom LTT TTT]

8 EMITTER: s EMITTER

eee Ti Et) og peer TY 2 4 2 8 § § | £ $ N leo E PL LN tec PLL eet @ a et | Mees LU eS : : PU CE 8 ol 8 ol 0 4 8 12 16 20 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) soo Ic — Vor S 1000 Vor, Var - Qa 0 SERRE. > HEU AA wee] « oe i 5 ef LL IA VET TTT, 8 2 ot | tia | tt 2 TT VTA TTT TTT “TTT TTT) E ol AR Bonde | gS HHH § vy pa) RRS Pert (Ree % 4 ry 12 16 20 ° ~~ e00« 1600 2400-8200 4000 ~—4800 GATE-EMITTER VOLTAGE Vgg (V) CHARGE Qg (nC) 1997-03-03 3/5

SWITCHING TIME - Ic SWITCHING TIME - RG Ty 19 —— ass COMMON EMITTER COMMON EMITTER (—)——h — . rary al Vor=tisv Po s (Ss ges a2 : ESS]. eS § A Hal 2 E i a E Se ee a

2 Sot 2 ia

= a a aig Et ee Ay A, ee 8 A ee ] font - UM Tee * [Toe cae SSS Hef fe

05 A cog EE

ory Cr eT a Bs 1 3 «5 1090 60 100 300 COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg () Ip - VF > ter, Inr — IF 800) S100 Lt yt ee e FeRRREREREER EEE = 2 s+ fof a = 600 en128% Bo ESE eT] pee Td e, -LEE eet) og LO dil & 5 ] BE See ef | ff | | SSeS ee |B yma ESE ZB 200 3 a] CATHODE fT errr yr yyy caTnopE Be | von--0v PA | vcanen ee Lew | IY I | % 1 2 3 4 SS ‘0 80 100 150 900 250 900 950 400 FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip (A) C — VCE Rthit) — tw sooo TTT 1 Tm 1 Trim 111m) aes LS = Saal sooo Re meee ennai ena memati ee a 2 SC eI

3 Sea LLU EIT TCT LUT

° HICH SCT 2s of foal ons (HTS primal 2 sooo tt Aon Zo ot LU eT TT 5 00 ecenenesenees UIT Tas a3 ool ett | yD uIEP fon teat == a Te=25°C PH Esser ool ics 0s ee [cc S|

1 L UAT TTT cee EH Ht Er EH

‘Bos 01 08 1 Ey 10 30-100 “107% 10°? 1077 1 10 COLLECTOR-EMITTER VOLTAGE Vcg (V) PULSE WIDTH ty (s) 1997-03-03 4/5

SAFE OPERATING AREA REVERSE BIAS SOA soogso maxon) [lll [LTT 1 ==========-——— e MPiinymom Nei] ofa EEL a EE Bae 2 so:bc operation == So a ae Betti Sit NAN eee 2 “be sIncue \\ HHT o oS g nonreperimve\\| |/[/|] | | NVI || g ee | 10) PULSE Te=25°C \\ESH SSN TT TTT Tt tT tt tt yy 8 imeiscnease wy NET 8 oa] Vor=tv FR yremperatore.[{(/R TTATIMMT aL tome ET PTT 1 3 10 30 100 = 300 1000 3000 0 200 400 600 800 1000 1200 1400 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-03-03 5/5