MG100G2DL1 TOSHIBA | Alldatasheet

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TECHNICAL DATA MGlooOG2CcLI MG1OOG2DL1 Unit in mm Pr 5 pyetoteleuatcts a2 . 5 . 2 E702 some BL EI/K(C2) B2: NC 68 35 n fo fic ©| eR (aL CN a af of LS cl Ez . 90 33. - g : g . Weight : 205g Unit in mm ROMERO i Ucltellaltetal Ee a eT ol Ee 8 40 fxg e ps 16 ' BL Ba Te Sql be | [sso perms Weight : 430g | TOSHIBA CORPORATION i GTIA2A | — 266 -

"En mm SEMICONDUCTOR we1oocis44 y iba . . MG1lOOG2CLL ; TECHNICAL DATA H ; MG100G2DL1 ! MAXIMUM RATINGS (Tax25°c) i Collector-Base Voltage | vouo | oo Collector-Enitter Voltage | veeo [oo | ; Collector-Enitter Sustaining Voltage | Vcro(sus) | 450 S| = | [pnitter-Base Voltage | veo [oO 6 tv a : [seorege Tenperature Range | teig| so =15 | “o] Screw Torque (Terminal /Mounting) [| - | 20/30 [ ke-em | : ELECTRICAL CHARACTERISTICS (Ta=25°c) : [—__ciunacrenssrie | smmot_[ san commmnion [umn [ Wr. [mae | OT ; | Gstiecor cut-ott current |e [Vereoor, reo | - | - [20] mr] enseeer Gutmoft corvent | Yeo | Vesr6v, 16-0 | - | = [200 [an] i Collector-Emitter } sees ee een eft collector-Baitter y, Saturation Voltage cE(sat) Tc#100A, Ip=24 Base-Emitter Emitter-Collector Voltage Tg=100A, Ip0 [- | - [vel vq : “1 A, Vepe3V t Reverse Recovery Time c-100) EBS) i * Voc=300V,di/dt=100A/ss i oe oe ae cam] - | - [20 | sou i . Ipy Be . Switching Tine porte ssn | ate | Wa \\ [-[- [| ! Voo=300v j Fall Time TprmIpgsea * ' | DUTY oroLE=as% . i unetton £9 Case) ™ [ptt = | TOSHIBA CORPORATION GTIA2A | : — 267 —

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Z & eel ===. | Sse ===: aE EEE EES one , SSS oO 40 80 420 160 200 24 BO ag as 1 & 10 x» 100 ' . COLLECTOR CURRENT Ig (A) COLLECTOR CURRENT Ig (A) ; TOSHIBA CORPORATION GTIA2A i — 268 —

| BI SEMICONDUCTOR worooersus eee TECHNICAL DATA - Neieecannn SWITCHING TIME — Ig “Fe = Teco ‘ Ser ON EMITTER °| Coo FREEEEH cone = BeSaoaoeas=> Zese Life [| , REESE EER SesSss==s-=s=== PT yy g eee === a CoEEEE-E AEE AREER EERE HH / [ | g ,.oCPreerr HH B OEEERERS eee] og LE ph || | B HERRERA LL Ee LL ! i meee Coeeer a LUTTE HS FE : EERE EES SSeS “CAEL ee ESE REE LEE TE oa ae REA REVERSE BIAS SOA SAFE OPERATING A 0, col re ian oom = HEE auaeeeeeE od [3o wax. ceunsen) «HHT -+ TING I “EEE it eae EN EN * NED NGE RY 2 fh 3 sofcdamimsie ee SNe CECE CCE rw 2 ° soft Wis Ma FERRE CTL, AUST CEE Boo See! 2 LEE Fae os «WES = ae ieee \\aaty Sn s =CCEEEE oI | 5 faecal ; FEC : - rit cof ames esa amar NS EERE itt IN TH CL oe eS “a ATER voLTAe ey) COLLECTOR-EMITTER VOLTAGE Vog OOLLECTOR-EMITTER VOLTAGE Vop ; ee : TOSHIBA CORPORATIONS GTIA2A ~269-

| MG1OOGIJL1 SEMICONDUCTOR uerooe2en: TECHNICAL DATA MG100G2DL1 ; , a (SES eos Bi He ded bala it : EE Rie —t 2 : m, i ea Uh dpe Eis ‘DIODE . nee ae oe me A ie : TRANSISTOR TOSHIBA CORPORATION GTIAZA CO | — 270 -