MG10Q6ES50A

MG10Q6ES50A TOSHIBA | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS. 6 mse, 2 60.96 = yo ro et 50” 0 - @ The Electrodes are Isolated from Case. al she in a te a a . eiaics Lal amy Is @ = High Input Impedance. ey salle) | | © 6 IGBTs Built Into 1 Package. Yr [OTe ae sel re gigs 12] 5 agttos,] | i jp 155205) EQUIVALENT CIRCUIT ! Grisso. 160205, 5715205 | 93.0 +0.5 aoe | | = 1o— 50 904 int tate! 405.0205 : ar 20 ou [asi “4 60 oV & eis Bs 100° ow JEDEC _— sof ro Uf ie 8] 40 80 120 oN TOSHIBA 2-108E2A Weight : 185g O61001 EAA @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent’ products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or_other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-06-10 1/7

MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Collector-Emitter Voltage Voss [| 1200 [| V | Gate-Emitter Voltage VGES | Pleven) 7° | A | DC 15/10 A 25°C / 80° Collector Current i co o°C) Forward Curent | pu [ ge [a J Collector Power Dissipation Storage Temperature Range —40~125 : 2500 [Screw Torque dN | ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [san. | rye. [Max.|unrr] Gate Leakage Current IGES VGE=+20V, Vcg=0 | — | — [+500 Collector Cut-Off Current IcES VcE=1200V, Von=0 [| — | — | 05] ma | Gate-Emitter Cut-Off Voltage Ic=10mA, VoR=5V | 3.0 | — | 60] V | Collector-Emitter Saturation V I¢=10A, Tj=25°C | — | 28] 3.2] y Voltage CE (sat) | vqp=15V Tj=12580; — | 31 37] Tnput Capacitance Wop=10V, Vog=0. f=iMiiz | — | a200[ — [a] Voo=600¥ b= [oor] os) Switching Too Oe gv | = [015] 030] Turn-Off Time Tj=125°C (ote | = | 0.60] 0.90 | Forward Voltage Tp=I0A, Vgp=0 [=| 22} 30] v1 . Ip=10A, Vgp=—10V, Reverse Recovery Time ter de /at==1508 os 0.10 ys Thermal Resistance [Rinse Bisa fF = fem 1998-06-10 2/7

(Note 1) Switching Time Test Circuit & Timing Chart VGE Rg 1 - ceo r0%/ \\:90% Tcl] L Voc ! ' | Rg oy c 1 F90% r490% 10%! i LN c0% Pa ite i fhe ton toff 1998-06-10 3/7

20 Ic — VCE 20 Ic — VCE

ar) Ae am WT 7 {| yt] > fy / > J 2 ayy 2 do a e Ll [ery e [ll ms7 |i tl ee 7 oes /aneee ee eee ee Zoe Se SLY |_| common exrrren ‘Depa | | pees LAT we | WAR 0 2 4 6 0 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE VcE (V) Ss VCE - VGE S16 Vcr - VGE 5 5 oe ry COMMON EMITTER - Lt TT COMMON EMITTER eT TTT =e eT LL

27 TE TT TT 2" TT TT

: ee : on 2 8 2 8 E ef Pp E fA # [||| IIN 8 fT A Ree J - Lt icezon_| | : eet

2 CLIT IIT] 2 TTT TT {7

5 % 4 8 12 16 20 5 % 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE Vgg (V) 5 16 VCE - VGE 20 Ic - VGE © TUT) como marnen [TLE PZk 14 PTCA EA = 1 a FE TLL IW ET e Li lig ey Ty E es aT] DI kee] eee) ae 5 ‘CESSES 3 iit ye g er 8 Tf APTS eowwow nurrren

2 COUT 11 LT scene

° % 4 8 12 16 20 % 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) 1998-06-10 4/7

A 6ES5O. MG10Q TOS - iG TIME — — SS See See Saeiiee POSE mae : - [TT I Lo scien f SWITCHING eae | i = EH mae SS eciiccaen it an M4 | Ht alll = Ll to Hi os et ime Sette ct val f ton : See eee a : = 7 z | maaan BPs mi 4 Ce Ff : fares eeeee i : ) O.1 easel Eo | > pa Li tt HHH | i g means [| i : | ail g ee CO E eae

2 LAT] eerie eat i

: Still 7 ae : a a E44 FAT counows an si 5 ml Seat Sei = | = — hl ee : Seri meeeiil : = oot EH Se = | H 1 ‘MITT! ett one LH coma _ ft Ht E Rg (Q) | — | = im my Ld 10 ) Sst eSeeee IT Ig (A) ae |

0.0011 ECTOR-CURREN’ 10 Seer

=i — Saas [fT 4 = | 4 mana L - a naan a =a : ‘0 See eee , “tt a f+ rT on H ‘a EEE in HH : Z i a Coo [| Ie A EH hl 4 ee : me mai tae ee HD! uaa g ati om oy Po E re = - || ane | Tr RES, = ot eee ae Sot | & | : ia ar ail i i z Cedi CT | | t— : t— Q) DB HHH Frit C

3 AN i ll

. . Saesiiensrti Seri EMITTER = +H MMO! [oF como HH yee tay ceri ae H = vheieo ; (A) ° RRENT Ic.

7 COLLECTOR-CUI

10000, c= Yoe 800; Yor, Var = aa 16 Fcc EY It | fe i Ete Hl 2 tt ttm A Alte 8

2 SS Sn En | ~arsFe7 | | | il | 3

So Nee TALIA [| comoxmaren | at SSE Cc oo = ise (Se 3 1 a a sol eae Conn cot 2 ~NEE rr LT ti} itt tty é COLLECTOR-EMITTER VOLTAGE Vcg (V) 0 20 40 60 80 100 CHARGE Qg (nC)

20 Ip - VF < ter, Irr, Edsw - IF

= se a Ses Sa SS SS | ee oof fw Lg ee see eee A ee ee = == e Lit ify tty ty =: ESS 2 | yf Se3 ,,_ L-L-b ert

2 Po ee

tly ll VoE=0V Pe | [orien [| st/at= 1508 ps 0 1 2 3 4 5 go 2 4 6 8 10 FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip (A) SHORT CIRCUIT SOA 1000

2 Ptr thet © Fee

2 LOU oer A ==—— ==

gS te ae <i tt SE oe 5 a Be Reet tt ¢ tPPteetet tee 22 of LUM TUM TTI ETT Ett ttt

2 GHA 8 pee EEE EEE EH

Bg beezee FTE CI TT [ste TTT I PULSE WIDTH tw (s) COLLECTOR-EMITTER VOLTAGE Vcg (V) 1998-06-10 6/7

PEER ESE ERR < eS > Ape ot Tt @ GEESE ESSESES RS s a A SO 8 es BLL Bo se as ee | Beers. FEEEEEEEEE Vor=+15V besa’ FEET ‘0 300 400 600 600 1000 1200 1400 COLLECTOR-EMITTER VOLTAGE Vog (V) 1998-06-10 7/7