MG200Q1US41 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 2-M4 2-M6 4-865 +0.3 e High Input Impedance Zale 4 aT al ol . 2 le [yl [4 A] 3} el 3 e@ High Speed =: tp=0.5us (Max.) g is [i bal alaia SUES} (ol 2 typ =0.5s (Max.) oy) a ee patos g+05) || e Low Saturation Voltage ao Srot * 8040.8 : VCE (sat)=4.0V (Max.) 93403 @ — Enhancement-Mode 108208 The Electrod Isolated fi io 3940.5 340.5 10+0.5 5440.8 e . mm e Electrodes are Isola' from Case. Sato) fe4z03 | | ep el E EQUIVALENT CIRCUIT of ne ‘a ND hh T gE 60x08 Cc E JEDEC _ G TOSHIBA 2-109A4A (B) Weight : 465g MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Collector-Emitter Voltage Vors 1200 Gate-Emitter Voltage Vors [oo eT 00 Collector Current c A [ums | tcp | too [oo me Tt Forward Current z A [im | ew | too Collector Power Dissipation (Te=25°C) 1400 Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 2500 (AC, 1 min.) Screw Torque (Terminal: M4/M6/Mounting)| — | _ 2/3/38 2610016442 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical sensiity and vulnerability to physical stress. isthe responsibilty of the buyer, when utiizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the. precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsiblity is assumed by, TOSHIBA CORPORATION foF any Infringements of intellectual property or ther rights of the thifd parties which may result from Is use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [Gate Leakage Current | igus |Vau=+20v, von=0 | — | — | +40] za | Vcp=1200V, Van =0 | — | — | 40] ma | | Gate-mitter Cut-off Voltage [Von OFF)|1o=200ma, Vow=sv | 30 — | 60] v | Collector-Emitter _ _ vr eam vor = [wf of | [Input Capacitance | Cies_ | Vow=10V, Von=0, f=1mHz | — [24000] — | pF | 15V ao Ste Le [2s] os] Switehing Ti od], ose * [=] oaf os] S sow [| =] os] 15] Forward Voltage Tp=200A, VgE=0 | — | 20] so] v | . Ip=200A, VGE=-10V Reverse Recovery Time ter di/dt=300A/ ps 0.25} 0.5) ys Thermal Resistance Rth (j-c) —_— |= | — | °C/W [Digs | = | — Ff 025 | 1997-03-03 2/5

400 Ic - VCE a VCE - VGE

2 EMITTER: 8

2 [eae KEL BOTT | ewe 2 “Tf rll)6 8 “LETT een ene eee eee eee COOYOCPRST og POP Bo EE PT ee 100) t+ 2 4 0 oe |_| un) 4nnn eS ———— i VAeeGnh=o 8 a ee ee | a? 2 eee COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE-EMITTER VOLTAGE VgE (V) <6 VCE - VGE = 16 VCE - VGE

8 CLT | me ST | mate

PCO)? “Dd ee a 8) 4 8} ee ee ene ee ee a 4 (S=a8 2 4 [eS PD pe SSS ET RES P Ceereere| og Cee 8 % 4 8 12 16 20 8 % 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) Ic — VGE _ VCE, VGE — QG “TLLIEFPLLL» 406 - ¢ “A eer ee 7 a sv Troirer tt) 6g HEYA 4 CS V P.COCCEE Er bee Areett ee | a EVEL YEALT TT TT 8 eli fell tl) # wALLAZorrre, § € to=125°0 J] 3 WSS io —E Efe TT) ge “ARS E 3 y 2 200bht 4 : 3 | common aren ae) CRO LL AZ | ve 2 Woeeee yr, 0 4 8 12 16 20 ° 0 400 800 1200 1600 2000 2400 GATE-EMITTER VOLTAGE Vgg (V) CHARGE Qg (nC) 1997-03-03 3/5

SWITCHING TIME - Ic SWITCHING TIME - RG i veeseroy TIME TI - ws ft PrP ry g 1) teoanns Sse — ee ee & Vor=+18v FEE HH g of || | | ere. | | 2 tore Cia —| air fy - [7 2 SCM Ci g pane 2 UU ee g A wa COMMON = tps ee Soap orga % oot HU eee err SSesase Vor=#15v | coe CTT mraee LUA TEIN TTT COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg (9) Ip - VF 2 im ter, Ine — IF 480 s SS | , “=== eee eee FEE] EEE z 400 Pc a a ae se ., (Oe a oe ee ee 320| 5 30 ee Oe se “7 [fe f LETC | 2 if La BE Sa Heer LTT Proper] SSS SS) conor cmon PEC CgET commccrmmen |g EEE taco E oL LLY | | Veer ve ft tty | oO 05 10 15 20 25 30 35 40 £ 0 40 80 120 160 200 240 FORWARD VOLTAGE Vy (V) FORWARD CURRENT Ip (A) C - VCE Rth(t) — tw 1000 ay] a a | AS eof ESSE] recov | ‘S0000 Nc till & coool AT INT SF — SS ae Mecaiti aati anil ae, a er é ge ee = tray i Sl ON ammren CH a a = 5 900] counon emrmer HTN Bell CTI CTT TTI Vor=0 FET cee tt B00 sol Ee 0.003—-L-L CHT 0.03 «01 0.8 1 3 10 30100 10-8 10°? 107* 1 10 COLLECTOR-EMITTER VOLTAGE Vcg (V) PULSE WIDTH ty (s) TTT 1997-03-03 4/5

SAFE OPERATING AREA REVERSE BIAS SOA

1000 OPER ANG AREA S00)

[iio te sof tf Fig MAX. (PULSED) % +-FHit HHH] . a 3 = awe NG Na 2 2 \\ XT] & a a 2g € LEE 5 30 NTN 5 SSS SS SS SS SS Se A NONREPETITIVE VTL i a a By PULSE pc operaTioN EES g ,TETit ttt ttt te 3 curves must xe AGEN 3 = 2) CE) ee, 0.5} J |

5 Min icmense a AG ee 5 03] Yorss3ey

iLtewreratore, [//NT |TV TY oot POPE ETT 1 3 10 30 100 300 1000 3000 0 200 400 600 800 1000 1200 = 1400 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Veg (V) 1997-03-03 5/5