MG200Q2YS40 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 4-Fast-on Tab #110 E2 B2 4-$65+0.3 e High Input Impedance ae ag — Stee Sr © High Speed : tp=0.5us(Max.) (AS | Ge ag as tyr =0.5/s (Max.) a ad ae — ee JAPAN’ aL | fe} — © Low Saturation Voltage et SOK zaiog, | | e : VCE (sat) =4.0V (Max.) 80408 1 ¢ Enhancement-Mode 73303 — @ Includes a Complete Half Bridge in One Package. 49 £06. 1e ect les are Isolate from Case. 3 ‘03 Fy 5440.6 38 a a EQUIVALENT CIRCUIT 3 ated ann ° El E2 L_sotos | C1 Ee JEDEC = TOSHIBA 2-109C1A G1 E1/C2 G2 Weight : 430g (B1) (B2) MAXIMUM RATINGS (Ta = 25°C) Gate Emitter Voltage Vors Poo [i | a Collector Current c Ic A Forward Current | oc [| me | a Collector Power Dissipation (Te= 25°C) 1300 Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 2500(AC 1 minute) Screw Torque (Terminal / Mounting) Pee ts | 2610016402 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating, ranges as 4at forth in the most recent products spectications. Also, please Keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for ary Infringements of intellect propertyor other rights Gf tne third parvies wich may resui from Ms use. NO. Ncense’s granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION UNIT Gate Leakage Current Vap=+20V, Von=0 | — | — | +20] 2a | Collector Cut-off Current Icgs _| Vor=1200V, Von=0 [ — | — | 20[ ma | Gate-Emitter Cut-off Voltage | Vam(oFF) | 1o=200mA, Von=5V [| so0| — | 6o| v | Collector-Emitter ete [vem fermnvarm [|| al Input Capacitance VcE=10V, VoR=0, f=1MHz [| — | 24000 | — | or | | os | 06 | Switching Time Luo" Time | ton 15V) 8 |_o4 | 0.8 us Fall Time _15v | o2 | 05 | Sov | os | 15] Forward Voltage Tp=200A, Von=0 | — | 20] so] v | . Ip=200A, Vgp=—10V Reverse Recovery Time ter di/dt=300A/ps 0.25 0.5) us 0.096 Thermal Resistance Ringe) |= | — | bc rw [pide LE = | = J 025 | 1997-03-03 2/5

400 Ic - VCE a VCE - VGE

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COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE-EMITTER VOLTAGE VgE (V) < 2 VCE - VGE = VCE - VGE s LLLT TLL] ones s LLL I TT | coe

8 EMITTER s EMITTER

eee |e et || | 2 a 2 a 1 § 5 ene eee (ee ee ee a 4 NE 04 a 4 LT SEE TP | E E PURE | Gs 0 4 8 12 16 20 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VGE (V) Ic — VGE _ VCE; VGE — 9G. TT TTT conse = ™T TT TTT TAT? « 2 wrt | Fl Pee EET, g e"TTTTFOIT) «6 HAH HHS; 5 et LAZU, & PT) 8 scope en ey Eo HAY ITT TTI, = bu | RRR E Pecoooeccor) BASS) conotomm 3 y a) Acne g LLLA TTI [| 8 PREP E reve ° GATE-EMITTER VOLTAGE Vgg (V) CHARGE Qg (nC) 1997-03-03 3/5

SWITCHING TIME — Ic SWITCHING TIME — Rg TTT 19 ===. of {ff common enerrre, Neccaty. teczwoaf PPL A Coe ; a . Voc =600V, Vgn=+15V . 3 Vge=+t15v, Te=25°C a g Lt g=40, Te=26C 2 tn an poe ee “ —— oA E > -—— Bee Tt I * he | ee i seem TTT a 3 a Ta 300 a COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg (9) ‘oo Ip - Ve 2 soo ter, Ter — IF ee ea zc a ;~ et7] | iy ll AL LAY) | voenv <2 Lit i Vgg=~10V, Te=26°C 0 1.0 2.0 3.0 4.0 i 0 50 100 150 200 FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip (A) Cc — VCE Rthit) — tw a 3 a se | aS = a Seo fee i Be UM S00 EAE aa to cect tai aati (ee 3 9) comovnome SSS = 8 CATT Poifitld ff trill Bo Te=25°C oii o.oo} rp |p 101 CUT TTT 0.003L—L LO i 0.03 0.1 08 1 3 10-30 100 10-§ 10°? 107" 1 10 COLLECTOR-EMITTER VOLTAGE Vcg (V) PULSE WIDTH ty (s) TTT 1997-03-03 415

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g NONREPETITIVE NIE | Bn) reat QC opERATION SHES} g ttt tty ttt 3 olcunves wusr se NGF SEEHARAES) = Pace & afore sek “NUH 8 i) teeny SESE SES WITH INCREASE IN NI 98) geen a lremperatore, [UND | TTT TY on i L 3 10 30 100 = 300 1000 3000 0 200 400 600 800 =©1000 1200 1400 COLLECTOR-EMITTER VOLTAGE Veg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-03-03 5/5