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  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content

Features

Applications

  • High lev el of integration
  • IGBT3 CHIP(Trench+Field Stop technology)
  • Lo w saturation voltage and positive temperature coefficient
  • Fast switc hing and short tail current
  • Free wheeling diodes with f ast and soft reverse recovery
  • Solderable pins for PCB mounting Temperat ure sense included
  • AC motor control
  • Motion/serv o control
  • In verter and power supplies Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit IGBT VCES Collector - Emitter Voltage TJ=25°C 1200 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 140 A TC=80°C 100 A ICM Repetitive Peak Collector Current tp=1ms 200 A Ptot Power Dissipation Per IGBT 450 W Diode VRRM Repetitive Reverse Voltage TJ=25°C 1200 V IF(AV) Average Forward Current TC=25°C 140 A TC=80°C 100 A IFRM Repetitive Peak Forward Current tp=1ms 200 A I2t TJ =125°C, t=10ms, VR=0V 1850 A2s Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit TJ max) Max. Junction Temperature 150 °C TJ op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage AC, t=1min 3000 V CTI Comparative Tracking Index 250 Md Mounting Torque Recommended (M5) 2.5 5 N·m Weight 300 g MG12100W-XN2MM

©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 MG12100W-XN2MM 1200V 100A IGBT Module Symbol Parameters Test Conditions Min Typ Max Unit IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=4.0mA 5.0 5.8 6.5 V VCE(sat) Collector - Emitter IC=100A, VGE=15V , TJ=25°C 1. 7 V Saturation Voltage IC=100A, VGE=15V , TJ=125°C 1. 9 V IICES Collector Leakage Current VCE=1200V , VGE=0V , TJ=25°C 1 mA VCE=1200V , VGE=0V , TJ=125°C 10 mA IGES Gate Leakage Current VCE=0V , VGE=±15V , TJ=125°C -400 400 nA RGint Integrated Gate Resistor 7. 5 Ω Qge Gate Charge VCE=600V , IC=100A , VGE=±15V 0.9 μC Cies Input Capacitance VCE=25V , VGE=0V , f =1MHz 7. 1 nF CRES Reverse Transfer Capacitance 0.3 nF td(on) Turn - on Delay Time VCC=600V IC=100A RG =3.9Ω VGE=±15V Inductive Load TJ=25°C 260 ns TJ=125°C 290 ns tr Rise Time TJ=25°C 30 ns TJ=125°C 50 ns td(off) Turn - off Delay Time TJ=25°C 420 ns TJ=125°C 520 ns tf Fall Time TJ=25°C 70 ns TJ=125°C 90 ns Eon Turn - on Energy TJ=25°C 7. 8 mJ TJ=125°C 10 mJ Eoff Turn - off Energy TJ=25°C 8 mJ TJ=125°C 10 mJ ISC Short Circuit Current t psc≤10μS , VGE=15V; TJ=125°C , VCC=900V 400 A RthJC Junction-to-Case Thermal Resistance (Per IGBT) 0.28 K/W Diode VF Forward Voltage IF=100A, VGE=0V , TJ =25°C 1 .65 V IF=100A, VGE=0V , TJ =125°C 1 .65 V tRR Reverse Recovery Time IF=100A, VR=600V diF/dt=2400A/µs TJ=125°C 320 ns IRRM Max. Reverse Recovery Current 105 A Erec Reverse Recovery Energy 9.5 mJ RthJCD Junction-to-Case Thermal Resistance (Per Diode) 0.5 K/W Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit R25 Resistance Tc=25°C 5 KΩ B25/50 3375 K

©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 MG12100W-XN2MM 1200V 100A IGBT Module Figure 1: T ypical Output Characteristics f or IGBT Inverter Figure 2: T ypical Output Characteristics f or IGBT Inverter VGE˄V˅ IC (A) 200 Tj =125°C Tj =25°C VCE =20V 1210 9 7 6 5 8 11 120 160 Figure 3: T ypical T ransfer Characteristics f or IGBT Inverter 004 8 16 24 Eon Eoff (mJ) Eon Eoff RG˄Ω ˅ VCE=600V IC=100A VGE=±15V Tj =125°C 12 20 32 3628 Figure 4: Switching Energy vs. Gate Resistor for IGBT Inverter 0 50 IC˄A˅ VCE=600V RG=3.9Ω VGE=±15V Tj =125°C 200100 Eoff Eon

30 Eon Eoff (mJ) 20

Figure 5: Switching Energy vs. Collector Current f or IGBT Inverter Figure 6: Reverse Biased Saf e Operating Area for IGBT Inverter 100 200 250 0 200 400 6008 00 1000 1200 VCE˄V˅ 1400 RG=3.9Ω VGE=±15V Tj =125°C IC (A) 150 VCE˄V˅ IC (A) TJ =125°C 2.04 .5 5.00 GEV =11V GEV = 9V GEV =13V GEV =15V GEV =17V GEV =19V 200 160 120 IC (A) VCE˄V˅ Tj =125°C Tj =25°C 200 160 VGE =15V 3.5 120

©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 MG12100W-XN2MM 1200V 100A IGBT Module Part Numbering System Part Marking System PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT CIRCUIT TYPE WAFER TYPE PACKAGE TYPE MG12100 W-X N2MM VOLTAGE RATING CURRENT RATING ASSEMBLY SITE 12: 1200V 100: 100A W: Package W X: X LOT NUMBER Space reserved for QR code MG12100W-XN2MM Circuit Diagram Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12100W-XN2MM MG12100W-XN2MM 300g Bulk Pack 20

©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 MG12100W-XN2MM 1200V 100A IGBT Module Dimensions-Package W Ø Dimensions (mm)