MG300J1US51 TOSHIBA | Alldatasheet
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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M4— 2-N6 4-$65403 Si ir zd pc © The Electrodes are Isolated from Case. 3 if -_ a Ga) gaa H oO} © High Input Impedance PLE |_| fet ¢ Includes a Complete Half Bridge in One jkstos| [zeros] Package. oo. 80+08 e Enhancement-Mode 9340.3 1080.8 @ High Speed : tp=0.30s (MAX.) (Ig =300A) peros os iotos , sakos trr=0.15s (MAX.) (Ip=300A) - Tazoe{ | - | al * Tow Saturation Voltage ae To 114 * NCR (sat) 2-70V OA) GO=8008) Qo aa xy TI Lr EQUIVALENT CURCUIT i 106408 ' r 60t08 E JEDEC = co 1 I E TOSHIBA 2-109A4A | Weight : 465g (Typ.) G MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Collector Emitter Voltage Voss | 600d Gate-Emitter Voltage Vaxs a Collector Current 3 A [ams | tcp | woo a Forward Current E A [ims | ew | 00 Collector Power Dissipation (Te=25°0) | Po__—|—ts00_ |W Junetion Temperature Storage Temperature Range —40~125 Isolation Voltage 2500 (AC 1 min.) Screw Torque (Terminal/M4/M6/Mounting)| — | 2/3/38 2610016402 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please Keep in mind the precautions and’ conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for ary Infringements of intellect propertyor other rights Gf tne third parvies wich may resui from Ms use. NO. Ncense’s granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL | TEST CONDITION | aa. | rye. [wax. [unr] Gate Leakage Current Von=+20v, von=0 | — | — [+500] na | Collector Cut-off Current Icrs _|Vor=600V, Ven=0 | — | — [| 4.0] ma | Gate-Emitter Cut-off Voltage Ig=30mA, Von=5V | 5.0 | 7.0] 8.0] v | Collector-Fmitter Saturation Voltage To=300A, Vgr=15v_ | — | 2.10] 270| v | , VcE=10V, VgE=0 rao | — foul [| Turn-on Delay Time | = | 020] 0.40] —— Inductive Load stching T¢=300A | = | 0.60] 1.20] Switching Time - ys Turn-off Delay Time Vop=+15V | — | 0.20] 0.40 Fall Time wep | — | 0.15] 0.30 of | — | 050] 1.00] Forward Voltage Ip=300A, Ven=0 | — | 2.80 8.00] v_| . Ip=300A, VgE=—10V Reverse Recovery Time ter di/dt=400A/ ps 0.08} 0.15) ys Thermal Resistance Rth(-0) ansistor Stage | = | — | °C/W [Diode Stage | — | — | 0.20] Note 1 Switching Time Test Circuit & Timing Chart Vor ' ' 90% { -VGE ' Ic} L Veco if it ' os 1 90% i 90% Rg i I\\ i fi att bee 1 ae i ta(of! | te td(on)! fer! | Lit hit | toff | | ton } 1997-03-03 2/5
640) 640; Lid A111 LL J ong 887 | common exernen So | Ae | ae e/a 2 480 7 2 480 17 4
5 PU Le 5 aa «||
g z | et | IW tt a Pt Ea } ann) Jane an) eee BL | WL [J comms earnen aoe Aero BP cet an) 200 Be — Dp, LALIT Trt tT t7l iti tit COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) Ic - VCE VCE - VGE
640 Ss 16
Lt yy yp ey = | common erm | TTT | [| cae ee ee | a Lima 2 480 @ 12] 4 es ELE T/A) | | eee ial a Zz f = 320 f z 3
5 PEPE Yet e Lit Uy
BLL | ZI | comsos enerren 6 | ttt | | WWWeeM4 Z| es 2 OO ee EO LF | | z 4 to=0e TTT | COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE-EMITTER VOLTAGE VgE (V) VCE - VGE VCE - VGE S16 Ss 16 conor zane || [I] | [|] common | TT] |] T | 8 8 EMITTER = eee inne = reese | [TT | | | 8 12) 8 12
2 Li TTT uy yt 2 LETT
gs JT} ya gS ft Tye 3 3 4 8] 2 8 ee Be tit tiie te E | E = = z Pie BE LM Jc]
4 See $<
6 Lit | | (heer e [] |) | (hess
2 LL | TL | eevee TTT] 2 LL | | ce TT TT |
° % 4 8 12 16 20 ° ) 4 8 12 16 20 GATE-EMITTER VOLTAGE Vgg (V) GATE-EMITTER VOLTAGE Vgg (V) 1997-03-03 3/5
Ic - VGE ~ VCE, VGE — Qa 640 = 400 16 common enmmmee | [iy] | | | » LLLI TIT ITT « 5 we 2 op ee YT TTT lg 2 480) 2 = 300) ‘1 4 12 > s Little | ee: — & | iz Ye 300 S ee) Ce Fo tf Ne | tT |g eee eo BO TTT? g E \\ g £ ] H a } COMMON EMITTER E 5 iT \\ 3 160 = sooth RL=10 4 2 et tty & WNL | z 25000 2 iNT TTT = LLL LY | 2 SS , a | ) 00 80200 F609 Tadd GATE-EMITTER VOLTAGE VgE (V) CHARGE Qg (nC) 1 ton, td(on), tr — IC 5 ton, td(on), tr — RG - —— Sr | ~ LITT TT e Pea eay |__| SoMMoN euerrer FT o5s}-—+—_+ PP are 3 cc y) , SS] fer TT pt 2 03 4 3 nem | je i [Eee TT é fl HH é eS es! | oC SCR == 2 ott B 0.05} |_| | 1 ater & = 4 if ZA. gy 8 SST common exirrer = og be | LA TT BL TTT TT] vers sisv 8 (Pea BLL | Ti Sess err 2 on SoH tea 125°%0 on = T| i 3080 T00 300 500 bet 750 30% COLLECTOR CURRENT Ig (A) GATE RESISTANCE Rg (9) tomh ta(om, tt - Ic tofh ta(om, tt - Ra SS 5 - ——— - LITT TT g a | & | common miarmer FTE] = Ee = | Voge tisv LT = _——— as ==, = S05) un SSSSESESESIES Z| cia s taom GA SSRRESSSIS YY | 4 Ir Nite otal yf TIN Let) } eH === 222 8 HESS P ree 2 —— z ST eo | g REE common exirrer g op 7 | ee © ooo} —} {L1H veo=200y = | lbsahaseetil cy | BLT TTT TTT sees sssv é tH " : BaTSO te=25r0 5 CT TT Bos SHE tees ® Wile TT _| “10 30 50 100, 300 = 500 “05 1 3 5 10 30 «50 COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg (9) 7997-03-03 4/5
Ip - V 2 ter, Ire — I eo ——— “3 a= COMMON CATHODE (| blyA] +5 | atm a fee Og = 480 A 6. “OD oe 2 Be of Sr pee es A/c Be BLSRSeEE=e
2 TIA se i [
: 2 / SEG ee Seeeeeneerien z 160] A Al ge SS SS C—O | LLY eas | © LLY 2 FESR ee] Ler || Pe ) 08 16 24 3.2 40 £ 0 100 200 300 FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip (A) Cc - Vcr Rth(t) — tw ae [ta Sa Se eee eee 8 ees eerie om STS ie FH 2% Erte biobe stace 5 coo TR ETT TTT goa LLM er TT y 0 2s US a a es SS |
5 Seed Bo See iE mansistor srace |
& | Yara! SNH ese essere foMtle TOS cre TH Eee A rool ll oootL_L LTH TTT TENT FATT 0.3 1 3 1030 100-300 10° 10? 1077 1 10 COLLECTOR-EMITTER VOLTAGE Veg (V) PULSE WIDTH ty (s) SAFE OPERATING AREA REVERSE BIAS SOA goof tomas eutsey FF ASTANN ool gum tt Pee 2 [isi ENN 2 ag EEE EEE 2 emmvoen INT [| UN?" NMI a Ore See SHH BEE SSS ime" EN S got ttt tT Tt Py tt ooo oo 400) 2 sof HHitDe operanion AEE No z [tt yy ee yey tt
8 Mii XT NT 8 wo FEE
g *
3 PULSE Te=26°C | NHN 8 MOTT
3 | benareo uiveany FENG Pro 3 COCCee eee 5 3| DERATED LINEARLY CocaNIE LLU 8 100) Peet WITH INCREASE IN NM ce=tisv| | Tt tt ty tT jLenrerarone. | | UTIK | TTT) glrersa FP sa 34080100 300-1000 0100 200300 00500 600 700 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-03-03 5/5