MG120V2YS40 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS arasToN-tas #110 £2. 82 4-¢ 6.50.3 Ser os = © The Electrodes are Isolated from Case. og cS, rule! felt ts $2 ele © High Input Impedance FAL [| Rete &) 8) 3! JAPAN’ FAL | ay ot © Includes a Complete Half Bridge in One oO | et Package. 80208 at 93 £03 i @ Enhancement-Mode jostos © High Speed : tp=1.5s (Max.) (I¢=120A) 4920.6 ter =0.6s (Max.) (Ip=120A) " Perigo 5) _sat0s 3403, 3403 8) Po on EQUIVALENT CIRCUIT e q 3 ae 3 C1 E2 60+08 ] ] JEDEC od Gy EL/Ce Ge TOSHIBA 2-94C1A Weight : 430g (Typ.) MAXIMUM RATINGS (Ta = 25°C) Collector-Emitter Voltage VcEs 1700 Gate Emitter Voltage Vers [pe [te od Collector Current Ic A [ims [top [ao Forward Current A | ams | tw | ado Collector Power Dissipation (Te=25°0) [ro | 0 Tw Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 4000(AC 1 min.) Screw Torque (Terminal /Mounting) Pea | 261001 a2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or ‘all due to their inherent electrical Sensitivity and vulnerability to physical Stress. is the responsibilty of the buyer, when lang TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your, designs, please ensure that TOSHIBA. products are, used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibilty is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property -or other rights of the third parties which may result from Its use. NO license’ Is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Ven=+20v, Von=0 | — | — [+100] na | Collector Cut-off Current Ices _|Vor=1700V, Vgn=0 | — | — | 1] ma | Gate-Emitter Cut-off Voltage Ig=120mA, VoR=5V [40 | — | sol v | Collector-Emitter Saturation Voltage VCR (sat) |10=120A, VGB=18V |= | ae| as] v | . VcE=10V, VGE=0, [Turn-on Delay Time| ta (on) | ayet |= | o1] — | - Inductive Load Voc=900V |= | of — | Switching Ig=120A | — | os] — | Time Van= +15v [= [oat = | ” Fall Time way | — | o5] 15] fo) Forward Voltage Ip=120A, Von=0 | — | ss] 45] v | . Ip=120A, VgE=—15V Reverse Recovery Time ter di/dt=500A/ ns (Note 1) 0.3 us ; Transistor Stage | — [| — | oso], Thermal Resistance Rth (-c) ~ Ci W Diode Stage P= [= | 025] Note 1 Switching Time and Reverse Recovery Time Test Circuit & Timing Chart Rg VCE on Ic {]__L Voc Ig i ty | | Rg T 90% 90% ow Vor iA\\ i fi Now t0%if! 10% 10%if | 110% td (off)} | tte td(on)} ta} | itt | 1 ! “FA 90% Ter ' toff ‘ton | Ter 50% Ipp Ip -----f----- Ip| /i tr terl 1997-03-03 2/5

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"CECA TT "COTA a EOP 2 LOE E {tt Ty tT E A | 2 2 = ST rccnes PT ee E ‘COURSES eS 5 ee GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) s 1. VCE — VGE 240, Ic — VGE re i el es e ELT | fe z sf |) Pel | ee g 7 r_] : i eA titi tt es BLE TUN Fema] oe S }} Se e/a ge 4 ae | 3 50 / ee 8 FT crater GATE-EMITTER VOLTAGE Vgg (V) GATE-EMITTER VOLTAGE Vgg (V) 1997-03-03 3/5

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© OC § FARA Bl cie8c FEE 2 yet CEPR § ) cece” LUE Rg=470 PEEP ire Ty | °5> goa 400600800 1000 1200 1400 1600 1800 COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-03-03 5/5