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Technical content

Features

Applications

  • High short circuit capability, self limiting short circuit current
  • VCE(sat) with positive temperature coefficient
  • Fast switching and short tail current
  • Free wheeling diodes with fast and soft reverse recovery
  • Low switching losses
  • High frequency switching application
  • Medical applications
  • Motion/servo control supplies
  • UPS systems Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit IGBT VCES Collector - Emitter Voltage TJ=25°C 600 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 700 A TC=50°C 600 A ICM Repetitive Peak Collector Current tp=1ms 1200 A Ptot Power Dissipation Per IGBT 1500 W Diode VRRM Repetitive Reverse Voltage TJ=25°C 600 V IF(AV) Average Forward Current TC=25°C 700 A TC=50°C 600 A IFRM Repetitive Peak Forward Current tp=1ms 1200 A I2t TJ =125°C, t=10ms, VR=0V 17000 A2s Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit TJ max Max. Junction Temperature 175 °C TJ op Operating Temperature -40 150 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage AC, t=1min 3000 V CTI Comparative Tracking Index 250 Torque Module-to-Sink Recommended (M5) 2.5 5 N·m Torque Module Electrodes Recommended (M6) 3 5 N·m Weight 350 g MG06600WB-BN4MM

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 MG06600WB-BN4MM 600V 600A IGBT Module Symbol Parameters Test Conditions Min Typ Max Unit IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=9.6mA 4.9 5.8 6.5 V VCE(sat) Collector - Emitter IC=600A, VGE=15V , TJ=25°C 1 .45 V Saturation Voltage IC=600A, VGE=15V , TJ=125°C 1. 6 V IICES Collector Leakage Current VCE=600V , VGE=0V , TJ=25°C 1 mA VCE=600V , VGE=0V , TJ=125°C 5 mA IGES Gate Leakage Current VCE=0V , VGE=±15V , TJ=125°C -400 400 nA RGint Integrated Gate Resistor 0.68 Ω Qge Gate Charge VCE=300V , IC=600A , VGE=±15V 6.5 μC Cies Input Capacitance VCE=25V , VGE=0V , f =1MHz 39 nF Cres Reverse Transfer Capacitance 1. 15 nF td(on) Turn - on Delay Time VCC=300V IC=600A RG =2.4Ω VGE=±15V Inductive Load TJ=25°C 100 ns TJ=125°C 110 ns tr Rise Time TJ=25°C 90 ns TJ=125°C 95 ns td(off) Turn - off Delay Time TJ=25°C 670 ns TJ=125°C 710 ns tf Fall Time TJ=25°C 70 ns TJ=125°C 75 ns Eon Turn - on Energy TJ=25°C 8.9 mJ TJ=125°C 9.9 mJ Eoff Turn - off Energy TJ=25°C 21 .5 mJ TJ=125°C 25 mJ ISC Short Circuit Current tpsc≤6μS , VGE=15V; TJ=125°C , VCC=360V 3000 A RthJC Junction-to-Case Thermal Resistance (Per IGBT) 0.10 K/W Diode VF Forward Voltage IF=600A, VGE=0V , TJ =25°C 1 .55 V IF=600A, VGE=0V , TJ =125°C 1. 5 V tRR Reverse Recovery Time IF=600A, VR=300V diF/dt=-6000A/µs TJ=125°C 400 ns IRRM Max. Reverse Recovery Current 300 A Erec Reverse Recovery Energy 9.3 mJ RthJCD Junction-to-Case Thermal Resistance (Per Diode) 0.16 K/W Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) NTC Characteristics (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit R25 Resistance Tc=25°C 5 KΩ B25/50 3375 K

©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 100 MG06600WB-BN4MM 600V 600A IGBT Module Part Numbering System Part Marking System PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT CIRCUIT TYPE WAFER TYPE PACKAGE TYPE MG06600 WB - B N4 MM VOLTAGE RATING CURRENT RATING ASSEMBLY SITE 06: 600V 600: 600A 2x(IGBT+FWD) LOT NUMBER Space reserved for QR code MG06600WB-BN4MM The foot pins are in gold / nickel coating Dimensions-Package WB Packing Options Part Number Marking Weight Packing Mode M.O.Q MG06600WB-BN4MM MG06600WB-BN4MM 350g Bulk Pack 60