MG12200D-BA1MM LITTELFUSE | Alldatasheet

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Technical content

Features

Applications

  • Ultra low loss
  • High ruggedness
  • High short circuit capability
  • Positive temperature coefficient
  • With fast free-wheeling diodes Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit IGBT VCES Collector - Emitter Voltage 1200 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 300 A TC=80°C 210 A ICpuls Pulsed Collector Current TC=25°C, tp=1ms 600 ATC=80°C, tp=1ms 420 Ptot Power Dissipation Per IGBT 1400 W TJ Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C Visol Insulation Test Voltage AC, t=1min 3000 V Diode V RRM Repetitive Reverse Voltage 1200 V IF(AV) Average Forward Current TC=25°C 250 A TC=80°C 170 A IF(RMS) RMS Forward Current 250 A IFSM Non-Repetitive Surge Forward Current TJ =45°C, t=10ms, Sine 1860 ATJ =45°C, t=8.3ms, Sine 1920 Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit RthJC Junction-to-Case Thermal Resistance Per IGBT 0.09 K/W RthJCD Per Inverse Diode 0.22 K/W Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M6) 2.5 5 N·m Weight 285 g
  • Inverter
  • Converter
  • Welder
  • SMPS and UPS
  • Induction heating Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ®RoHS Agency Approvals AGENCY AGENCY FILE NUMBER E71639

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 171 MG12200D-BA1MM 1200V 200A IGBT Module Symbol Parameters Test Conditions Min Typ Max Unit IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=8mA 5.0 6.2 7. 0 V VCE(sat) Collector - Emitter Saturation Voltage IC=200A, VGE=15V , TJ=25°C 1. 8 V IC=200A, VGE=15V , TJ=125°C 2.0 V ICES Collector Leakage Current VCE=1200V , VGE=0V , TJ=25°C 0.4 1. 0 mA VCE=1200V , VGE=0V , TJ=125°C 6.0 mA IGES Gate Leakage Current VCE=0V ,VGE=±20V -400 400 nA Qge Gate Charge VCC=600V , IC=200A , VGE=±15V 2100 nC Cies Input Capacitance VCE=25V , VGE=0V , f =1MHz 14.9 nFCoes Output Capacitance 1 .04 Cres Reverse Transfer Capacitance 0.7 td(on) Turn - on Delay Time VCC=600V IC=200A RG =5Ω VGE=±15V Inductive Load TJ =25°C 125 ns TJ =125°C 135 ns tr Rise Time TJ =25°C 60 ns TJ =125°C 60 ns td(off) Turn - off Delay Time TJ =25°C 420 ns TJ =125°C 490 ns tf Fall Time TJ =25°C 60 ns TJ =125°C 75 ns Eon Turn - on Energy TJ =25°C 17 mJ TJ =125°C 24.8 mJ Eoff Turn - off Energy TJ =25°C 13.6 mJ TJ =125°C 21 .6 mJ Diode VF Forward Voltage IF=200A , VGE=0V , TJ =25°C 2.0 2.44 V IF=200A , VGE=0V , TJ =125°C 1. 7 2.20 V trr Reverse Recovery Time IF=200A , VR=800V diF/dt=-1000A/μs TJ =125°C 260 ns IRRM Max. Reverse Recovery Current 110 A Qrr Reverse Recovery Charge 13.5 μC Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 172 MG12200D-BA1MM 1200V 200A IGBT Module Figure 1: T ypical Output Characteristics 600 500 400 TJ =25°C IC (A) 300 VCE(sat)˄V˅ TJ =125°C 200 100 0 0 1 1.5 2.5 3.52 3 0.5 Figure 2: T ypical T ransfer characteristics

240 Eon Eoff (mJ)

IC˄A˅ VCC=600V RG=5ohm VGE=±15V TJ =125°C Eon Eoff 700600 500 400 200 0 Figure 3: Switching Energy vs. Collector Current 100 005 10 15 20 25 30 Eon Eoff (mJ) Eon Eoff RG˄ohm˅ VCC=600V IC=200A VGE=±15V TJ =125°C Figure 4: Switching Energy vs. Gate Resistor t (ns) 102 0 60 180 IC˄A˅ VCC=600V 101 120 240 300 360 420 RG=5ohm VGE=±15V TJ =125°C td(off) tf tr td(on) 103 Figure 5: Switching Times vs. Collector Current Figure 6: Switching Times vs. Gate Resistor 104 103 101 05 10 15 20 25 30 RG˄ohm˅ VCC=600V IC=200A VGE=±15V TJ =125°C t (ns) td(on) tf tr td(off) 102 600 VCE=20V500 400 TJ =25°C IC (A) 300 TJ =125°C200 100 VGE˄V˅ 1424 68 10 12

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 173 MG12200D-BA1MM 1200V 200A IGBT Module Figure 7: Gate Charge characteristics

25 VGE (V)

Qg˄µC˅ 0 2.0 0 0.8 1.6 1.2 0.4 VCC=600V IC=200A TJ =25°C VGE =0V f=1MHz Cies C (nF) VCE˄V˅ 30 25 20 151050 0.1 Cres Coes 100 Figure 8: T ypical Capacitances vs. VCE 00 200 600 VCE˄V˅ 1400400 800 1000 1200 100 200 300 400 500 600 700 TJ =150°C TC =25°C VGE =15V ICpuls (A) Figure 9: Reverse Biased Safe Operating Area 600 00 200 400 600 800 1000 1200 VCE˄V˅ 1400 TJ =150°C TC =25°C VGE =15V tscİ10µs 1200 0180ICsc (A) 2400 3600 3000 Figure 10: Short Circuit Safe Operating Area Figure 11: Rated Current vs. TC 350 TC Case Temperature(°C) IC(A) TJ =150°C VGE ı15V 25 0 200 150 100 300 250 50 75 125 100 150 175 TJ =25°C TJ =125°C 600 500 400 300IF (A) 200 100 VF˄V˅ Figure 12: Diode Forward Characteristics

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 175 MG12200D-BA1MM 1200V 200A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12200D-BA1MM MG12200D-BA1MM 285g Bulk Pack 60 Part Numbering System Part Marking System PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT CIRCUIT TYPE WAFER TYPE PACKAGE TYPE MG12200 D - B A1 MM VOLTAGE RATING CURRENT RATING ASSEMBLY SITE 12: 1200V 200: 200A 2x(IGBT+FWD) MG12200D-BA1MM LOT NUMBER 5 764 3 2