MG200Q2YS65H TOSHIBA | Alldatasheet

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Technical content

TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching

Applications

/Gb7/G20High input impedance /Gb7/G20Enhancement-mode /Gb7/G20The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Tc /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 1200 V Gate-emitter voltage V GES /Gb120 V DC I C 200 Collector current 1 ms I CP 400 A DC I F 200 Forward current 1 ms I FM 400 A Collector power dissipation (Tc /G3d 25°C) PC 1310 W Junction temperature T j 150 °C Storage temperature range T stg /G2d40 to 125 °C Isolation voltage V Isol 2500 (AC 1 minute) V Terminal /Gbe/G20 3 Screw torque Mounting /Gbe 3 N▪m Unit: mm JEDEC ― JEITA ― TOSHIBA 2-109C4A Weight: 430 g (typ.) G1 E1/C2 E2C1

Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE /G3d /Gb120 V, VCE /G3d 0 /Gbe /Gbe /Gb1500 nA Collector cut-off current I CES V CE /G3d 1200 V, VGE /G3d 0 /Gbe /Gbe 2.0 mA Gate-emitter cut-off voltage V GE (off) I C /G3d 200 mA, VCE /G3d 5 V 4.0 /Gbe 7.0 V Tc /G3d 25°C /Gbe 3.0 4.0 Collector-emitter saturation voltage V CE (sat) IC /G3d 200 A, VGE /G3d 15 V Tc /G3d 125°C /Gbe 3.6 /Gbe V Input capacitance C ies V CE /G3d 10 V, VGE /G3d 0, f /G3d 1 MHz /Gbe 17000 /Gbe pF Turn-on delay time t d (on) /Gbe 0.05 /Gbe Rise time t r /Gbe 0.05 /Gbe Turn-on time t on /Gbe 0.10 /Gbe Turn-off delay time t d (off) /Gbe 0.55 /Gbe Fall time t f /Gbe 0.05 0.15 Switching time Turn-off time t off Inductive load VCC /G3d 600 V, IC /G3d 200 A VGE /G3d /Gb115 V, RG /G3d 4.7 /G57 /Gbe 0.60 /Gbe /G6ds Forward voltage V F I F /G3d 200 A, VGE /G3d 0 /Gbe/G202.4 3.5 V Reverse recovery time t rr IF /G3d 200 A, VGE /G3d /G2d10 V, di/dt /G3d 700 A//G6ds /Gbe 0.1 /Gbe /G6ds Transistor stage /Gbe /Gbe 0.095 Thermal resistance R th (j-c) Diode stage /Gbe /Gbe 0.21 °C/W Turn-on E on /Gbe/G2020 /Gbe Switching loss Turn-off E off Inductive load VCC /G3d 600 V, IC /G3d 200 A VGE /G3d /Gb115 V, RG /G3d 4.7 /G57 Tc /G3d 125°C /Gbe/G2017 /Gbe mJ Note: Switching time measurement circuit and input/output waveforms IC RG RG L IF /G2dVGE VCC VCE VGE IC 90% 90% 10% 10% 90% td (off) toff tf trtd (on) ton 10% trr

Collector-emitter voltage V CE (V) IC – VCE (sat) Collector current I C (A) Collector-emitter voltage V CE (V) IC – VCE (sat) Collector current I C (A) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) IC – VGE Collector current I C (A) Forward voltage V F (V) IF – VF Forward current I F (A) 4 8 12 16 20 Common emitter Tc /G3d 25°C IC /G3d 400 A 100 A 200 A 100 150 200 4 8 12 16 Common emitter VCE /G3d 5 V Tc /G3d 125°C /G2d40°C 25°C 100 200 300 400 1 2 3 4 Tc /G3d 125°C 25°C Common cathode VGE /G3d 0 100 200 300 400 2 4 6 8 10 VGE /G3d 8 V 10 V 12 V 20 V 18 V 15 V Common emitter Tc /G3d 125°C 4 8 12 16 20 Common emitter Tc /G3d 125°C IC /G3d 400 A 100 A 200 A 12 V 100 200 300 400 2 4 6 8 10 Common emitter Tc /G3d 25°C VGE /G3d 8 V PC /G3d 1310 W 10 V 20 V 18 V 15 V

Switching loss (mJ) Switching time ( /G6ds) Collector current I C (A) Switching time – IC Switching time ( /G6ds) Collector current I C (A) Switching time – IC Switching time ( /G6ds) Gate resistance R G ( /G57) Switching time – RG Switching time ( /G6ds) Gate resistance R G ( /G57) Switching time – RG Collector current I C (A) Switching loss – IC Gate resistance R G ( /G57) Switching loss – RG Switching loss (mJ) 0.01 0.1 1 100 10 tr td (on) ton Common emitter VCC /G3d 600 V IC /G3d 200 A VGE /G3d /Gb115 V : Tc /G3d 25°C : Tc /G3d 125°C 0.01 0.1 1 100 10 : Tc /G3d 25°C : Tc /G3d 125°C Common emitter VCC /G3d 600 V IC /G3d 200 A VGE /G3d /Gb115 V toff td (off) tf 0.01 0.1 100 1000 toff td (off) tf Common emitter VCC /G3d 600 V VGE /G3d /Gb115 V RG /G3d 4.7 /G57 : Tc /G3d 25°C : Tc /G3d 125°C 0.1 100 10 1000 100 Eoff Edsw Eon : Tc /G3d 25°C : Tc /G3d 125°C Common emitter VCC /G3d 600 V VGE /G3d /Gb115 V RG /G3d 4.7 /G57 0.01 0.1 100 1000 : Tc /G3d 25°C : Tc /G3d 125°C Common emitter VCC /G3d 600 V VGE /G3d /Gb115 V RG /G3d 4.7 /G57 tr ton td (on) 1000 1 100 10 Eon Eoff Edsw : Tc /G3d 25°C : Tc /G3d 125°C Common emitter VCC /G3d 600 V IC /G3d 200 A VGE /G3d /Gb115 V 100

Transient thermal resistance Rth (t) ( ° C / W ) Collector current I C (A) Charge QG (nC) VCE, VGE – QG Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) C – VCE Capacitance C (pF) Collector-emitter voltage V CE (V) Short circuit SOA Collector current (x times) Collector-emitter voltage V CE (V) Reverse bias SOA Pulse width t w (s) Rth (t) – tw 0 400 1400200 800 1200 VCC /G3c/G3d900 V Tj /G3c/G3d125°C tw /G3d 5 /G6ds 600 1000 0.1 1000 0 500 1500 Tj /G3c/G3d125°C VGE /G3d /Gb115 V RG /G3d 4.7 /G57 100 1000 100 0.01 10000 100000 1 100 Cies Coes Cres Common emitter VGE /G3d 0 f /G3d 1 MHz Tc /G3d 25°C 1000 0.1 10 0.001 0.001 0.1 0.1 10 Diode stage Transistor stage Tc /G3d 25°C 0.01 0.01 1 Gate-emitter voltage V GE (V) 800 1600 800 2000 Common emitter RL /G3d 3 /G57 Tc /G3d 25°C 400 1200 400 1600 1200 VCE /G3d 0 600 V 400 V 200 V

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE