MG12400D-BN2MM LITTELFUSE | Alldatasheet

Document overview

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Technical content

Features

Applications

  • High short circuit capability, self limiting short circuit current
  • IGBT3 CHIP(Trench+Field Stop technology)
  • VCE(sat) with positive temperature coefficient
  • Fast switching and short tail current
  • Free wheeling diodes with fast and soft reverse recovery
  • Low switching losses Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit IGBT VCES Collector - Emitter Voltage TJ =25°C 1200 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 580 A TC=80°C 400 A ICM Repetitive Peak Collector Current tp=1ms 800 A Ptot Power Dissipation Per IGBT 1925 W Diode V RRM Repetitive Reverse Voltage TJ =25°C 1200 V IF(AV) Average Forward Current TC=25°C 580 A TC=80°C 400 A IFRM Repetitive Peak Forward Current 800 A I2t TJ =125°C, t=10ms, VR =0V 30000 A2s
  • Medical applications
  • High frequency switching application
  • Motion/servo control
  • UPS systems Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ®RoHS Agency Approvals Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit TJ max Max. Junction Temperature 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage AC, t=1min 3000 V CTI Comparative Tracking Index 350 Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M6) 2.5 5 N·m Weight 320 g AGENCY AGENCY FILE NUMBER E71639

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 116 MG12400D-BN2MM 1200V 400A IGBT Module Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=16mA 5.0 5.8 6.5 V VCE(sat) Collector - Emitter IC=400A, VGE=15V , TJ=25°C 1. 7 V Saturation Voltage IC=400A, VGE=15V , TJ=125°C 1. 9 V IICES Collector Leakage Current VCE=1200V , VGE=0V , TJ=25°C 2 mA VCE=1200V , VGE=0V , TJ=125°C 10 mA IGES Gate Leakage Current VCE=0V , VGE=±15V , TJ=125°C -400 400 nA RGint Integrated Gate Resistor 1. 9 Ω Qge Gate Charge VCE=600V , IC=400A , VGE=±15V 3.8 μC Cies Input Capacitance VCE=25V , VGE=0V , f =1MHz 28 nF Cres Reverse Transfer Capacitance 1. 0 nF td(on) Turn - on Delay Time VCC=600V IC=400A RG =1.8Ω VGE=±15V Inductive Load TJ=25°C 160 ns TJ=125°C 170 ns tr Rise Time TJ=25°C 40 ns TJ=125°C 45 ns td(off) Turn - off Delay Time TJ=25°C 450 ns TJ=125°C 520 ns tf Fall Time TJ=25°C 100 ns TJ=125°C 160 ns Eon Turn - on Energy TJ=25°C 20 mJ TJ=125°C 30 mJ Eoff Turn - off Energy TJ=25°C 33 mJ TJ=125°C 50 mJ ISC Short Circuit Current tpsc≤10μS , VGE=15V , TJ=125°C , VCC=900V 1550 A RthJC Junction-to-Case Thermal Resistance (Per IGBT) 0.065 K/W Diode VF Forward Voltage IF=400A, VGE=0V , TJ =25°C 1 .65 V IF=400A, VGE=0V , TJ =125°C 1 .65 V tRR Reverse Recovery Time IF=400A, VR=600V diF/dt=-8000A/µs TJ=125°C 450 ns IRRM Max. Reverse Recovery Current 75 A Erec Reverse Recovery Energy 35 mJ RthJCD Junction-to-Case Thermal Resistance (Per Diode) 0.12 K/W

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 117 MG12400D-BN2MM 1200V 400A IGBT Module Figure 1: T ypical Output Characteristics IC (A) VCE˄V˅ TJ =125°C TJ =25°C 800 640 320 160 VGE =15V 3.0 480 Figure 2: T ypical Output Characteristics VGE˄V˅

160 IC (A)

TJ =125°C TJ =25°C VCE =20V 1210 9 7 6 5 8 11 480 640 Figure 3: T ypical T ransfer characteristics 200 002 4 10 Eon Eoff (mJ) Eon Eoff RG˄Ω ˅ VCE=600V IC=400A VGE=±15V TJ =125°C 6 8 14 1812 120 160 Figure 4: Switching Energy vs. Gate Resistor 0 100 IC˄A˅ VCE=600V RG=1.8Ω VGE=±15V TJ =125°C 800200 Eoff Eon

120 Eon Eoff (mJ)

Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area 100 200 600 900 0 200 400 600 800 1000 1200 VCE˄V˅ 1400 RG=1.8Ω VGE=±15V TJ =125°C IC (A) 300 400 500 800 700 VCE˄V˅ IC (A) TJ =125°C 2.04 .5 5.0 800 640 320 160 480 GEV =11V GEV = 9V GEV =13V GEV =15V GEV =17V GEV =19V

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 119 MG12400D-BN2MM 1200V 400A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12400D-BN2MM MG12400D-BN2MM 320g Bulk Pack 60 Part Numbering System Part Marking System Dimensions-Package D Circuit Diagram 3-M6 2.8x0.5 PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT CIRCUIT TYPE WAFER TYPE PACKAGE TYPE MG12400 D - B N2 MM VOLTAGE RATING CURRENT RATING ASSEMBLY SITE 12: 1200V 400: 400A 2x(IGBT+FWD) MG12400D-BN2MM LOT NUMBER