MG1001 MICROSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • CW Designs to 500 mW
  • Pulsed Designs to 10 W
  • Frequency Coverage Specified from 5.9–95 GHz
  • Low Phase Noise
  • High Reliability

Applications

  • Motion Detectors
  • Transmitters and Receivers
  • Beacons
  • Automotive Collision Avoidance Radars
  • Radars
  • Radiometers
  • Instrumentation

Description

Microsemi’s GaAs Gunn di odes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. MDT Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5–110 GHz.

MG1001 – MG1061 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 TM ® GUNN Diodes Cathode Heat Sink Copyright  2008 Rev: 2009-01-19 (Discrete Frequency: Cathode Heatsink) C Band Gunn Diodes (Specifications @ 25°C) Operating Current Part Number Operating Frequency1 (GHz) Min. Power2 (mW) Typ. Operating Voltage (V) Min. (mA) Max. (mA) Package Outline3 MG1001-11 5.9–8.2 50 12 200 400 M11 MG1002-11 5.9–8.2 100 12 300 600 M11 MG1003-15 5.9–8.2 250 12 600 1100 M15 MG1004-15 5.9–8.2 500 12 900 1300 M15 X Band Gunn Diodes (Specifications @ 25°C) Operating Current Part Number Operating Frequen y 1 c (GHz) Min. Power2 (mW) Typ. Operating Voltage (V) Min. (mA) Max. (mA) Package Outline3 MG1005-11 8.2–12.0 50 10 200 400 M11 MG1006-11 8.2–12.0 100 10 400 700 M11 MG1007-15 8.2–12.0 250 10 700 1200 M15 MG1008-15 8.2–12.0 500 10 1000 1600 M15 Ku Band Gunn Diodes (Specifications @ 25°C) Operating Current Part Number Operating Frequency1 (GHz) Min. Power2 (mW) Typ. Operating Voltage (V) Min. (mA) Max. (mA) Package Outline3 MG1009-11 12.4–18.0 50 8 300 500 M11 MG1010-11 12.4–18.0 100 8 400 800 M11 MG1011-15 12.4–18.0 250 8 800 1200 M15 MG1012-15 12.4–18.0 500 8 1100 1700 M15 K Band Gunn Diodes (Specifications @ 25°C) Operating Current Part Number Operating Frequency1 (GHz) Min. Power2 (mW) Typ. Operating Voltage (V) Min. (mA) Max. (mA) Package Outline3 MG1013-16 18.0–26.5 50 6 400 600 M16 MG1014-16 18.0–26.5 100 6 500 1000 M16 MG1015-16 18.0–26.5 200 6 800 1400 M16 MG1016-17 18.0–23.0 400 6 900 1700 M17 1 Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown. Additional frequencies are available; Please contact the factory. 2 Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 µS, duty factor = 1% typ. 3 Polarity: anode is the cap and cathode is the heatsink.

MG1001 – MG1061 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3 TM ® GUNN Diodes Cathode Heat Sink Copyright  2008 Rev: 2009-01-19 Gunn Diodes (Discrete Frequency: Cathode Heatsink) Ka Band Gunn Diodes (Specifications @ 25°C) Operating Current Part Number Operating Frequency1 (GHz) Min. Power2 (mW) Typ. Operating Voltage (V) Min. (mA) Max. (mA) Package Outline3 MG1017-16 26.5–40.0 50 4.5 300 700 M16 MG1018-16 26.5–40.0 100 4.5 600 1100 M16 MG1019-16 26.5–40.0 200 5.0 800 1400 M16 MG1020-16 26.5–40.0 250 5.5 800 1600 M16 MG1039-16 26.5–35.0 300 5.5 1000 1700 M16 MG1040-16 26.5–35.0 350 5.5 1000 1800 M16 U Band Gunn Diodes (Specifications @ 25°C) Operating Current Part Number Operating Frequen y 1 c (GHz) Min. Power2 (mW) Typ. Operating Voltage (V) Min. (mA) Max. (mA) Package Outline3 MG1021-16 40.0–60.0 50 4 400 800 M16 MG1022-16 40.0–60.0 100 4 700 1200 M16 MG1023-16 40.0–50.0 150 4 800 1600 M16 V and W Band Gunn Diodes (Specifications @ 25°C) Operating Current Part Number Operating Frequen y 1 c (GHz) Min. Power2 (mW) Typ. Operating Voltage (V) Min. (mA) Max. (mA) Package Outline3 MG1036-16 60.5–85.0 10 4.5 400 900 M16 MG1037-16 60.5–85.0 50 5 500 1100 M16 MG1024-16 85–95 10 4.5 450 1100 M16 MG1025-16 85–95 20 4.5 500 1000 M16 MG1038-16 85–95 50 5 450 1200 M16 High Power Pulsed Gunn Diodes (Specifications @ 25°C) Part Number Operating Frequency1 (GHz) Min. Power2 (mW) Typ. Operating Voltage (V) Typ. Operating Current (Amps.) Package Outline3 MG1034-15 9.3 5 35 8 M15 Stacked Pulsed Gunn Diodes (Specifications @ 25°C) Part Number Operating Frequen y 1 c (GHz) Min. Power2 (Watts) Typ. Operating Voltage (V) Typ. Operating Current (Amps) Number of Stacks Package Outline3 MG1060-15 9.3 10 70 6 2 M15 1 Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown. Additional frequencies are available; Please contact the factory. 2 Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 µS, duty factor = 1% typ. 3 Polarity: anode is the cap and cathode is the heatsink.

MG1001 – MG1061 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 4 TM ® GUNN Diodes Cathode Heat Sink Copyright  2008 Rev: 2009-01-19 Gunn Diodes (Discrete Frequency: Cathode Heatsink) Typical Characteristics 1.0 -50°C 90°C IBias IThreshold Ratio Power Output (mW) 0.8 0.6 0.4 0.2 300 250 200 150 100 0 1 2 3 2 4 6 8 10 12 VBias VThreshold Ratio IBias Ratio vs. VBias Ratio Bias Voltage (V) Power Output vs. Bias Voltage IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change. Consult factory for the latest information. These devices are ESD sensitive and must be handled using ESD precautions. These products are supplied with a RoHS complaint Gold finish.