MG100Q1JS40 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm CHOPPER APPLICATIONS. 3-M5 2-95.640.3 . 3 7 mle © High Input Impedance Bole 8 [We lr E| 3 © High Speed : tp=0.58 (Max.) . Ribble se BE ° pexos = rr BL frr= 0.548 (Max.) | 23203 | 2-FAST-ON-TAB #110 © Low Saturation Voltage | _tozs208 : VCE (sat) =4.0V (Max.) *eaayengeass 22408 7.441 @ Enhancement-Mode |_| a Jeet 1Ltt s « © The Electrodes are Isolated from Case. oa 2 Aik EQUIVALENT CIRCUIT —————e ae a El [tos+08 |[psaaos] C1 E2 JEDEC = Gi E1/C2 TOSHIBA 2-108A4A (B1) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VcEs 1200 Gate-Emitter Voltage Vors Collector Current c A Forward Current E A [ims [im | 200 | Collector Power Dissipation P 670 w (To=25°C) peo | om | Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 2500 (AC 1 min.) Screw Torque (Terminal/Mounting) [| — [3/3 | Nm | 2610016002 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Speiaes ranger tl Yon the a vecerk pods species als late Loop in mind te precast and cnaions Lat tr nthe © The information contained herein is presented only as a guide for the applications of our products. No. responsibility is assumed by TOSHIBA CORPORATION for any Inesingersents of ristectsal Bropernyor exnsy rants EF tse inva parties ben tay Fesui hom Ns use. We Teanse is grates by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Van=+20v, von=0 [| — | — | +10] xa | Collector Cut-off Current Ions _[Von=1200V, Vgn=0 | — | — | 10[ ma | Ig=ImA, Vgn=0 [ 1200 | — | — | v | Gate-Fmitter Cut-off Voltage Vor=5V,Io=100mA | 30] — | 60] v | Collector-Emitter Saturation _ _ . . VcE=10V, VGE=0 Input Capacitance Cies | CBR 12000 pF | = | sf 06 | vtehine ‘Ti wv otmelk 7s [= [ oal os | Switching Time us soov | — | os] 15 | Forward Voltage Ip=100A, Von=0 | — | 20] so] v | . Ip=100A, VgE=—10V Reverse Recovery Time ter di/dt=200A/ ps 0.25 US Thermal Ring | = | = [019 Joo wy Resistance “ee P= | — | os] 1997-03-03 2/5

Ic - VCE . VCE - VGE 200; = 12) TT [alii | [rowow rane = 11.111 dees < || | [pee S EMITTER scoops) = LL es i | Ps 2 | E wtf hae | g eet (eee eee eee cee oe Zane as YW ne 3 WES 8 vot tt teat 3 Pee LILI

4 ATi tT TT TT} 8 4

COLLECTOR-EMITTER VOLTAGE VcgE (V) GATE-EMITTER VOLTAGE VgE (V) ~ VCE - VGE ~ VCE - VGE eS 12 S12 e Lit] TT | | one e Litt] | | eae

2 EMITTER 2 EMITTER

ef | yl ett UY | ee 2 4 Z 4 ee eee eee > Le AN Plt Nee | EB TL Ne a4 Rees aS CE] : = E Sh

2 Lf] | hee Se Lt AES

° % 4 8 12 16 20 ° % 4 8 12 16 20 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) Ic - Van _ Vcr, VGE — QG

200 Es 1000 7 20

= Vce=5V WV S / ce 3 i | | * eo w 8 e“COTTT FT) EEA; P Sof | TET TT TTT, ¢ eo tt ta TTT ETT VIZ TET &§ oon Pe ee 2 3 ty | ae, 8 g oe ieee 2 HERR} common muurnee | E 3 8 i $ oath / |_| NS 400! 2 6a & Se & eT pam) 88 hog WY 3 AN Te=25°C é ; WY) 2 Wo ; 0 4 8 12 16 20 ° 0 200 400 600 800 1000 1200 GATE-EMITTER VOLTAGE Vgg (V) CHARGE Qg (nC) 1997-03-03 3/5

SWITCHING TIME - Ic SWITCHING TIME — RG

5 CTT 10) Ss SS

of 1 common exerren 4] veossoov, ig=t008 EEE HA | | [| | | |vcc=600v, vor=+t15v {legp=sisy, t=2c Saas S [| | | | [essa te28e ES a g SSS SSS 2 (UI TU ae FI _—— Bo UE = ee Sao s of + ++ tt tt | eee a 2 ysl a 2 os HAS Oe a 5 oo ti a 5 ' 5S ——— Bee lee | LET WL ee == SSS fp oost_— Sc 0 20 40 60 80 100 05 1 3 5 #10 30 50 100 300 COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg «) » Ip - Ve 2 wo ter, ler = IP 7 1S w ew ti ater) 6 f ZL e ET et Ty bs fp ‘Te=125°C 80 5 ool f | | ft 8g of et] | ifm Tt ge “EL PEt ee 2 f Eta | SSS Egg See 3 | Lf [ {| | 2 oF ft te Pit 2 , |. 7/7 i i tt | B21 commos carove re a an YZ VgE=0V ze VGE=-10V, Te=25°C ol a S201 0 1 2 3 4 = 0 20 40 60 80 100 120 FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip (A) Cc - VCE Rth(t) — tw 50000 re SS a fg ting PENS & ome HEE oT pe no ETN Bo og S Ae ee g OE Sai Coes $2 ost HH Z 800 FE Ba ae aa [Loe ig tliat a Fe oak eee reanisron srace | § 0) commow warren |_[ [UT LN Boos SH tte 3 / S555 —— 4 2 oos|— 50| VGE=0V SSS 3 Caan |e Ee ott 2 oof TT we LTT TTT oes = ee ‘05003 1 Fy 10 30 ~—«:100 10> 107 107) 1 10 COLLECTOR-EMITTER VOLTAGE Veg (V) PULSE WIDTH ty (s) 1997-03-03 4/5

SAFE OPERATING AREA REVERSE BIAS SOA swofic max cose = HA 300 , Memento «TET 2 = wh LL 5 flex. connnvous \\ | AEFf2000» x 5 === === === SS 9 (0S ES ESS] AS oe 3 sof EEA as NE 3 ott Tt | [| TTI YT NE BS SSSSSSSSSS== 2 ” X N 2 Se 3 3 SINGLE NET INGA 1 a ee ee oe i | e=250 NG eat 4 3 5| CURVES MUST BE AASrernon 3 1 | DERATED may NI 2 oosf TeRec | Fe 8 3) LINEARLY WITH g = 8 henenee ie HN Sos} Von=iev a seswrenarone, | Ui/MT TT ill [| vermeTTETT] 1710 30 100-500-1000 3000 °19 300400600 8001000" 1200-1400 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-03-03 5/5