MG360V1US41 | DigiCamel IC Datasheet

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MG360V1US41 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. EQUIVALENT CIRCUIT @ The Electrodes are Isolated from Case. Cc E e@ High Input Impedance Cc E e@ Enhancement-Mode ] © High Speed : t¢=1.5ys(Max.) (I¢=360A) rd trp = 0.68 (Max.) (Ip=360A) (B) @ Outline : TOSHIBA 2-109E1A (See page 3 for the device outline) © Weight : 590g (TYP.) MAXIMUM RATINGS (Ta = 25°C) Collector-Emitter Voltage Vcrs 1700 Gate Emitter Voltage Vors ee Collector Current c Ic A Forward Current [vc [iw [seo Collector Power Dissipation (Te=25°C) 3600 Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 4000(AC 1 min.) Screw Torque (M4/MG6/ Mounting) [ — | 2/3/38 261001 a2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or ‘all due to their inherent electrical Sensitivity and vulnerability to physical Stress. is the responsibilty of the buyer, when lang TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA. products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibilty is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property -or other rights of the third parties which may result from Its use. NO license’ Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/6

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Vor=+20V, Vcr=0 | — | — [+300 Collector Cut-off Current Ices _| Vor=1700V, Vgn=0 | — | — | 60] ma | Gate Emitter Cut-off Voltage Io=360mA, Von=5v | 40; — | 80] v | Collector-Emitter eta [ tomo sen tory [maf a . Vor=10V, Vor=0, r= [= fool — Po] - 7 Inductive Load Voo=900V |= | oa] — | Switching Ig=360A |— | of — | Prall Time Rom2.00 |= | os] 15 | (Note 1) [= [10f— | Tp=360A, Von=0 | — | a7] so} v | . Ip=860A, VgE=—15V Reverse Recovery Time tr di/dt=1000A / us (Note 1) “s Thermal Resistance RthG-c) Transistor Stage | = | — [oss °C/W Diode Stage [| — | — |o.125 Note 1 Switching Time and Reverse Recovery Time Test Circuit & Timing Chart Rg Yon 90% ~Vor Tol] L Vee Io__! i iy fl Rg 90% 90% oo Vcr UA\\ ft 9 Now lomif! ¥. 10% 10% if | \\ 10% ta(ofPi | lip td(on); a} | “TOO, 90% Ter ' toff | ! ton | Tyr 50% Ire Ip| /i tr _—__ tert 1997-03-03 2/6

OUTLINE : TOSHIBA 2-109E1A Unit in mm fie Sa) lee he © D ; se ie | Sala dd ae “We | lotltell IE ms ae tus salma i hstos laszos 28406 | 29.3412 | 1080.8 _29+08 1ssi08, j188108 225408 66t08 fo SSS | _ {er _ | EE Weight : 590g (TYP.) Tse 9857-03-03 3/6

1000; Ic = Vcr 1000; ic = Vor HEE se | [eee ™™

2 Te=25°C z 'e= 125%

eT # eT 4 g epee 5 yl LL 7 Neon |_| e ft) | VET I 600} ‘4 600} 7 es / /A ee e/a g a é WA 2 | | TOSS anne zg“ WY ms nn Zee BT E Yr ce / Ze cr Ze ee) on cd) Zo IAT ETT TT DAP COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) VCE - VGE 18 VcE - VGE of sore TET TF sige HH es ott tT TT gs ttt tI TT es eee ee ie ee | 3 3 A tit EET ET : JE ITE BE ELE Ey BE LEE TIAL ; = —_—+- Gases fae Beeeetc=-—= E wet ——— GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VGE (V) VCE - VGE 800 Ic - VGE S 18) Jett j= 400 tilt te] e wp teen ee ee ee a rd | Pecocoetie| Oe BLE ENN e-rnen_] eT | AL eee eS2e oe ee ie aa 3 i ee Pes | 8 ot | AA

2 CPP rrr yy |" LTA

GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) 1997-03-03 4/6

300 T900—1500 2000 08000150" -20 380300350

CHARGE Qg (nC) COLLECTOR CURRENT Ic (A) SWITCHING TIME — RG SWITCHING ENERGY - Ic a) ae === ae =| % | Vor=ttev TE | aa # so0]_Rge20 EEEEEEES| a SP BoE g Po ee ie a a Zz Sessa — = aee- cae ee 5 ne | Bos Seer ee 6 oo eee a aciioipeen emer Peele >eaaseeee BOSCO peer a 2 ool} Neer oie ett | BaP ET a 3 “ESS SSS SSeS] Poe PE Ey SSS aSeaaaaaaaa 1 3 5 10 30 50 0 50 100 «150 «©6200 = 250 300 = 350 GATE RESISTANCE Rg (2) COLLECTOR CURRENT Ic (A) SWITCHING ENERGY — Rg Ip - VF et | 1000) 3 “ cou fen HHH ee ee = sono! oon a 2 sop —_| 1 [| or 10) gpestisv _ aaa a [| | esc | [| fs) Sete = or -_ tis Vi |

5 CH ge 2 LLL VI7ZAZ TI

ae ter, Irr — IF REVERSE RECOVERY ENERGY - IF se ee > ee a BE |__| baer a Es 100} | eA ey) a SS SS SS | a a a 83 yo| —| 1 T_T common catHope a a a BEL | — reatas0 aisat=1000A/,5 2 a a 26 10 1 3 0 100 200 300 400 0 100 200 300 400 as FORWARD CURRENT Ip (A) FORWARD CURRENT Ip (A) C - Vor Rthit) — tw

000 SS a q a ae

30000, 2 os ~ Coo eee a % Coit oh | Ss ig et a | =| 25 00s REE tel reansister stace | 8 rook LU TT Be cost LL itiiil pst 1000 ay @ 0.03 y — 2 == == aa Be° Peril PSS | = 8 ECT & soo] common exnrren LLL I/II | ET Sos = ° Vop=ov S55 5S SS eese B 0.008 Ar in 50| VGE =a eas z 0.003 A) | | 50] f=1Mitz ERA Feecee 9 eee Coon om oor LIN LETT TTT CTT 803 T 3 10 30 100 10-° 10°? 107? 1 10 COLLECTOR-EMITTER VOLTAGE Veg (V) PULSE WIDTH ty (s) 1000 py REVERSE BIAS SOA __, ee ee ee oe

2 EEE EEE EEE

2 COC

ae === === == == = SSS SS & oe RR RRR Ree Ss 3 oe [ee RE Tys120°C gL Ra=200 | 0 200 400 600 800 1000 1200 1400 1600 1800 COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-03-03 6/6

Product Information

MG360V1US41 specifications and overview.

Summary

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Description

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Source title MG360V1US41 Datasheet(PDF) - Toshiba Semiconductor

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