MG12100D-BA1MM

MG12100D-BA1MM LITTELFUSE | Alldatasheet

Document overview

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• PDF pages: 6

Technical content

Features

Applications

• Ultra low loss
• High ruggedness
• High short circuit capability
• Positive temperature coefficient
• With fast free-wheeling diodes Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit IGBT VCES Collector - Emitter Voltage 1200 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 160 A TC=80°C 100 A ICpuls Pulsed Collector Current TC=25°C, tp=1ms 340 ATC=80°C, tp=1ms 220 Ptot Power Dissipation Per IGBT 1000 W TJ Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C Visol Insulation Test Voltage AC, t=1min 3000 V Diode V RRM Repetitive Reverse Voltage 1200 V IF(AV) Average Forward Current TC=25°C 180 A TC=80°C 120 A IF(RMS) RMS Forward Current 180 A IFSM Non-Repetitive Surge Forward Current TJ =45°C, t=10ms, Sine 860 ATJ =45°C, t=8.3ms, Sine 900 Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit RthJC Junction-to-Case Thermal Resistance Per IGBT 0.15 K/W RthJCD Per Inverse Diode 0.30 K/W Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M5) 2.5 5 N·m Weight 285 g
• Inverter
• Converter
• Welder
• SMPS and UPS
• Induction heating Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ®RoHS Agency Approvals AGENCY AGENCY FILE NUMBER E71639

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 MG12100D-BA1MM 1200V 100A IGBT Module Symbol Parameters Test Conditions Min Typ Max Unit IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=4mA 5.0 6.2 7. 0 V VCE(sat) Collector - Emitter Saturation Voltage IC=100A, VGE=15V , TJ=25°C 1. 8 V IC=100A, VGE=15V , TJ=125°C 2.0 V ICES Collector Leakage Current VCE=1200V , VGE=0V , TJ=25°C 1 mA VCE=1200V , VGE=0V , TJ=125°C 4 mA IGES Gate Leakage Current VCE=0V ,VGE=±20V -400 400 nA Qge Gate Charge VCC=600V , IC=100A , VGE=±15V 1200 nC Cies Input Capacitance VCE=25V , VGE=0V , f =1MHz 8.58 nFCoes Output Capacitance 0.6 Cres Reverse Transfer Capacitance 0.4 td(on) Turn - on Delay Time VCC=600V IC=100A RG =9Ω VGE=±15V Inductive Load TJ =25°C 270 ns TJ =125°C 290 ns tr Rise Time TJ =25°C 60 ns TJ =125°C 60 ns td(off) Turn - off Delay Time TJ =25°C 480 ns TJ =125°C 550 ns tf Fall Time TJ =25°C 60 ns TJ =125°C 65 ns Eon Turn - on Energy TJ =25°C 12 mJ TJ =125°C 16.8 mJ Eoff Turn - off Energy TJ =25°C 7. 4 mJ TJ =125°C 11. 6 mJ Diode VF Forward Voltage IF=100A , VGE=0V , TJ =25°C 1. 9 2.3 V IF=100A , VGE=0V , TJ =125°C 1. 7 2.1 V trr Reverse Recovery Time IF=100A , VR=800V diF/dt=-1000A/μs TJ =125°C 230 ns IRRM Max. Reverse Recovery Current 80 A Qrr Reverse Recovery Charge 9.7 μC Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 MG12100D-BA1MM 1200V 100A IGBT Module Figure 1: T ypical Output Characteristics 200 160 TJ =25°C

120 IC (A)

VCE(sat)˄V˅ TJ =125°C 0 0 1 1.5 2.5 3.52 3 0.5 Figure 2: T ypical T ransfer characteristics

120 Eon Eoff (mJ)

IC˄A˅ VCC=600V RG=18ohm VGE=±15V TJ =125°C Eon Eoff 350300 250200 100 0 Figure 3: Switching Energy vs. Collector Current 005 10 15 20 25 30 Eon Eoff (mJ) Eon Eoff RG˄ohm˅ VCC=600V IC=50A VGE=±15V TJ =125°C Figure 4: Switching Energy vs. Gate Resistor t (ns) 102 0 40 120 I ˄A˅ VCC=600V RG=9ohm VGE=±15V TJ =125°C td(off) tf tr td(on) 280240 200 160 80 10 103 Figure 5: Switching Times vs. Collector Current Figure 6: Switching Times vs. Gate Resistor td(on) td(off) 103 1005 10 15 20 25 30 RG˄ohm˅ VCC=600V IC=100A VGE=±15V TJ =125°C t (ns) tf tr 102 200 160 VCE=20V 120IC (A) TJ =125°C TJ =25°C VGE˄V˅ 1424 68 10 12

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 MG12100D-BA1MM 1200V 100A IGBT Module Figure 7: Gate Charge characteristics

25 VGE (V)

Qg˄µC˅ 0 0 VCC=600V IC=100A TJ =25°C C (nF) VCE˄V˅ VGE =0V f=1MHz Cies Coes Cres 0.1 0 51 01 52 0 25 30 35 Figure 8: T ypical Capacitances vs. VCE ICpuls (A) TJ =150°C TC =25°C VGE =15V 400 320 240 160 00 200 600 VCE˄V˅ 140012001000 800 400 Figure 9: Reverse Biased Safe Operating Area 2000 1600 1200 800 400 00 200 400 6008 00 1000 1200 VCE˄V˅ 1400 ICsc (A) TJ =150°C TC =25°C VGE =15V tscİ10µs Figure 10: Short Circuit Safe Operating Area Figure 11: Rated Current vs. TC TC Case Temperature(°C) IC(A) TJ =150°C VGE ı15V 0 125 150 17550 75 100 200 120 160 0 25 TJ =25°C TJ =125°C VF˄V˅ 150 200 300 250 0.5 100 IF (A) Figure 12: Diode Forward Characteristics

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:07/21/16 MG12100D-BA1MM 1200V 100A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q MG12100D-BA1MM MG12100D-BA1MM 285g Bulk Pack 60 Part Numbering System Part Marking System PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT CIRCUIT TYPE WAFER TYPE PACKAGE TYPE MG12100 D - B A1 MM VOLTAGE RATING CURRENT RATING ASSEMBLY SITE 12: 1200V 100: 100A 2x(IGBT+FWD) MG12100D-BA1MM LOT NUMBER 5 764 3 2