MG1250H-XN2MM LITTELFUSE | Alldatasheet

Document overview

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Technical content

Features

  • High level of integration
  • IGBT3 CHIP(Trench+Field Stop technology)
  • Low saturation voltage and positive temperature coefficient
  • Fast switching and short tail current
  • Free wheeling diodes with fast and soft reverse recovery
  • Solderable pins for PCB mounting
  • Temperature sense included
  • AC motor control
  • Motion/servo control
  • Inverter and power supplies Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit IGBT VCES Collector - Emitter Voltage TJ=25°C 1200 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 75 A TC=80°C 50 A ICM Repetitive Peak Collector Current tp=1ms 100 A Ptot Power Dissipation Per IGBT 260 W Diode VRRM Repetitive Reverse Voltage TJ=25°C 1200 V IF(AV) Average Forward Current TC=25°C 75 A TC=80°C 50 A IFRM Repetitive Peak Forward Current tp=1ms 100 A I2t TJ =125°C, t=10ms, VR=0V 680 A2s Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit TJ max Max. Junction Temperature 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage AC, t=1min 3000 V CTI Comparative Tracking Index 250 Md Mounting Torque Recommended (M5) 2.5 5 N·m Weight 180 g MG1250H-XN2MM

Applications

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 188 MG1250H-XN2MM 1200V 50A IGBT Module Symbol Parameters Test Conditions Min Typ Max Unit IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=2mA 5.0 5.8 6.5 V VCE(sat) Collector - Emitter IC=50A, VGE=15V , TJ=25°C 1. 7 V Saturation Voltage IC=50A, VGE=15V , TJ=125°C 1. 9 V IICES Collector Leakage Current VCE=1200V , VGE=0V , TJ=25°C 1 mA VCE=1200V , VGE=0V , TJ=125°C 10 mA IGES Gate Leakage Current VCE=0V , VGE=±15V , TJ=125°C -400 400 nA RGint Integrated Gate Resistor 4.0 Ω Qge Gate Charge VCE=600V , IC=50A , VGE=±15V 0.47 μC Cies Input Capacitance VCE=25V , VGE=0V , f =1MHz 3.6 nF Cres Reverse Transfer Capacitance 0.16 nF td(on) Turn - on Delay Time VCC=600V IC=50A RG =18Ω VGE=±15V Inductive Load TJ=25°C 90 ns TJ=125°C 90 ns tr Rise Time TJ=25°C 30 ns TJ=125°C 50 ns td(off) Turn - off Delay Time TJ=25°C 420 ns TJ=125°C 520 ns tf Fall Time TJ=25°C 70 ns TJ=125°C 90 ns Eon Turn - on Energy TJ=25°C 4.9 mJ TJ=125°C 6.6 mJ Eoff Turn - off Energy TJ=25°C 4.0 mJ TJ=125°C 4.9 mJ ISC Short Circuit Current tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 200 A RthJC Junction-to-Case Thermal Resistance (Per IGBT) 0.48 K/W Diode VF Forward Voltage IF=50A, VGE=0V , TJ =25°C 1 .65 V IF=50A, VGE=0V , TJ =125°C 1 .65 V tRR Reverse Recovery Time IF=50A, VR=600V diF/dt=-1200A/µs TJ=125°C 275 ns IRRM Max. Reverse Recovery Current 50 A Erec Reverse Recovery Energy 4.4 mJ RthJCD Junction-to-Case Thermal Resistance (Per Diode) 0.78 K/W Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit R25 Resistance Tc=25°C 5 KΩ B25/50 3375 K

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 189 MG1250H-XN2MM 1200V 50A IGBT Module Figure 1: T ypical Output Characteristics for IGBT Inverter IC (A) VCE˄V˅ Tj =125°C Tj =25°C 100 VGE =15V 3.5 Figure 2: T ypical Output Characteristics for IGBT Inverter VGE˄V˅ IC (A) Tj =125°C Tj =25°C VCE =20V 1210 9 7 6 5 8 11 100 Figure 3: T ypical T ransfer Characteristics for IGBT Inverter 001 0 20 30 40 Eon Eoff (mJ) Eon Eoff RG˄Ω ˅ VCE=600V IC=50A VGE=±15V Tj =125°C Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter 0 20 IC˄A˅ VCE=600V RG=18Ω VGE=±15V TVj =125°C 10060 40 Eoff Eon

20 Eon Eoff (mJ)

Figure 5: Switching Energy vs. Collector Current for IGBT Inverter Figure 6: Reverse Biased Safe Operating Area for IGBT Inverter 100 0 200 400 6008 00 1000 1200 VCE˄V˅ 1400 RG=18Ω VGE=±15V Tj =125°C IC (A) VCE˄V˅ IC (A) 2.04 .5 5.0 100 TJ =125°C GEV =11V GEV = 9V GEV =13V GEV =15V GEV =17V GEV =19V

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 191 MG1250H-XN2MM 1200V 50A IGBT Module Part Numbering System Part Marking System PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT CIRCUIT TYPE WAFER TYPE PACKAGE TYPE MG12 50 H - X N2 MM VOLTAGE RATING CURRENT RATING ASSEMBLY SITE 12: 1200V 50: 50A MG1250H-XN2MM LOT NUMBER Space reserved for QR code The foot pins are in gold / nickel coating Dimensions-Package H Packing Options Part Number Marking Weight Packing Mode M.O.Q MG1250H-XN2MM MG1250H-XN2MM 180g Bulk Pack 40 Circuit Diagram