MG1200FXF1US51 TOSHIBA | Alldatasheet

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TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications /Gb7/G20High input impedance /Gb7/G20Enhancement mode /Gb7/G20Electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 3300 V Gate-emitter voltage V GES /Gb120 V DC I C 1200 A Collector current 1 ms I CP 2400 A Peak 1 cycle surge current 10 ms (half sine) I FSM 10 /G20 kA Operating junction temperature T j /G2d40~125 °C Storage temperature range T stg /G2d40~125 °C Isolation voltage V Isol 6000 (AC 1 min) V Terminal: M4/M8 2/7 Screw torque Mounting /Gbe Nm Caution: MG1200FXF1US51 has no short-circuit capability. Preliminary C G C C C E E E E

Electrical Characteristics (Tvj /G3d/G3d/G3d/G3d 125°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE /G3d /Gb120 V, VCE /G3d 0 V /Gbe /Gbe /Gb150 nA Collector cut-off current I CES V CE /G3d 3300 V, VGE /G3d 0 V /Gbe 75 100 mA Gate-emitter cut-off voltage V GE (off) V CE /G3d 5 V, IC /G3d 1.2 A /Gbe/G204.4 /Gbe V Collector-emitter saturation voltage V CE (sat) I C /G3d 1200 A, VGE /G3d 15 V /Gbe/G204.6 5.3 V Input capacitance C ies V CE /G3d 10 V, VGE /G3d 0 V, f /G3d 100 kHz /Gbe/G20230 /Gbe nF Rise time t r /Gbe/G202.1 /Gbe/G20 /G6ds Turn-on time t on /Gbe/G200.3 /Gbe/G20 /G6ds Fall time t f /Gbe/G204.0 /Gbe/G20 /G6ds Switching time Turn-off time t off VCC /G3d 1800 V, IC /G3d 1200 A, VGG /G3d /Gb115 V, CGE /G3d 0.1 /G6dF, RG (on)/(off) /G3d 3.9/3.3 /G57/G20 (dic/dt (on) /G7e/G2d4900 A//G6ds) (Inductive load, Ls /G7e/G2d160 nH) /Gbe/G201.8 /Gbe/G20 /G6ds Forward voltage of diode V F I F /G3d 1200 A, VGE /G3d 0 V /Gbe/G203.5 4.0 V Reverse recovery charge Q rr /Gbe/G201000 /Gbe /G6dC Peak reverse recovery current I rr IF /G3d 1200 A, VGG /G3d /G2d15 V, diF/dt /G7e/G2d/G2d4900 A//G6ds, VCC /G3d 1800 V /Gbe/G201500 /Gbe A turn-on loss E on /Gbe/G202.2 2.8 J turn-off loss E off VCC /G3d 1800 V, IC /G3d 1200 A, VGG /G3d /Gb115 V, CGE /G3d 0.1 /G6dF, RG (on)/(off) /G3d 3.9/3.3 /G57/G20 (dic/dt (on) /G7e/G2d4900 A//G6ds) (Inductive load, Ls /G7e/G2d160 nH) /Gbe/G202.0 3.0 J Switching dissipation Diode reverse recovery loss Edsw IF /G3d 1200 A, VGG /G3d /G2d15 V, diF/dt /G7e/G2d/G2d4900 A//G6ds, VCC /G3d 1800 V /Gbe/G201.0 1.5 J Thermal Resistance (Tc /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Transistor (IGBT) stage /Gbe /Gbe 8.0 Rth (j-c) Diode stage /Gbe /Gbe 16.0Thermal Resistance Rth (c-f) Per module (Note 1) /Gbe 6.0 /Gbe °C/kW Note 1: Toshiba silicone’s YG6260 heat radiation grease is recommended for use with semiconductor devices. Apply a thin, even (100-to-200-/G6dm) coating of grease.

Reverse recovery energy E dsw (J) Turn-off loss per a pulse E off (J) Collector-emitter voltage V CE ( V ) I C – VCE (typ.) Collector current I C (A) Forward voltage V F (V) I F – VF (typ.) Forward current I F (A) Collector current I C (A) E on – IC (typ.) Turn-on loss per a pulse E on (J) Collector current I C (A) Eoff – IC (typ.) Forward current I F (A) E dsw – IF (typ.) Time t (s) Rth – t (max) Transient thermal resistance R th(j-c) ( °C/kw) VGE /G3d /G2b15 V Tvj /G3d 25°C 125°C 0 2 4 6 8 500 1000 1500 2000 2500 0 500 1000 1500 0.5 1.0 1.5 2.0 2.5 VCC /G3d 1800 V RG /G3d 3.3 /G57 CGE /G3d 0.1 /G6dF Ls /G3d 160 nH VGE /G3d /G2b//G2d15 V Tvj /G3d 125°C 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 Diode-stage IGBT-stage 0.00003 Tvj /G3d 25°C 125°C 0 2 4 6 500 1000 1500 2000 2500 0 500 1000 1500 0.4 0.6 0.8 1.0 1.2 VCC /G3d 1800 V di/dt /G3d 4900 A//G6ds Ls /G3d 160 nH VGE /G3d /G2d15 V Tvj /G3d 125°C 0.2 0.5 1.0 1.5 2.0 2.5 VCC /G3d 1800 V RG /G3d 3.9 /G57 CGE /G3d 0.1 /G6dF Ls /G3d 160 nH VGE /G3d /G2b//G2d15 V Tvj /G3d 125°C 0 500 1000 1500

Package Dimensions: 2-193A1A Unit: mm

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE