MG100Q2YS51A TOSHIBA | Alldatasheet

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TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS 4-965209 3=Ms 4 ~FAST-ON-TAB# 110 © High Input Impedance f— al PBA sls © High Speed : tp=0.3s (Max.) iE bale alsa @lnductive Load S = ; Plo | te fej © Low Saturation Voltage 73 : VCE (sat)=3.6V (Max.) tes o 108 + 0.8 e Enhancement-Mode a9t0 . . sto3 !“3e03 © Includes a Complete Half Bridge in One r . ¢ er ee @ The Electrodes are Isolated from Case. iad os] | 8. EN a EQUIVALENT CIRCUIT | 106 + 0.8 ar El E2 JEDEC - cu E2 TOSHIBA 2-109C4A Weight : 430g G1 E1/C2 G2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual Property or ‘other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/7

MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 Gate-Emitter Voltage VGEs [re fascia] 10/20 _| pc _ o 150/100 Collector Current co 80°O) A | ims | Im | 200 | Collector Power Dissipation Storage Temperature Range . 2500 Screw Torque (Terminal / Mounting) [ — | 3/3 | Nm | ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION | ay. | rye. [ax. [unr] Gate Leakage Current VoE=+20V, Vop=0 | — | — [+500 Collector Cut-Off Current IcES VcR=1200V, VGE=0 [| — | — | 20[ ma | Gate-Emitter Cut-Off Voltage Ig=100mA, VoR=5V [30 [| — | 60] Vv | Collector-Emitter Saturation Vv Ic=100A, Ti=25°C | — | 28] 3.6] Vv Voltage CE (sat) | Van =15V Tj=125C| — | 31] 40] Taput Capacttance Vop=i0V, Vex=0, f=iMie | — [720 | — [ak | Turn-On Delay Time Inductive Load [| — [005 | — | Voo=600v [= [05 =| Switching Ig=100A [= [o2[—] Time Turn-Off Delay Time VaE=+t15V | — | 05] — | a Turn-Off Time (ote D)[ — [ 06 | — | Forward Voltage T= 100A, Vau=0 [= 1s 30) v_| . Ip=100A, VGE=—-10V Reverse Recovery Time ter di/dt=700A/ ys (Note 1) 0.1 0.25) pus : [Transistor Stage | — | — | 0.16), Thermal Resistance Reh (-0) Diode Stage D— P— [0.24] c/w 1997-03-03 2/7

(Note 1) Switching Time and Reverse Recovery Time Test Circuit & Timing Chart VGE ' ' Rg 90% ' ~VGE Ic{]_L Voc I a ty J Rg 1 ¥ 90% NFR 90%

9 Vowtomif 10% 10%if | 110%

td (off)! je td(on)! wt | tt ite tot pone tt TOOT Ay 90% Ter ' toff | ‘ton 1 lr 50% Ipr Ip ter 1997-03-03 3/7

Ic — VCE Ic - VCE 2 ca 10 5 [ann Zoccon 5 Lo TAS ees / se ne) & if | WAT TT = od | | Weer Tore) (Pye pee Poooo oe AES 3 3 DALE DALE 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE Vcf (V) COLLECTOR-EMITTER VOLTAGE Veg (V) = 6 VCE - VGE S16 VCE — VGE = [} [Ty [] COMMON EMITTER = ane COMMON EMITTER 2 1 | | ff Te=25°C 2 || | tf Te=125°C g"CLET TTT T TT gE EET TTT 5 5 ef Tt s TTT BMA BTA | ; K : Rennae BENG [ison |] PT CE ERR e LORE e Lee FeS a LETT | yey g LLL] | lel i | ° % 4 8 12 16 20 ° °F 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) = Vor - Vor v00 Ic - Vor © ETT TF conor: enter [TT le 7 TTT] ee ee an i | 4 | | 8 12 2 1650) i A g CET TTT IIT eee eee | aoe see ba 2 2 8 = 100] BLT e° LETT PTT Ty Ty oe eee oe, e LL) (Yee eS 3 LL eee ec a / Ameo GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) 1997-03-03 4/7

woo Ip - VF = B00 VCE, VGE — QG 6 Toro «+ Te: 2 f ee A ee PLLA) EEE

5 IK § g

Zz 120) y 3 7 < GES? MSGR en rg 8 nonce |) a aeem | tye ee een | e4cueeeeee TY Ae | LAL tty eee 0 1 2 3 4 5 0 200 400 600 800 1000 FORWARD VOLTAGE Vp (V) CHARGE Qg (nC) SWITCHING TIME — Rg SWITCHING LOSS — RqG so a a LT PT 20 PA teeta Co Ba CO ese sehr | | || Eas al Lee gl || Bt tee | | & OZ wom i a 2 oof PAU Ta | g ee | ee | z read |i} |e LINN TTT TT e ateeee |e UT I & Fee a & ERE EE & osteo ost te tt . Loot er Ty Try cos re os CO Li Como TTI fees comoxpurme | | || 0.01 Voc=600V —— 0.01] Yoo =600V — a os | 85 5 10 30 «50 100 300 500 3 5 10 30 «50 100 300 500 GATE RESISTANCE Rg (@) GATE RESISTANCE Rg @) 1997-03-03 5/7

SWITCHING TIME - Ic SWITCHING LOSS - Ic Ca a | 100 ee fp a ee ee : . Py OO _ 0s} SSeS SESS PSe ees | 5 nd q ——— oe Fy a = os | basse aeee g =A re g “SSS Se] E NX 8S Fe Cte o Pw nvovien i A as ee | == War o> .ateeeee e | - ea 5 4 S ea S 3+-y an a a 7s 9 & ‘BY Ez vos} et z me Va Saeeeee eR FT IFT iti ty | | | iS oe 1 === | tecsaor 0.008) Vega t15V ——— Te = 25°C +++ 05F 7] _| Vor=415v = Tote ooogLRO=84@ TT Testeerc TTT | ogh_1 | 1 | Re=910 a “0 20 40 60 80 100 120 “0 20 40 60 80 100 120 COLLECTOR CURRENT Ig (A) COLLECTOR CURRENT Ic (A)

000 Inr, trr — IF 50 Edsw — IF

COMMON CATHODE [JT] COMMON CATHODE +] . di/dt=700A/ ps 30) di/dt=700A/ ps i | ft | ~ Vor=-10V —— Te=25°C Vop=-10v ——— _Te=25°C xg 1| Voo=s00v a ——— 3 Voo=600v ~~~ Te=125°C eS a BF [| 8 FS Ey CCE ELELLLA& LI ef _ &2 300) A Fa a a a a Oe a ee Bz dL | Jest Fara a a a 7 g | | Pde] | Ty ty ty e |C 2 Cece Coco 2 oles TY | E a re es ee oe eo 5 aa 2S nl 8 Tid ge of top ot Boe = [- Be el pf fey be 0.5) Bs LITT tT Ty tt yy Boos a oe Hefei tt SSS SSeS =— PITT PELE Le sL tn on 02 4 60 80 100 120 030496080 100120 FORWARD CURRENT Ip (A) FORWARD CURRENT Ip (A) 1997-03-03 6/7

C - VcE SAFE-OPERATING AREA 30000) 500) ot ot oot oo Fic wax @uvsen » AEE ee) gem meen & 10000) < SI IN é Set eee ee eT Ic MAX. (CONTINUOUS) LN

5000 Ra 100 rer oe RE 50838

° lone So wp 9000 TE COS Co BZ sopDc Saeineaen oe So a tt NTT 8 go} OPERATION |W TTT NINN & sooo et LT TTS 5 NTT Ney SoHE SE ile Ea Sof S88 rennve WAL 1 & 500 EHH EHH“ 5 Te ere. NEETEE NEES g Seat 5 glouaeewesrne ARTE NSE S goo COMMON EMIrrER [TT TTT CT NN Q sfCURVES 3 EX VGE=0V A 3 3|LINEARLY WITH 0 weet Sf iia ONT = 25% Saat TEMPERATURE. ——Soi—seeatn N Soros on ost 10 0100 13-510 20 6-100 500500 1000 F000 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Veg (V) soo REVERSE BIAS SOA j Rthit) — tw ie 8 | nee EPH A 2 a Z os) ooh 2 toe tt tt gs} OTT rove stace | & p= == eS Be HH a 3g a) = i 4 20 2 Pasi | a Fe Ee OLE EEH=AT= TRANSISTOR STAGE if eS TL EEPEEE LEP Ey 23 HES rrr erie e 10 ae e 0.05] [DAI SSS fe a. «4 es | B 0.08 Ly 8 af Hewee =F PP Pe er 4 Za

8 Voewetv CLEP Pry 2

sun | TTT TTT TT CAI EET TTT Tih iL_6 ook L L 0 200° 400° «600-800-1000 12001400 10% 10°? 107 1 10 COLLECTOR-EMITTER VOLTAGE Veg (V) PULSE WIDTH ty (s) SHORT CIRCUIT SOA 3000 [TTT TTT TTT yt ty $ opt {ttf == eee a a a SS Pe 2 rT TTT rrr yy ry ye eee

100 SSS

8% verse ree [| TI | | LT 109 200 400 600 800 1000 1200 1400 COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-03-03 7/7