MG06200S-BN4MM LITTELFUSE | Alldatasheet

Document overview

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Technical content

Features

Applications

  • High short circuit capability, self limiting short circuit current
  • V CE(sat) with positive temperature coefficient
  • Fast switching and short tail current
  • Free wheeling diodes with fast and soft reverse recovery
  • Low switching losses Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit IGBT VCES Collector - Emitter Voltage TJ=25°C 600 V VGES Gate - Emitter Voltage ±20 V IC DC Collector Current TC=25°C 300 A TC=60°C 200 A ICM Repetitive Peak Collector Current tp=1ms 400 A Ptot Power Dissipation Per IGBT 600 W Diode V RRM Repetitive Reverse Voltage TJ=25°C 600 V IF(AV) Average Forward Current TC=25°C 300 A TC=60°C 200 A IFRM Repetitive Peak Forward Current tp=1ms 400 A I2t TJ =125°C, t=10ms, VR=0V 3500 A2s Module Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit TJ max Max. Junction Temperature 175 °C TJ op Operating Temperature -40 150 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage AC, t=1min 3000 V CTI Comparative Tracking Index 350 Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M5) 2.5 5 N·m Weight 160 g
  • High frequency switching application
  • Medical applications
  • Motion/servo control
  • UPS systems Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ®RoHS Agency Approvals AGENCY AGENCY FILE NUMBER E71639

©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 141 MG06200S-BN4MM 600V 200A IGBT Module Symbol Parameters Test Conditions Min Typ Max Unit IGBT VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=3.2mA 4.9 5.8 6.5 V VCE(sat) Collector - Emitter Saturation Voltage IC=200A, VGE=15V , TJ=25°C 1 .45 V IC=200A, VGE=15V , TJ=125°C 1. 6 V ICES Collector Leakage Current VCE=600V , VGE=0V , TJ=25°C 1 mA VCE=600V , VGE=0V , TJ=125°C 5 mA IGES Gate Leakage Current VCE=0V ,VGE=±15V , TJ=125°C -400 400 nA RGint Integrated Gate Resistor 2 Ω Qge Gate Charge VCC=300V , IC=200A , VGE=±15V 2.15 μC Cies Input Capacitance VCE=25V , VGE=0V , f =1MHz 13 nF Cres Reverse Transfer Capacitance 0.38 nF td(on) Turn - on Delay Time VCC=300V IC=200A RG =2.0Ω VGE=±15V Inductive Load TJ =25°C 150 ns TJ =125°C 160 ns tr Rise Time TJ =25°C 30 ns TJ =125°C 40 ns td(off) Turn - off Delay Time TJ =25°C 340 ns TJ =125°C 370 ns tf Fall Time TJ =25°C 60 ns TJ =125°C 70 ns Eon Turn - on Energy TJ =25°C 1 mJ TJ =125°C 1 .55 mJ Eoff Turn - off Energy TJ =25°C 5.65 mJ TJ =125°C 6.9 mJ ISC Short Circuit Current tpsc≤6μS , VGE=15V; TJ=125°C,VCC=360V 1000 A RthJC Junction-to-Case Thermal Resistance (Per IGBT) 0.25 K/W Diode VF Forward Voltage IF=200A , VGE=0V , TJ =25°C 1 .55 V IF=200A , VGE=0V , TJ =125°C 1. 5 V IRRM Max. Reverse Recovery Current IF=200A , VR=300V diF/dt=-5700A/μs TJ =125°C 230 A Qrr Reverse Recovery Charge 17 μC Erec Reverse Recovery Energy 5.2 mJ RthJCD Junction-to-Case Thermal Resistance (Per Diode) 0.45 K/W Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)

©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 142 MG06200S-BN4MM 600V 200A IGBT Module Figure 1: T ypical Output Characteristics IC (A) VCE˄V˅ TJ =125°C TJ =25°C 400 320 240 160 VGE =15V Figure 2: T ypical Output characteristics VGE˄V˅ IC (A) TJ =125°C TJ =25°C VCE =20V 1110 9 7 6 5 8 400 320 240 160 Figure 3: T ypical T ransfer characteristics R G ˄Ω ˅ 005 10 25 3 0 Eon Eoff (mJ ) Eon Eoff VCC=300V IC=200A VGE=±15V TJ =125°C 15 2 0 Figure 4: Switching Energy vs. Gate Resistor 0 100 IC˄A˅ VCC=300V RG=2.0Ω VGE=±15V TJ =125°C 400300 200 Eoff Eon

16 Eon Eoff (mJ)

Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area VCE˄V˅ 100 200 300 400 500 01 00 200 3004 00 500 600 700 RG=2.0Ω VGE=±15V TJ=125°C IC (A) VCE˄V˅ IC (A) TJ =125°C 2.04 .5 5.00 GEV =11V GEV = 9V GEV =13V GEV =15V GEV =17V GEV =19V 400 320 240 160

©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:05/19/15 144 MG06200S-BN4MM 600V 200A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q MG06200S-BN4MM MG06200S-BN4MM 160g Bulk Pack 100 Part Numbering System Part Marking System PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT CIRCUIT TYPE WAFER TYPE PACKAGE TYPE MG06200 S - BN4 MM VOLTAGE RATING CURRENT RATING ASSEMBLY SITE 06: 600V 200: 200A 2x(IGBT+FWD) Dimensions-Package S MG06200S-BN4MM LOT NUMBER Space reserved for QR code Circuit Diagram