MG12450WB-BN2MM LITTELFUSE | Alldatasheet

Document overview

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Technical content

Features

Applications

  • IGBT3 CHIP(Trench+Field Stop technology)
  • Low saturation voltage and positive temperature coefficient
  • Fast switching and short tail current
  • Free wheeling diodes with fast and soft reverse recovery
  • Temperature sense included
  • AC motor control
  • Motion/servo control
  • Photovoltaic/Fuel cell
  • Inverter and power supplies Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit IGBT VCES Collector - Emitter Voltage TJ=25°C 1200 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 600 A TC=80°C 450 A ICM Repetitive Peak Collector Current tp=1ms 900 A Ptot Power Dissipation Per IGBT 1950 W Diode VRRM Repetitive Reverse Voltage TJ=25°C 1200 V IF(AV) Average Forward Current TC=25°C 450 A TC=80°C 350 A IFRM Repetitive Peak Forward Current tp=1ms 900 A I2t TJ =125°C, t=10ms, VR=0V 34000 A2s Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit TJ max Max. Junction Temperature 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage AC, t=1min 3000 V CTI Comparative Tracking Index 210 Torque Module-to-Sink Recommended (M5) 2.5 5 N·m Torque Module Electrodes Recommended (M6) 3 5 N·m Weight 350 g MG12450WB-BN2MM

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 110 MG12450WB-BN2MM 1200V 450A IGBT Module Symbol Parameters Test Conditions Min Typ Max Unit IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=18mA 5.0 5.8 6.5 V VCE(sat) Collector - Emitter IC=450A, VGE=15V , TJ=25°C 1. 7 V Saturation Voltage IC=450A, VGE=15V , TJ=125°C 2.0 V IICES Collector Leakage Current VCE=1200V , VGE=0V , TJ=25°C 1 mA VCE=1200V , VGE=0V , TJ=125°C 5 mA IGES Gate Leakage Current VCE=0V , VGE=±15V , TJ=125°C -400 400 nA RGint Integrated Gate Resistor 1. 7 Ω Qge Gate Charge VCE=600V , IC=450A , VGE=±15V 4.3 μC Cies Input Capacitance VCE=25V , VGE=0V , f =1MHz 32 nF Cres Reverse Transfer Capacitance 1. 5 nF td(on) Turn - on Delay Time VCC=600V IC=450A RG =1.6Ω VGE=±15V Inductive Load TJ=25°C 160 ns TJ=125°C 170 ns tr Rise Time TJ=25°C 45 ns TJ=125°C 50 ns td(off) Turn - off Delay Time TJ=25°C 460 ns TJ=125°C 530 ns tf Fall Time TJ=25°C 100 ns TJ=125°C 150 ns Eon Turn - on Energy TJ=25°C 20 mJ TJ=125°C 31 mJ Eoff Turn - off Energy TJ=25°C 33 mJ TJ=125°C 55 mJ ISC Short Circuit Current tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V 1800 A RthJC Junction-to-Case Thermal Resistance (Per IGBT) 0.064 K/W Diode VF Forward Voltage IF=450A, VGE=0V , TJ =25°C 1 .65 V IF=450A, VGE=0V , TJ =125°C 1. 6 V tRR Reverse Recovery Time IF=450A, VR=600V diF/dt=-7200A/µs TJ=125°C 255 ns IRRM Max. Reverse Recovery Current 385 A Erec Reverse Recovery Energy 38 mJ RthJCD Junction-to-Case Thermal Resistance (Per Diode) 0.12 K/W Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit R25 Resistance Tc=25°C 5 KΩ B25/50 3375 K

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 111 MG12450WB-BN2MM 1200V 450A IGBT Module Figure 1: T ypical Output Characteristics for IGBT Inverter IC (A) VCE˄V˅ TJ =125°C TJ =25°C 900 750 450 300 150 VGE =15V 600 Figure 2: T ypical Output Characteristics for IGBT Inverter VGE˄V˅ IC (A) TJ =125°C TJ =25°C VCE =20V 1210 9 7 6 5 8 11 900 750 450 300 150 600 Figure 3: T ypical T ransfer Characteristics for IGBT Inverter 180 002 4 68 16 Eon Eoff (mJ) Eon Eoff RG˄Ω ˅ VCE=600V IC=450A VGE=±15V TJ =125°C 10 12 160 120 140 100 Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter 0 150 IC˄A˅ VCE=600V RG=1.6Ω VGE=±15V TJ =125°C 600 450 300 Eoff Eon

140 Eon Eoff (mJ)

Figure 5: Switching Energy vs. Collector Current for IGBT Inverter Figure 6: Reverse Biased Safe Operating Area for IGBT Inverter 200 400 600 800 1000 0 200 400 6008 00 1000 1200 VCE˄V˅ 1400 RG=1.6Ω VGE=±15V TJ =125°C IC (A) VCE˄V˅ IC (A) TJ =125°C 2.04 .5 5.00 900 750 450 300 150 600 GEV =11V GEV = 9V GEV =13V GEV =15V GEV =17V GEV =19V

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 113 MG12450WB-BN2MM 1200V 450A IGBT Module Part Numbering System Part Marking System PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT CIRCUIT TYPE WAFER TYPE PACKAGE TYPE MG12450 WB - B N2 MM VOLTAGE RATING CURRENT RATING ASSEMBLY SITE 12: 1200V 450: 450A 2x(IGBT+FWD) LOT NUMBER Space reserved for QR code MG12450WB-BN2MM Dimensions-Package WB Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12450WB-BN2MM MG12450WB-BN2MM 350g Bulk Pack 60 The foot pins are in gold / nickel coating