MG30V2YS40 | DigiCamel IC Datasheet

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MG30V2YS40 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS B2 4-FAST-ON-TAB #110 3-M5_g\\\\ 2-85.6403 @ The Electrodes are Isolated from Case. =——— ae! High Input Impedance = la] Ce) holiest | 3 mie [ed ll ed) CS © Includes a Complete Half Bridge in One (Gar La eS Package. | \\ gatos | 2at0s | EY He [JAPAN __got0.3 qj z e@ = Enhancement-Mode 93.5405 ‘ e@ High Speed : tp=1.5us (Max.) (I¢=30A) 4205 4205 9.9108 27405 trr=0.3s (Max.) (Ip=30A) Fazos) T9203 Tei03 , 3 | - EQUIVALENT CIRCUIT Lo sites Tastes | f El E2 Cy E2 JEDEC — ] ] TOSHIBA 2-94D1A G1 E1/C2 G2 Weight : 202g (TYP.) MAXIMUM RATINGS (Ta = 25°C) Collector-Emitter Voltage VcES 1700 Gate-Emitter Voltage Vars [ve fiw | Collector Current c Ic A [ims | ip | wo Forward Current A [ims [ow [| Collector Power Dissipation (Te=25°C) Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 4000 (AC 1 min) Screw Torque (Terminal / Mounting) ee ee 7 ec 2610016402 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your, designs, please ensure that TOSHIBA. products are, used within specified Operating, ranges as 4at forth in the most recent products spectications. Also, please Keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibilty is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual propertyor other rights of the third parties fwnich may resuit from Its use. No lense is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Von=+20V, Von=0 | — | — | +60 | na | Collector Cut-off Current Ices _| Vor=1700V, Vgn=0 | — | — | 05 | ma | Gate Emitter Cutoff Voltage I¢=50mA, Von=5v [40] — | e0| v_| Collector-Emitter Sari, (roum|eomvanin [-| o fo] wae [= [owl [| - 7 Inductive Load Switching Ig=30A |— | of — | Fall ‘Time Rasa |=] os] 15 | (Note 1) L— | 10] — | Ip=80A, Veu=0 [= | s2f 45] v | Ip=30A, Vgp=—15V Reverse Recovery Time ter di /dt=500A / ys (Note 1) ” ; Transistor Stage | = | = | 025 |, Thermal Resistance Rth (-c) °C/W Diode Stage P— | — [10 | Note 1 Switching Time and Reverse Recovery Time Test Circuit & Timing Chart RG VOB og ~Vor Toll L Voc I i ty fl Rg T 90% 90% ow Vcr AN ‘ft 0 VoER 10% L | 410% 10% 4 14.10% od. tet rere ta(of | tip td(on)} th} | “VA, 90% Typ ton! ton | lr 50% Ipr Tp mono fo-fnnn IF i ter } ter 1997-03-03 2/5

2 LL Yi brows] | | | | » | Bo 4

3 Y\\_|Won=8V 8 GT TTT

2 EMITTER, 2 EMITTER

oe ca || 8 8 B TTT TTT) (CEI ° ° g 8 2 = a Fy PLLTTHIN EST} E ETT WNT a + (See a + LS PCO Cee 3 3 8 ol 8 o 0 4 8 12 16 20 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VGE (V) Vor - VGE Ic - VGE Ss 12 ; Te2= Tl Loo sooo [a TT s EMITTER J 60) EMITTER Le SES CECEEr) eS e 4 ef ttt | Pe 2 yA PEER tooo BE} TUINPErH a | [nl eo tt At PUTS Eg 1e=15a |_| 1] 3 j s LET LT TAT TT tT ° 4 8 12 16 20 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) 1997-03-03 3/5

3 NS RL =302 3 Voc=900V, Vgg=+15V [|] —— Te=125°C

BY Sw [terse |, oe [P| ----te= 20 ° 0 100 200 300 0 5 10 15 20 25 30 CHARGE Qg (nC) COLLECTOR CURRENT Ic (A)

10 SWITCHING TIME — Rq SWITCHING ENERGY -— Ic

=== = == = g | Npvonvetoan | | — nemtasre See e eee eee eee Sf SOmmonemrrteR || =n. 28 i =fe= SS —— = so] ng=ra0n ——— jae aS a SS g er | Bm " "FRR eee b {tam —| » 3 === ae 8 eae | = a a a z —— | Boos} ere ee & g | em | | 5 oop PT A eo Jons0h eee re a 0 10 20 30 40 50 60 70 0 10 20 30 40 50 GATE RESISTANCE Rg (2) COLLECTOR CURRENT Ic (A) SWITCHING ENERGY - Rg Ip - VF 300, q inpuctive Loan |_| |_| —re=125°¢ COMMON Pty] & COMMON EMITTER al waa Te= 25°C 2 60| CATHODE s Vgp=t15V ——=—= =.= —— be = sol CE ===. a HY ! é 1¢=30A eer 7] fy = et li lft Zi

5 HK S “ 7 Wi 7 |

9 jee ee 2 ol j | A J| | | z SA en (—t oe EA / Wi WA Pb eCerr gro eC SLL LIU TT P27 canna ys 0 3050 ~ 100 B00 . a a a GATE RESISTANCE Rg ) FORWARD VOLTAGE Vp (V) 1997-03-03 4/5

10000 C — VCE 0 Rth() — tw

< Ee é 8 T o SS =a as LI TTT | [[orone srace || 2 800 ER ea a

2 MEH PNSe) 28 dle pe a

2 Ce | LEE A 2. HH el 5 gf a ee Sy &2 COU er Th gett BO US Sey % %| coumos errren Bone el Se ee ee | ten25%0 Esti metiii LATE TE PE TTT bss 3 5 «10 30 50 100 bet 10° 1077 1 10 COLLECTOR-EMITTER VOLTAGE Veg (V) PULSE WIDTH ty (s) REVERSE BIAS SOA $ SERRE EEE EEE FEE EEE ag a pe 8 eee Be osiiiter ft Pett re P 3 a A a a a es a eB CO 3 os| COMMON EMITTER pap Sailors | FEES EEE =240 oal® LEY |} ttt Ly ‘0300400600 B00” 000 1200 1400 1600 T800 COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-03-03 5/5

Product Information

MG30V2YS40 specifications and overview.

Summary

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Description

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Source title MG30V2YS40 Datasheet(PDF) - Toshiba Semiconductor

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