MG12105S-BA1MM LITTELFUSE | Alldatasheet

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Technical content

Features

Applications

  • Ultra Low Loss
  • High Ruggedness
  • High Short Circuit Capability
  • Positive Temperature Coefficient
  • With Fast Free-Wheeling Diodes Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit IGBT VCES Collector - Emitter Voltage 1200 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 150 A TC=80°C 105 A ICpuls Pulsed Collector Current TC=25°C, tp=1ms 300 ATC=80°C, tp=1ms 210 Ptot Power Dissipation Per IGBT 690 W TJ Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C Visol Insulation Test Voltage AC, t=1min 3000 V Diode V RRM Repetitive Reverse Voltage 1200 V IF(AV) Average Forward Current TC=25°C 125 A TC=80°C 85 A IF(RMS) RMS Forward Current 122 A IFSM Non-Repetitive Surge Forward Current TJ =45°C, t=10ms, Sine 930 ATJ =45°C, t=8.3ms, Sine 980 Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit RthJC Junction-to-Case Thermal Resistance Per IGBT 0.18 K/W RthJCD Per Inverse Diode 0.45 K/W Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M5) 2.5 5 N·m Weight 150 g
  • Inverter
  • Converter
  • Welder
  • SMPS and UPS
  • Induction Heating Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ®RoHS AGENCY AGENCY FILE NUMBER E71639 Agency Approvals

©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 MG12105S-BA1MM 1200V 100A IGBT Module Symbol Parameters Test Conditions Min Typ Max Unit IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=4mA 5.0 6.2 7. 0 V VCE(sat) Collector - Emitter Saturation Voltage IC=100A, VGE=15V , TJ=25°C 1. 8 V IC=100A, VGE=15V , TJ=125°C 2.0 V ICES Collector Leakage Current VCE=1200V , VGE=0V , TJ=25°C 0.2 0.5 mA VCE=1200V , VGE=0V , TJ=125°C 3 mA IGES Gate Leakage Current VCE=0V ,VGE=±20V -200 200 nA Qge Gate Charge VCC=600V , IC=100A , VGE=±15V 1050 nC Cies Input Capacitance VCE=25V , VGE=0V , f =1MHz 7 .43 nFCoes Output Capacitance 0.52 Cres Reverse Transfer Capacitance 0.34 td(on) Turn - on Delay Time VCC=600V IC=100A RG =10Ω VGE=±15V Inductive Load TJ =25°C 125 ns TJ =125°C 135 ns tr Rise Time TJ =25°C 60 ns TJ =125°C 60 ns td(off) Turn - off Delay Time TJ =25°C 420 ns TJ =125°C 490 ns tf Fall Time TJ =25°C 60 ns TJ =125°C 75 ns Eon Turn - on Energy TJ =25°C 8.6 mJ TJ =125°C 12.4 mJ Eoff Turn - off Energy TJ =25°C 6.8 mJ TJ =125°C 10.8 mJ Diode VF Forward Voltage IF=100A , VGE=0V , TJ =25°C 2.0 2.44 V IF=100A , VGE=0V , TJ =125°C 1. 7 2.20 V trr Reverse Recovery Time IF=100A , VR=800V diF/dt=-1000A/μs TJ =125°C 220 ns IRRM Max. Reverse Recovery Current 85 A Qrr Reverse Recovery Charge 9.8 μC Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)

©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 MG12105S-BA1MM 1200V 100A IGBT Module Figure 1: T ypical Output Characteristics 300 250 200 TJ =25°C IC (A) 150 VCE(sat)˄V˅ TJ =125°C 100 0 0 1 1.5 2.5 3.52 3 0.5 Figure 2: T ypical T ransfer characteristics

120 Eon Eoff (mJ)

IC˄A˅ VCC=600V RG=10ohm VGE=±15V TJ =125°C Eon Eoff 350300 250 200 100 0 Figure 3: Switching Energy vs. Collector Current 001 0 20 30 40 50 60 Eon Eoff (mJ) Eon Eoff RG˄ohm˅ VCC=600V IC=100A VGE=±15V TJ =125°C Figure 4: Switching Energy vs. Gate Resistor t (ns) 100 0 30 90 IC˄A˅ VCC=600V RG=10ohm VGE=±15V TJ =125°C td(off) tf tr td(on) 210180 150 120 60 10 1000 Figure 5: Switching Times vs. Collector Current Figure 6: Switching Times vs. Gate Resistor td(off) 1000 1005 10 15 20 25 30 RG˄ohm˅ VCC=600V IC=100A VGE=±15V TJ =125°C t (ns) tr tf td(on) 100 300 VCE=20V250 200 TJ =25°C IC (A) 150 TJ =125°C100 VGE˄V˅ 1424 68 10 12

©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 MG12105S-BA1MM 1200V 100A IGBT Module Figure 7: Gate Charge characteristics

25 VGE (V)

Qg˄µC˅ 0 1.0 0 0.4 0.8 0.6 0.2 VCC=600V IC=100A TJ =25°C C (nF) VCE˄V˅ 30 25 20 151050 0.1 Cres Coes VGE =0V f=1MHz Cies Figure 8: T ypical Capacitances vs. VCE 00 200 600 VCE˄V˅ 1400400 800 1000 1200 100 150 200 250 TJ =150°C TC =25°C VGE =15V 300 350 ICpuls (A) Figure 9: Reverse Biased Safe Operating Area 300 002 00 400 600 800 1000 1200 VCE˄V˅ 1400 TJ =150°C TC =25°C VGE =15V tscİ10µs 600 900 120 1800 1500 ICsc (A) Figure 10: Short Circuit Safe Operating Area Figure 11: Rated Current vs. TC 175 TC Case Temperature(°C) IC(A) TJ =150°C VGE ı15V 25 0 100 150 125 50 75 125 100 150 175 TJ =25°C TJ =125°C 300 250 200 150IF (A) 100 VF˄V˅ Figure 12: Diode Forward Characteristics

©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 MG12105S-BA1MM 1200V 100A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12105S-BA1MM MG12105S-BA1MM 150g Bulk Pack 100 Part Numbering System Part Marking System PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT CIRCUIT TYPE WAFER TYPE PACKAGE TYPE MG12 105 S - B A1 MM VOLTAGE RATING CURRENT RATING ASSEMBLY SITE 12: 1200V 105: 105A S: Package S B: 2x(IGBT+FWD) MG12105S-BA1MM LOT NUMBER Space reserved for QR code