MG100J1BS11 TOSHIBA | Alldatasheet

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TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. sotos [| | 3-M4_— a, = ——- oe © High Input Impednace fe “19 =] 5B E ¢ + H) © High Speed : tp=1.0/s(Max.) (I¢=100A) oT Ver 1 mg: igh Spi tp= 1.0/4 C z q eH PB at at 8 Low Saturation Voltage a1) 1 FS 8 32.6+0.4, 3] 3 : VCR(sat) =2-7V (Max.) (Ig = 100A) 43303 e@ Enhancement-Mode — 346404. © The Electrodes are Isolated from Case. A. Ca 1, Ey EQUIVALENT CIRCUIT F Cc a Go JEDEC = TOSHIBA 2-33F1A Weight : 86g MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Collector-Emitter Voltage Vers | 600 |v Gate- Emitter Voltage Vors [ec | tet Collector Current £ A Collector Power Dissipation (Te=25°0) Junction Temperature Storage Temperature Range —40~125 Isolation Voltage 2500(AC 1 Minute) Screw Torque(Terminal/Mounting) [| — [2/3 | Nm | 2610016402 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In. developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the. precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any Infringements of intellectual propertyor other rights of the third parties fwnich may resuit from Its use. No lense is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-03-03 1/4

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current IgES Vor=+20V, VoR=0 a +500 Collector Cut-off Current Von=600V, Van=0 | = | = [10] ma | Gate-Emitter Cut-off Voltage Vor=5V, Ig=100mA | 30| — | eo] v | Collector-Emitter I¢=100A, Vgp=15V a) ov i . VoE=10V, VaR=0, Input Capacitance Cies pac 8200 pF P= [roa aa 240 S Switching Time 0 4Lp us 300V Soe Thermal Resistance [Rng [Oo = = | = J ot fr] 1997-03-03 2/4

“Ps | “CLT 2 api 15 COMMON EMITTER 2 COMMON 5 a Ae | ee e J. | Ty | ame © UL Watt eT E ELLE an J Wo, ae eee ae tT Ty e J pee | ee eeen lito BLIP | | [ver | | a LT | eee (4 | [eres TTT 0 2 4 6 8 10 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VcR(V) GATE-EMITTER VOLTAGE VgE (V) VCE - VGE VCE - VGE 16) 16 [TTT J consos ETT TF como || UE | ame et | UE, anne a 12 Te=25°C a 12] Te=125°C ELT ett ee fT TI TTT or | ee TT TTI TT eT IPP TT E Pe TL | 5 Pe TLR | ie] 4 XI 4] Xt e [I Wee SOL LL fees LL Pees TEE GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V)

200 Ic - VGE VcE,VGE - Qa

— TTT TZ consis . ott, 2 wot LL faa ame SL fee AY Pf LOTT) ALAA oe Be bopper LAAN = Ew j er) oo . e Li TAT B UAL EL TT L TA Tt JSS °o ra 8 12 1620 0 100200 ~~300°-400~~—~=BOD GATE-EMITTER VOLTAGE Vgg (V) CHARGE Qg (nC) 1997-03-03 3/4

— oo a a | a SS | H 2 oti} pier tl 2 os eet ze” | | fem LT re 2 <i 3 CF Commo examen Et ra COMMON EMITTER = 03 peer Veo=300V E E zai

2 CLT | ye 2 ok Fil | Vou=+15V

° oar VGe= #18V “ES SS ic=t0a ESE wz cof EEE! Se ee ee ost 0.05 20 40 60 80 100 1 3 10 30 100 300 COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg (9) C - VCE Rth(t) — tw 80000) 10 Saag Coon o_o [awe Sa oa A st © 3000 : SSS aaa Corn OT ee ee ee ec eee \\ Pp SE eS eS 2 sooo lL TTI LTT | UT fos] eg g 10) AE SSE g P il 3 ® Ht ii 2 ESS aaa é 0 UBSSCCoTIPSSC HT : SSS SS volte UES oS SLE: ESS Feat LUE LUM CTF COLLECTOR-EMITTER VOLTAGE Veg (V) PULSE WIDTH ty (s) REVERSE BIAS SOA sor epeeiniasess a 2 mtisecereee t a CeCee eee eo ee wei SINT y BSS SS === aS a Ft —— SS NSH sop $F A sob orereanos ttt tte Ni § oe I === = 2) SS: \\ Lise AL BERS SSS ESS ESS S 10) NONREPETITIVE Se § HAA g purse tesse EM Bo] nswe LELEEE NE e CREASE IN tN 03) Reamer eseeearome TINT TTI i CEEEE EEC 05 1 3 10 30 100 300, 1000 0 100 200 300 400 500 600 700 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-03-03 4/4